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Logo: Institut für Materialien und Bauelemente der Elektronik
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Logo: Institut für Materialien und Bauelemente der Elektronik
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Publikationen von Prof. Dr. sc. nat. H. Jörg Osten

Journal

2020

H. Genath, J. Schmidt, H. J. Osten (2020): Analysis of thin germanium-rich SiGe layers on Si(111) substrates grown by carbon-mediated epitaxy, Journal of Crystal Growth 535 (2020) 125569
DOI: 10.1016/j.jcrysgro.2020.125569

2019

A. Fissel, A. R. Chaudhuri, J. Krügener, H. J. Osten (2019): Corrigendum to “Influence of (7×7)–“1×1” phase transition on step-free area formation inmolecular beam epitaxial growth of Si on Si(111)”, Journal of Crystal Growth 524 (2019) 125155
DOI: 10.1016/j.jcrysgro.2019.125155

G. Wetzel, J. Krügener, R. Peibst, A. Dietrich, B. Nacke, H. J. Osten (2019): Simulation of solar cell performance based on in the field measured ambience parameters, AIP Conference Proceedings 2147 (2019) 020020
DOI: 10.1063/1.5123825

L. M. Montañez, I. Strauß, J. Caro, H. J. Osten (2019): Impact of border traps in ultrathin metal-organic framework Cu3(BTC)2 based capacitors, Microporous and Mesoporous Materials 277 (2019) 136
DOI: 10.1016/j.micromeso.2018.10.029

P. Gribisch, J. Schmidt, H.-J. Osten, A. Fissel (2019): Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001), Acta Crystallographica Section B B75 (2019) 59
DOI: 10.1107/S2052520618017869

R. S. Pokharia, K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2019): Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy, Proc. SPIE 10914, Optical Components and Materials XVI, 1091417
DOI: 10.1117/12.2509720

R. Sarkar, S. Bhunia, D. Nag, B. C. Barik, K. Das Gupta, D. Saha, S. Ganguly, A. Laha, J. Lemettinen, C. Kauppinen, I. Kim, S. Suihkonen, P. Gribisch, H.-J. Osten (2019): Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application, Applied Physics Letter 115 (2019) 063502
DOI: 10.1063/1.5109861

2018

J. Schmidt, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001), Semiconductor Science and Technology 33 (2018) 114002
DOI: 10.1088/1361-6641/aadffc

K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy, Journal of Physics D: Applied Physics 51 (2018) 32LT01
DOI: 10.1088/1361-6463/aad176

K. R. Khiangte, J. S. Rathore, S. Das, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures, Journal of Applied Physics 124 (2018) 065704
DOI: 10.1063/1.5020026

L. M. Montanez, K. Müller, L. Heinke, H. J. Osten (2018): Integration of thin film of metal-organic frameworks in metal-insulator-semiconductor capacitor structures, Microporous and Mesoporous Materials 265 (2018) 185
DOI: 10.1016/j.micromeso.2018.02.018

L. Montañez, J. A. Tofflinger, R. Grieseler, P. Fischer, A. Ben-Or, J. A. Guerra, R. Weingartner. H. J. Osten, A. Kribus (2018): Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions, materials today: Proceedings 5 (2018) 14765
DOI: 10.1016/j.matpr.2018.03.066

Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H.J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy, Semiconductor Science and Technology 33 (2018) 104006
DOI: 10.1088/1361-6641/aade69

2017

A. R. Chaudhuri, A. Fissel, H. J. Osten (2017): Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation, Journal of Materials Research 32 (2017) 699
DOI: 10.1557/jmr.2017.22

J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H.-J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, Solar Energy Materials & Solar Cells 173 (2017) 85
DOI: 10.1016/j.solmat.2017.05.055

M. Moellers, C. Margenfeld, T. F. Wietler, H. J. Osten (2017): Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates, Journal of Crystal Growth 480 (2017) 141
DOI: 10.1016/j.jcrysgro.2017.10.019

2016

A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T. F. Wietler, H. J. Osten (2016): Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, Journal of Applied Physics 120 (2016) 144103
DOI: 10.1063/1.4964431

A. K. Katiyar, A. Grimm, R. Bar, J. Schmidt, T. F. Wietler, H. J. Osten and S. K. Ray (2016): Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films, Nanotechnology 27 (2016) 435204
DOI: 10.1088/0957-4484/27/43/435204

F. Kiefer, J. Krügener, F. Heinemeyer, H.J. Osten, R. Brendel, R. Peibst (2016): Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination, IEEE Journal of Photovoltaics 6 (2016) 1175
DOI: 10.1109/JPHOTOV.2016.2591318

F. Kiefer, J. Krügener, F. Heinemeyer, M. Jestremski, H. J. Osten, R. Brendel, R. Peibst (2016): Bifacial, Fully Screen-Printed n-PERT Solar Cells With BF2 and B Implanted Emitters, Solar Energy Materials & Solar Cells 157 (2016) 326
DOI: 10.1016/j.solmat.2016.05.028

H. J. Osten (2016): Epitaxial Oxides on Silicon for CMOS and Beyond, ECS Transactions 75 (2016) 109
DOI: 11.1149/07513.0109ecst

K. Ghosh, S. Das, A. Fissel, H.J. Osten, A. Laha (2016): Long-Term Stability of Epitaxial (Nd₁₋ₓGdₓ)₂O₃ Thin Films Grown on Si(001) for Future CMOS Devices, IEEE Transactions on Electron Devices 63 (2016) 2852
DOI: 10.1109/TED.2016.2566681

P. Shekhter, D. Schwendt, Y. Amouyal, T. F. Wietler, H. J. Osten, M. Eizenberg (2016): Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3, Journal of Applied Physics 120 (2016) 014101
DOI: 10.1063/1.4958301

2015

A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2015): Influence of "1x1"- (7x7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111), Journal of Crystal Growth 425 (2015) 154
DOI: 10.1016/j.jcrysgro.2015.02.041

A. Fissel, A. R. Chaudhuri, J. Krügener, P. Gribisch, H.-J. Osten (2015): Impact of surface phase coexistence on the development of step-free areas on Si(111), Frontiers of Materials Science 9 (2015) 141
DOI: 10.1007/s11706-015-0282-z

A. R. Chaudhuri, A. Fissel, and H.-J. Osten (2015): Erratum:“Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si (100)”[Appl. Phys. Lett. 104 (2014) 012906], Applied Physics Letters 106 (2015) 149903
DOI: 10.1063/1.4917251

A. R. Chaudhuri, H. J. Osten, and A. Fissel (2015): Impact of boron on the step-free area formation on Si(111) mesa structures, Journal of Applied Physics 118 (2015) 245308
DOI: 10.1063/1.4939160

J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, and H. J. Osten (2015): Ion implantation of boric molecules for silicon solar cells, Solar Energy Materials & Solar Cells 142 (2015) 12
DOI: 10.1016/j.solmat.2015.05.024

J. Krügener, R. Peibst, F. A. Wolf, E. Bugiel, T. Ohrdes, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, H.-J. Osten (2015): Electrical and Structural Analysis of Crystal Defects after High-Temperature Rapid Thermal Annealing of highly Boron Ion-Implanted Emitters, IEEE Journal of Photovoltaics 5 (2015) 166
DOI: 10.1109/JPHOTOV.2014.2365468

2014

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100), Applied Physics Letters 104 (2014) 012906
DOI: 10.1063/1.4861470

A. R. Chauhuri, A. Fissel, H.-J. Osten (2014): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si, physica status solidi C 11 (2014) 1412
DOI: 10.1002/pssc.201300596

F. Kiefer, R. Peibst, T. Ohrdes, T. Dullweber, J. Krügener, H.-J. Osten, C. Schöllhorn, A. Grohe, R. Brendel (2014): Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells, physica status solidi A 212 (2014) 291
DOI: 10.1002/pssa.201431118

H.-J. Osten, A. Fissel (2014): Kristallstrukturengineering, Unimagazin der Leibniz Universität Hannover 01/02 (2014) 50

H.-J. Osten, D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon, ECS Transactions 61 (2014) 3
DOI: 10.1149/06102.0003ecst

J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, H.-J. Osten (2014): Structural analysis of textured silicon surfaces after ion implantation under tilted angle, Semiconductor Science and Technology 29 (2014) 095004
DOI: 10.1088/0268-1242/29/9/095004

P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric, Applied Physics Letters 105 (2014) 262901
DOI: 10.1063/1.4905356

2013

A. Laha, A. Fissel, H.-J. Osten (2013): Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbon, Applied Physics Letters 102 (2013) 202902
DOI: 10.1063/1.4807588

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Investigation of band offsets and dc leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si, Journal of Applied Physics 113 (2013) 184108
DOI: 10.1063/1.4804245

A. R. Chaudhuri, A. Fissel, V. R. Archakam, H.-J. Osten (2013): Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping, Applied Physics Letters 102 (2013) 022904
DOI: 10.1063/1.4775688

D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy, Journal of Crystal Growth 378 (2013) 254
DOI: 10.1016/j.jcrysgro.2012.12.087

H.-J. Osten (2013): Crystalline oxides on silicon, High Permittivity Gate Dielectrics, Ed. Samares Kar, Springers Series in Advanced Microelectronics 43 (2013) 395
ISBN: 978-3-642-36535-5

J. Krügener, H.-J. Osten, A. Fissel (2013): Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7x7)-“1x1” surface phase transistion, Surface Science 618 (2013) 27
DOI: 10.1016/j.susc.2013.08.017

K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2013): Epitaxial Gd2O3 on strained Si1-xGex virtual substrate for next generation complementary metal oxide semiconductor device application, Applied Physics Letters 103 (2013) 153501
DOI: 10.1063/1.4824422

Ke Xu, A. R. Chaudhuri, H. Parala, D. Schwendt, T. de los Arcos, H.-J. Osten, A. Devi (2013): Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: Process optimization, film analysis and electrical properties, Journal of Materials Chemistry C 1 (2013) 3939
DOI: 10.1039/C3TC30401A

S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H.-J. Osten, S. K. Ray (2013): MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device, Nanotechnology 24 (2013) 505709
DOI: 10.1088/0957-4484/24/50/505709

2012

A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy, physica status solidi C 9 (2012) 2050
DOI: 10.1002/pssc.201200139

D. Schwendt, H.-J. Osten, P. Shekhter, M. Eizenberg (2012): Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon, Applied Physics Letters 100 (2012) 232905
DOI: 10.1063/1.4727893

D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Carbon-mediated growth of thin, fully relaxed germanium films on silicon, Applied Physics Letters 100 (2012) 012108
DOI: 10.1063/1.3675450

H.-J. Osten, D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon, ECS Transactions 50 (2012) 41
DOI: 10.1149/05004.0041ecst

K. Xu, R. Ranjith, A. P. Milanov, H. Parala, R. A. Fischer, A. Laha, E. Bugiel, J. Feydt, S. Irsen, T. Toader, C. Bock, D. Rogalla, H.-J. Osten, U. Kunze, A. Devi (2012): Atomic layer deposition of Gd2O3 and Dy2O3: A study on the ALD characteristics, structural and electrical properties, Chemistry of Materials 24 (2012) 651
DOI: 10.1021/cm2020862

2011

A. Fissel, J. Krügener, H.-J. Osten (2011): Towards controlled molecular beam epitaxial growth of artificially layered Si structures, Journal of Crystal Growth 323 (2011) 144
DOI: 10.1016/j.jcrysgro.2010.12.001

A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates, ECS Transactions 41 (2011) 101
DOI: 10.1149/1.3633025

A. Laha, B. Ai, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties, Applied Physics Letters 99 (2011) 152902
DOI: 10.1063/1.3646104

E. Lipp, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H.-J. Osten, M. Eizenberg (2011): Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors, Journal of Applied Physics 109 (2011) 073724
DOI: 10.1063/1.3573036

H.-J. Osten (2011): Auf dem Weg zur Nanoelektronik: Neue kristalline Materialien für Elektroniklösungen auf dem altbekannten Silizium, Unimagazin der Leibniz Universität Hannover 01/02 (2011) 20

J. Krügener, H.-J. Osten, A. Fissel (2011): Ultraviolet photoelectron spectroscopic study of elemental boron adsorption and surface segregation on Si(111), Physical Review B 83 (2011) 205303
DOI: 10.1103/PhysRevB.83.205303

R. Haug, H.-J. Osten, J. Caro, L. Rissing, F. Schulze-Wischeler (2011): Engineering des Unsichtbaren, Unimagazin der Leibniz Universität Hannover 01/02 (2011) 4

Y. Y. Gomeniuk, Y. V. Gomeniuk, A. N. Lazarov, V. S. Lysenko, H.-J. Osten, A. Laha (2011): Interface and bulk properties of high-K gadolinium and neodymium oxides on silicon, Advanced Materials Research 276 (2011) 167
DOI: 10.4028/www.scientific.net/AMR.276.167

2010

A. Fissel, J. Krügener, D. Schwendt, H.J. Osten (2010): Role of boron and (√3x√3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study, physica status solidi A 207 (2010) 245
DOI: 10.1002/pssa.200982433

A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.-J. Osten (2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy, Thin Solid Films 518 (2010) 2546
DOI: 10.1016/j.tsf.2009.09.139

A. Laha, A. Fissel, H.-J. Osten (2010): Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates, Applied Physics Letters 96 (2010) 072903
DOI: 10.1063/1.3318260

A. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H.-J. Osten, H. Parala, R. Fischer, A. Devi (2010): Crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition process, Journal of the American Chemical Society 132 (2010) 36
DOI: 10.1021/ja909102j

H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices, Proceedings of the 4th International Conference on Quantum, Nano and Micro Technologies (2010) 38
DOI: 10.1109/ICQNM.2010.14

J. X. Wang, T. Liu, Z. Wang, E. Bugiel, A. Laha, T. Watahiki, R. Shayduk, W. Braun, A. Fissel, H.-J. Osten (2010): Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si, Materials Letters 64 (2010) 866
DOI: 10.1016/j.matlet.2010.01.045

R. Dargis, A. Fissel, D. Schwendt, J. Krügener, T. Wietler, A. Laha, E. Bugiel, H.-J. Osten (2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxides, Vacuum 85 (2010) 523
DOI: 10.1016/j.vacuum.2010.01.026

R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten, K. Xu, A. P. Milanov, A. Devi (2010): Downscaling of defect-passivated Gd2O3 thin films on p-Si(001) wafers grown by H2O-assisted atomic layer deposition, Semiconductor Science and Technology 25 (2010) 105001
DOI: 10.1088/0268-1242/25/10/105001

2009

A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications, World Journal of Engineering 6 (2009) 245

A. Fissel, J. Krügener, H.-J. Osten (2009): Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction, Surface Science 603 (2009) 477
DOI: 10.1016/j.susc.2008.12.004

A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, H.-J. Osten (2009): Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide, Nanotechnology 20 (2009) 475604
DOI: 10.1088/0957-4484/20/47/475604

A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas’ev, A. Stesmans, A. Fissel, H.-J. Osten (2009): Integration of low dimensional crystalline Si into functional epitaxial oxides, Microelectronics Journal 40 (2009) 633
DOI: 10.1016/j.mejo.2008.06.064

A. Nazarov, V. Lysenko, Y. Y. Gomeniuk, Y. V. Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon, ECS Meeting Abstracts 902 (2009) 2139
DOI: 10.1149/1.3206634

E. Lipp, H.-J. Osten, M. Eizenberg (2009): The thermal stability of Pt/ epitaxial Gd2O3 / Si stacks and its dependence on heat-treatment ambient, Journal of Applied Physics 106 (2009) 113505
DOI: 10.1063/1.3264674

H.-J. Osten, A. Fissel, A. Laha (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics, Proceedings of the XVth International Workshop on the Physics of Semiconductor Devices (IWPSD-2009) 107

H.-J. Osten, A. Laha, A. Fissel (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics, MRS Proceedings 1155: CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications (2009) 97
DOI: 10.1557/PROC-1155-C01-01

J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun, T. M. Liu, H.-J. Osten (2009): Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates: a diffraction study, Semiconductor Science and Technology 24 (2009) 045021
DOI: 10.1088/0268-1242/24/4/045021

J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure, Proceedings of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS) (2009) 431
DOI: 10.1109/NEMS.2009.5068613

M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, D. Tetzlaff, H.-J. Osten (2009): Complementary metal oxide semiconductor integration of epitaxial Gd2O3, Journal of Vacuum Science & Technology B 27 (2009) 258
DOI: 10.1116/1.3054350

R. Dargis, A. Fissel, E. Bugiel, D. Schwendt, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI Applications, Material Science (MEDŽIAGOTYRA) 15 (2009) 11

R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications, e-Journal of Surface Science and Nanotechnology 7 (2009) 405
DOI: 10.1380/ejssnt.2009.405

T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates, Solid-State Electronics 53 (2009) 833
DOI: 10.1016/j.sse.2009.04.027

V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2009): Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3, Applied Physics Letters 95 (2209) 102107
DOI: 10.1063/1.3204019

2008

A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis H.-J. Osten (2008): Silicon in functional epitaxial oxides: A new group of nanostructures, Microelectronics Journal 39 (2008) 512
DOI: 10.1016/j.mejo.2007.11.007

A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
DOI: 10.1109/COMMAD.2008.4802113

A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanasiev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
DOI: 10.1109/COMMAD.2008.4802118

A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2008): Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications, Semiconductor Science and Technology 23 (2008) 085015
DOI: 10.1088/0268-1242/23/8/085015

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications, Microelectronic Engineering 85 (2008) 2350
DOI: 10.1016/j.mee.2008.09.030

A. Laha, E. Bugiel, H.-J. Osten, A. Fissel (2008): Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices, Rare Earths: Research and Applications, Editor: Keith N. Delfrey, Nova Science Publishers (2008) 301
ISBN: 978-1-60456-218-7

A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, H.-J. Osten (2008): Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin film, Applied Physics Letters 93 (2008) 182907
DOI: 10.1063/1.3009206

B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, H.-J. Osten (2008): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy, Solid-State Electronics 52 (2008) 1274
DOI: 10.1016/j.sse.2008.04.005

E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2008): Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces, Applied Physics Letters 93 (2008) 193513
DOI: 10.1063/1.3028071

H.-J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, A. Fissel (2008): Introducing crystalline rare-earth oxides into Si technologies, physica status solidi A 205 (2008) 695
DOI: 10.1002/pssa.200723509

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals, Microelectronic Engineering 85 (2008) 2382
DOI: 10.1016/j.mee.2008.09.002

M. Czernohorsky, D. Tetzlaff, E. Bugiel, R. Dargis, H.-J. Osten, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, H. Kurz (2008): Stability of Crystalline Gd2O3 Thin Films on Silicon during Rapid Thermal Annealing, Semiconductor Science and Technology 23 (2208) 035010
DOI: 10.1088/0268-1242/23/3/035010

Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode, Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008) 1276
DOI: 10.1109/ICSICT.2008.4734784

Q.-Q. Sun, A. Laha, S.-J. Ding, D. W. Zhang, H.-J. Osten, A. Fissel (2008): Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method, Applied Physics Letters 93 (2008) 083509
DOI: 10.1063/1.2976325

Q.-Q. Sun, S.-J. Ding, D. W. Zhang, A. Laha, H.-J. Osten, A. Fissel (2008): Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100), Applied Physics Letters 92 (2008) 152908
DOI: 10.1063/1.2912523

V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel, W. Tian, L. F. Edge, D. G. Schlom (2008): Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancy, Applied Physics Letters 93 (2008) 192105
DOI: 10.1063/1.3003872

2007

A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application, Material Science Forum 556-557 (2007) 655
DOI: 10.4028/www.scientific.net/MSF.556-557.655

A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2007): Epitaxial multi-component rare earth oxide for high-K application, Thin Solid Films 515 (2007) 6512
DOI: 10.1016/j.tsf.2006.11.070

A. Laha, A. Fissel, H.-J. Osten (2007): Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application, Applied Physics Letters 90 (2007) 113508
DOI: 10.1063/1.2713142

A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical properties, Microelectronic Engineering 84 (2007) 2282
DOI: 10.1016/j.mee.2007.04.051

A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-K dielectrics, Microelectronic Engineering 84 (2007) 1968
DOI: 10.1016/j.mee.2007.04.136

E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation, Microscopy and Microanalysis 13 (2007) 304
DOI: 10.1017/S1431927607081524

E. Bugiel, M. Lewerenz, H.-J. Osten (2007): Fabrication of well difined individual dislocation in SiGe as a novel 1-dimensional system, Physica E: Low-dimensional Systems and Nanostructures 37 (2007) 250
DOI: 10.1016/j.physe.2006.07.004

E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal Stability of Pt/ Epitaxial Gd2O3/ Si Stacks, Materials Research Society Symposium Proceedings 996 (2007) H03-08

H.-J. Osten (2007): Kristalline Gate-Isolatoren für zukünftige MOS-Transistoren, Technologie-Informationen 02 (2007)

H.-J. Osten, A. Laha, M. Czernohorsky, R. Dargis, E. Bugiel, A. Fissel (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies, ECS Transactions 11 (2007) 287
DOI: 10.1149/1.2779568

H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures, Journal of Vacuum Science & Technology B 25 (2007) 1039
DOI: 10.1116/1.2720858

H.-J. Osten, D. Kühne, E. Bugiel, A. Fissel (2007): Fabrication of single crystalline insulator/Si/insulator double barrier nanostructures using cooperative vapor-solid-phase epitaxy, Physica E: Low-dimensional Systems and Nanostructures 38 (2007) 6
DOI: 10.1016/j.physe.2006.12.012

H.-J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, A. Fissel (2007): Molecular Beam Epitaxy of Rare-Earth Oxides, In Topics in Applied Physics Volume 106: Rare Earth Oxide Thin Films, Editors M. Fanciulli & G. Scarel, Springer-Verlag Berlin/Heidelberg (2007) 101
DOI: 10.1007/11499893_7
ISBN: 978-3-540-35796-4

H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures, Microelectronic Engineering 84 (2007) 2222
DOI: 10.1016/j.mee.2007.04.092

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2007): Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations, Applied Physics Letters 90 (2007) 252101
DOI: 10.1063/1.2746419

S. Zollner, J. P. Liu, P. Zaumseil, H.-J. Osten, A. A. Demkov (2007): Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1-yCy alloys on Si(001), Semiconductor Science and Technology 22 (2007) S13
DOI: 10.1088/0268-1242/22/1/S04

2006

A. Fissel, D. Kuehne, E. Bugiel, H.-J. Osten (2006): Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructure, MRS Proceedings 928: Current and Future Trends of Functional Oxide Films, Editors: D. Kumar, V. Craciun, M. Alexe, K. K. Singh (2006) 0928-GG03-04
DOI: 10.1557/PROC-0928-GG03-04

A. Fissel, D. Kühne, E. Bugiel, H.-J. Osten (2006): Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single crystalline insulator/Si/insulator nanostructures, Applied Physics Letters 88 (2006) 153105
DOI: 10.1063/1.2192979

A. Fissel, D. Kühne, E. Bugiel, H.-J. Osten (2006): Fabrication of single-crystalline insulator/Si/insulator nanostructures, Journal of Vacuum Science & Technology B 24 (2006) 2041
DOI: 10.1116/1.2213266

A. Fissel, E. Bugiel, C. L. Wang, H.-J. Osten (2006): Formation of twinning-superlattice regions by artificial stacking of Si layers, Journal of Crystal Growth 290 (2006) 392
DOI: 10.1016/j.jcrysgro.2006.02.009

A. Fissel, E. Bugiel, C. R. Wang, H.-J. Osten (2006): Formation of Si twinning-superlattice; First steps towards Si-polytype growth, Materials Science and Engineering: B 134 (2006) 138
DOI: 10.1016/j.mseb.2006.06.046

A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide, Journal of Vacuum Science & Technology B 24 (2006) 2115
DOI: 10.1116/1.2214702

A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application, Superlattices and Microstructures 40 (2006) 551
DOI: 10.1016/j.spmi.2006.07.002

A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, H.-J. Osten (2006): Interface Formation during Molecular beam Epitaxial Growth of Neodymium Oxide on Silicon, Journal of Applied Physics 99 (2006) 074105
DOI: 10.1063/1.2188051

A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Crystalline ternary rare earth oxides with capacitance equivalent thickness below 1 nm for high-K application, Applied Physics Letters 88 (2006) 172107
DOI: 10.1063/1.2198518

A. Laha, E. Bugiel, H.J. Osten, A. Fissel  (2006): Erratum: Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application [Applied Physics Letters 88, 172107 (2006)], Applied Physics Letters 89 (2006) 139901
DOI: 10.1063/1.2354313

A. Laha, H.-J. Osten, A. Fissel (2006): Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application, Applied Physics Letters 89 (2006) 143514
DOI: 10.1063/1.2360209

E. Bugiel, H.-J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2006): TEM Investigations of Epitaxial High-k Dielectrics on Silicon, Springer Proceedings in Physics 107: Microscopy of Semiconducting Materials, Editors A. G. Cullis & J. L. Hutchinson, Springer-Verlag Berlin Heidelberg (2006) 343
DOI: 10.1007/3-540-31915-8_73
ISBN: 978-3-540-31914-6

H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten, H. Kurz (2006): 0.86 nm CET Gate Stacks with Epitaxial Gd2O3 High-K Dielectrics and FUSI NiSi Metal Electrodes, IEEE Electron Device Letters 27 (2006) 814
DOI: 10.1109/LED.2006.882581

H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel (2006): CMOS Integration of Epitaxial Gd2O3 High-K Gate Dielectrics, Solid State Electronics 50 (2006) 979
DOI: 10.1016/j.sse.2006.04.018

H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. K. Efavi, T. Wahlbrink, M. C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics, Proceedings of the 36th European Solid-State Device Research Conference (2006) 150
DOI: 10.1109/ESSDER.2006.307660

H.-J. Osten (2006): Auf dem Weg zur Nanoelektronik, Tele Kommunikation Aktuell 07-12 (2006)

H.-J. Osten, A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky (2006): Interface formation during epitaxial growth of binary metal oxides on silicon, Nano-Electronic Semiconductor Devices: Defects in High-k Gate Dielectric Stacks, Editor E. Gusev, Springer Netherlands (2006) 361
DOI: 10.1007/1-4020-4367-8_29
ISBN: 978-1-4020-4365-9

H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kuehne, A. Fissel (2006): Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon, MRS Proceedings 917: Gate Stack Scaling -- Materials Selection, Role of Interfaces, and Reliability Implications, Editors: R. Jammy, A. Shanware, V. Misra, Y. Tsunashima, S. DeGendt (2006) 0917-E10-04
DOI: 10.1557/PROC-0917-E10-04

M. Czernohorsky, A. Fissel, E. Bugiel, O.Kirfel, H.-J. Osten (2006): Impact of Oxygen Supply during Growth on the Electrical Properties of Crystalline Gd2O3 Thin Films on Si(001), Applied Physics Letters 88 (2006) 152905
DOI: 10.1063/1.2194227

S. Zollner, V. Vartanian, J. P. Liu, P. Zaumseil, H.-J. Osten, A. A. Demkov, B.-Y. Nguyen (2006): Optical properties, elasto-optical effects, and critical-point parameters of biaxially stressed Si1-yCy alloys on Si (001), Proceedings of the 3rd IEEE International SiGe Technology and Device Meeting (ISTDM) (2006) 1
DOI: 10.1109/ISTDM.2006.246604

2005

A. Fissel, C. Wang, E. Bugiel, H.J. Osten (2005): Epitaxial growth of non-cubic silicon, Microelectronics Journal 36 (2005) 506.
DOI: 10.1016/j.mejo.2005.02.064

E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of epitaxial high-k dielectrics on silicon, Springer Proceedings in Physics 107 (2005) 343.
DOI: 10.1007/3-540-31915-8_73

H.-J. Osten (2005): Carbon-doping of SiGe, Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, Editor J. D. Cressler, CRC Press (2005).
ISBN: 1420026585

H.J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel  (2005): MBE growth and properties of epitaxial metal oxides for high-k dielectrics, Journal of Crystal Growth 278 (2005) 18.
DOI: 10.1016/j.jcrysgro.2004.12.051

2004

H.J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky (2004): High-K dielectrics: the example of Pr2O3, Challenges in Process Simulation, (ed.J. Dabrowski and E.R. Weber, Springer Verlag 2004), pp. 259-293
DOI: 10.1007/978-3-662-09432-7_7

2003

A. Fissel, H.J. Osten, E. Bugiel  (2003): Towards understanding epitaxial growth of alternative high-k dielectrics on Si(001): Application to praseodymium oxide, Journal of Vacuum Science and Technology B 21 (2003) 1765.
DOI: 10.1116/1.1589516

H.J. Osten, E. Bugiel, A. Fissel  (2003): Epitaxial Praseodymium Oxide: A New High-K Dielectric, Material Research Society Symposium Proceeding 744 (2003) 15.
DOI: 10.1557/PROC-744-M1.5

H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial praseodymium oxide: a new high-k dielectric, Solid-State Electronics 47 (2003) 2165.
DOI: 10.1016/S0038-1101(03)00190-4

2002

A. Fissel, J. Dabrowski, H.J. Osten  (2002): Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001), Journal of Applied Physics 91 (2002) 8986.
DOI: 10.1063/1.1471943

F. Bechstedt, A. Fissel, U. Grossner, U. Kaiser, H.-C. Weisker, W. Wesch (2002): Towards quantum structures in SiC, Materials Science Forum 389-393 (2002) 737.
DOI: 10.4028/www.scientific.net/MSF.389-393.737

Konferenzbeiträge

2019

J. Krügener, F. Haase, C. Hollemann, H.-J. Osten, R. Peibst (2019): Dopant diffusion through pinholes and continuous oxide layers in n-type polysilicon on oxide (POLO) passivating contacts, 29 th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019

J. Krügener, F. Haase, C. Hollemann, R. Peibst, U. Höhne, J.-D. Kähler, H.-J. Osten (2019): Surface passivation of in situ doped n-type polysilicon on oxide (POLO) layers for silicon solar cells, 29 th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
DOI: 10.13140/RG.2.2.23832.75529

Y. Barnscheidt, H. J. Osten (2019): Carbon-Modified-Germanium-Epitaxy: Filtering Threading Dislocations with Carbon Delta Layers, 2nd Joint ISTDM / ICSI 2019 Conference, Madison, USA, 02. - 06.06.2019

Y. Barnscheidt, J. Schmidt, and H. J. Osten (2019): Grazing Incidence X-Ray Diffraction Analysis of the Periodic Dislocation Network of Ge/Si Heterostructures, 2019 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Monterey, USA, 02. - 04.04.2019
DOI: 10.1149/09301.0067ecst

2018

J. Krügener, F. Haase, R. Peibst, H. J. Osten (invited) (2018): Ion implantation for photovoltaic applications: Review and outlook for silicon solar cells, 12th Ion Implantation and other Applications of Ions and Electrons 2018 (ION2018), Kazimierz Dolny, Poland, 18. - 21.06.2018

J. Krügener, F. Kiefer, R. Peibst, H. J. Osten (2018): Ion implantation of As, B, P, BF and BF2 on planar and alkaline-textured Si(001) surfaces for photovoltaic applications, 22nd International Conference on Ion Implantation Technology (IIT), Würzburg, Germany, 16. - 21.09.2018.
DOI: 10.1109/IIT.2018.8807962

J. Schmidt, D. Tetzlaff, T. F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001), 1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27. - 31.05.2018

K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Molecular beam epitaxy of wafer-scale all-epitaxial GeSn-on-insulator on Si(111) , 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018) Shanghai, China, 02. - 07.09.2018

L. Montañez, I. Strauß, J. Caro, and H. J. Osten (2018): Effect of interface states in thin films of metal organic frameworks obtained by the spray-coating method, XXVIII. International Conference on Organometallic Chemistry (ICOMC2018), Florence, Italy, 15 - 20.07.2018

L. Montañez, I. Strauß, J. Caro, H.J. Osten (2018): Impact of border traps in p-Si/Cu3(BTC)2/Al based MIS capacitors, EMN Meeting on Metal-Organic Frameworks, Barcelona, Spain, 10. - 14.09.2018

P. Gribisch, J. Schmidt, H. J. Osten, A. Fissel  (2018): Influence of Gd2O3 nanostructure formation on crystal structure and surface morphology during growth on Si(001), German MBE Workshop 2018, Freiburg, Germany, 11. - 12.10.2018

Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy, Summer school on defects in semiconductors, Gent, Belgium, 10. - 14.09.2018

Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Ultra-high boron-doped Ge grown by carbon-mediated epitaxy, German MBE Workshop 2018, Freiburg, Germany, 11. - 12.10.2018

2017

J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H. J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, LNQE Nanoday 2017, Hannover, Germany, 28.09.2017

J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H.-J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, 7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03. - 05.04.2017

J. Schmidt, D. Tetzlaff, H. J. Osten (2017): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001), Austrian MBE Workshop 2017, Vienna, Austria, 28.-29.09.2017

L. M. Montanez Huaman, I. Strauß, J. Caro, H. J. Osten (2017): Application of thin Cu3(BTC)2 films in MOS devices, 2nd European Conference on Metal Organic Frameworks and Porous Polymers, Delft, The Netherlands, 29.10. - 01.11.2017

L. Montañez, I. Strauß, J. Caro, H. J. Osten (2017): Electronic properties of Cu3(BTC)2 based MOS capacitors, LNQE Nanoday 2017, Hannover, Germany, 28.09.2017

2016

A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, EMN Meeting on Epitaxy, Budapest, Hungary, 04.-08.09.2016.

A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon, Deutscher MBE-Workshop, Garching, Germany, 13.- 14.10.2016

J. Krügener, F. Kiefer, M. Rienäcker, F. Haase, R. Peibst, H.J. Osten (2016): Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells, 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26. - 30.09.2016.
DOI: 10.1109/IIT.2016.7882886

J. Krügener, F. Kiefer, R. Peibst, H.J. Osten (2016): Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters, 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26. - 30.09.2016.
DOI: 10.1109/IIT.2016.7882856

L. Montañez, J. A. Tofflinger, R. Grieseler, P. Fischer, A. Ben-Or, J. A. Guerra, R. Weingartner. H. J. Osten, A. Kribus (2016): Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions, Extended Defects in Semiconductors (EDS 2016), Les Issambres, France, 25. - 29.09.2016

2015

A. Grimm, A. Fissel, E. Bugiel, H. J. Osten and T. F. Wietler (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED, International Workshop on SPA-LEED, Hannover, Germany, 28.05.-29.05.2015

A. Grimm, A. Fissel, E. Bugiel, H. J. Osten und T. F. Wietler (keynote talk) (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED, Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09. - 11.09.2015

A. Grimm, A. Katiyar, S. K. Ray, H. J. Osten and T. F. Wietler (2015): Room Temperature Photoluminescence of Strained Ge-layers, Engineering of Functional Interfaces (EnFI), Hannover, Germany, 06.07.-07.06.2015

A. R. Chaudhuri, H. J. Osten und A. Fissel (2015): Impact of boron on the step-free area formation during molecular beam epitaxial growth on MESA structures on Si(111), Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09. - 11.09.2015

E. Köhnen, J. Krügener, and H.J. Osten (2015): Surface passivation of ion implanted, Al2O3-passivated p+ emitters, LNQE Nanoday 2015, Hannover, Germany, 01.10.2015

J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, H.-J. Osten (2015): Ion Implantation of Boric Molecules for Silicon Solar Cells, 5th International Conference on Crystalline Silicon Photovoltaics (5th SiliconPV), Konstanz, Germany, 23.03.-25.03.2015

M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates, LNQE Nanoday 2015, Hannover, Germany, 01.10.2015

M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) Substrates, Deutscher MBE-Workshop, Paderborn, Germany, 21.- 22.09.2015

2014

A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2014): Influence of “1×1” – (7×7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111), 18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, Arizona, USA, 07.-12.09.2014

A. Grimm, A. Katiyar, S. K. Ray, H.-J. Osten, T. F. Wietler  (2014): Room Temperature PL of strained Ge-layers, NanoDay 2014, Hannover, Germany, 01.10.2014

A. Laha, A. Fissel, H.-J. Osten (2014): Semiconductor/Oxide Heterostructures on Silicon for Future Complementary Metal Oxide Semiconductor (CMOS) Devices and Beyond, European Workshop on Heterostructure Technology - HETECH 2014, Giessen, Germany, 12.-15.10.2014

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Template assisted growth and dielectric properties of Gd2O3 thin films on Si(100), E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014

F. Kiefer, R. Peibst, T. Ohrdes, J. Krügener, H.-J. Osten, R. Brendel (2014): Emitter Recombination Current Densities of Boron Emitters with Silver/Aluminum Pastes, 40th IEEE Photovoltaic Specialists Conference (PVSC-40), Denver, Colorado, 08.-13.06.2014
DOI: 10.1109/PVSC.2014.6925514

H.-J. Osten (invited), D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon, 225th Electrochemical Society Meeting, Orlando, Florida, USA, 11.-15.05.2014

J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, H.-J. Osten (2014): Structural Investigation of Ion Implantation of Boron on Random Pyramid Textured Si(100) for Photovoltaic Applications, 20th International Conference on Ion Implantation Technology (IIT), Portland, Oregon, USA, 26.06.-04.07.2014
DOI: 10.1109/IIT.2014.6940060

J. Krügener, R. Peibst, E. Bugiel, F. Kiefer, R. Brendel and H.J. Osten (2014): Ion implantation of elemental boron and boric molecules for silicon solar cells, LNQE Nanoday 2014, Hannover, Germany, 01.10.2014

K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2014): Long term reliability study of epitaxial neodymium-gadolinium oxides (NGO) on Si substrates for future group IV based CMOS devices, E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014

K. Katiyar, A. Grimm, A. Rakesh, R. Bar, T. Wietler, H.-J. Osten, S. K. Ray (2014): Optical Emission Characteristics of Compressively Strained Ge Films, Photonics 2014: 12th International Conference on Fiber Optics and Photonics, Kharagpur, India, 13.-16.12.2014

K. Takhar, M. Biswas, D. Tetzlaff, T. Wietler, H.-J. Osten, A. Laha (2014): Monolithic integration of high performance germanium (Ge) based infrared photodetector on silicon and Ge on insulator (GeOI) substrates, E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014

P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the electric behavior of Gd2O3 as high-k gate dielectric, AVS 61th International Symposium and Exhibition, Baltimore, Maryland, USA, 09-14.11.2014

2013

A. Fissel, J. Krügener, H.-J. Osten (2013): Impact of surface phase transformation on the epitaxial growth of Si on Si(111), 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warzaw, Poland, 11.-16.08.2013

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si, E-MRS 2013 Fall Meeting, Warzaw, Poland, 16.-20.09.2013

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Improving Dielectric Properties of Epitaxial Gd2O3 Thin Films on Si by Dopant Incorporation, 30th North American Conference on Molecular Beam Epitaxy (NAMBE 2013), Banff, Alberta, Canada, 05.-11.10.2013

A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Si, NanoDay 2013, Hannover, Germany, 10.10.2013

D. Schwendt, P. Shekhter, M. Eizenberg, H.-J. Osten (2013): Tuning the properties of rare-earth oxides for advanced nano-electronic applications, First Conference of Scientific Cooperation between Lower Saxony and Israel, Hannover, Germany, 06.-07.10.2013

D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten  (2013): Carbon-mediated Epitaxy of Ge on Si, NanoDay 2013, Hannover, Germany, 10.10.2013

D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Influence of growth temperature on strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy, 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, 02.-06.06.2013

F. Kiefer, R. Peibst, T. Ohrdes, T. Dullweber, J. Krügener, H.-J. Osten, C. Schöllhorn, A. Grohe, R. Brendel (2013): Analyzing the recombination current densities in industrial like n-type PERT solar cells exceeding 20% efficiency, Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013

H.-J. Osten (2013): Forschungsaktivitäten am MBE Institut, Vakuumtag, Hannover, Germany, 09.10.2013

H.-J. Osten (2013): Elektronik: gestern - heute - morgen, VDI AK Mikroelektronik, Mikro- und Feinwerktechnik, Hannover, Germany, 09.10.2013

H.-J. Osten (invited) (2013): Improving Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon, AVS 60th International Symposium and Exhibition, Long Beach, California, USA, 27.10-01.11.2013

J. Krügener, F. A. Wolf, R. Peibst, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, H.-J. Osten (2013): Correlation of dislocation line densities and emitter saturation current densities of ion implanted boron emitters, Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013

R. Bar, S. Manna, A. Laha, H.-J. Osten, S. K. Ray (2013): Si1-xGex Nanocrystals Embedded in Epitaxial Gd2O3 on p-Si (111) Grown by Molecular Beam Epitaxy for Nanocrystal Based Flash Memory Devices, International Union of Materials Research Societies – International Conference in Asia – 2013 (IUMRS-ICA-2013), Bangalore, India, 16.-20.12.2013

2012

A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy, E-MRS 2012 Spring Meeting, Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, Strasbourg, France, 14.-18.05.2012

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2012): Encapsulated solid phase epitaxy of Ge quantum well embedded into epitaxial rare earth oxide, 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012

D. Schwendt, H.-J. Osten (2012): Influence of strain on dielectric properties of rare earth oxides, 17th Workshop on Dielectrics in Microelectronics (WoDiM 2012), Dresden, Germany, 25.-27.06.2012

D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy, 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012

H.-J. Osten (2012): Epitaxial Oxides on Silicon for CMOS and Beyond, Indian Institute of Technology Hyderabad, Hyderabad, India, 13.12.2012

H.-J. Osten (invited) (2012): Strain-driven enhancement of dielectric properties in thin metal oxides layers epitaxially grown on silicon, International Conference on Emerging Electronics (ICEE), Mumbai, India, 15.-17.12.2012

H.-J. Osten (invited), D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon, 222th Electrochemical Society Meeting, Honolulu, Hawaii, USA, 07.-12.10.2012

H.-J. Osten, T. Wietler (2012): Materialien und Bauelemente für zukünftige Si-basierte Elektronik, LNQE-Kolloquium, Hannover, Germany, 05.12.2012

2011

A. Grimm, D. Schwendt, H.-J. Osten (2011): Structural investigation of epitaxial high-k gate dielectrics, Deutscher MBE-Workshop 2011, Berlin, Germany, 5.-6.10.2011

A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substrates, 220th Electrochemical Society Meeting, Boston (MA), USA, 09.-14.10.2011

D. Schwendt, H.-J. Osten (2011): Photoelectron spectroscpoy of ultrathin epitaxial rare earth oxides on silicon, Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011

D. Tetzlaff , T. Wietler, E. Bugiel, H.-J. Osten (2011): Carbon-Mediated Growth of Epitaxial Germanium Layers on Silicon, 7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011

D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Ge-Epitaxie für NIR-Fotodetektoren, NanoDay 2011, Hannover, Germany, 29.09.2011

D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Kohlenstoffunterstütztes Wachstum von epitaktischen Germaniumschichten auf Silizium, Deutscher MBE-Workshop 2011, Berlin, Germany, 5.-6.10.2011

H.-J. Osten (invited) (2011): Epitaxial Oxides on Silicon for CMOS and Beyond, 38th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI), San Diego, California, USA, 16.-20.01.2011

H.-J. Osten (invited) (2011): Epitaxial Lanthanide Oxides on Silicon for CMOS and Beyond, 7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011

J. Krügener, A. Fissel, H.-J. Osten (2011): Formation of large step-free areas on silicon, Deutscher MBE-Workshop 2011, Berlin, Germany, 5.-6.10.2011

J. Ruhkopf, T. F. Wietler, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates, Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011

T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-Mediated Epitaxy of Germanium on Vicinal Silicon Substrates, 7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011

T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-modifizierte Epitaxie von Germanium auf fehlgeneigten Siliziumsubstraten, Deutscher MBE-Workshop 2011, Berlin, Germany, 5.-6.10.2011

2010

A. Fissel, J. Kruegener, H.-J. Osten (2010): Towards controlled molecular beam epitaxial growth of artificially layered Si structures, 16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010

A. Laha, A. Fissel, H.-J. Osten (2010): Impact of interfacial germanium on the properties of molecular beam epitaxial grown Gd2O3 on Si, 16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010

A. Laha, A. Fissel, H.-J. Osten (2010): Growth of graphite-like carbon on Si(111) substrates using solid source molecular beam epitaxy technique, 16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010

A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V . Afanas’ev, M. Badylevich (2010): Semiconductor Nanostructures in Crystalline Rare Earth Oxide for Nanoelectronic Device Applications, 22nd International Conference on Microelectronics (ICM2010), 2010, Cairo, Egypt, 19.-22.12.2010
DOI: 10.1109/ICM.2010.5696129

A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V. Afanas'ev, M. Badylevich (2010): Incorporating Si, Ge and Si1-xGex Nanostructures into Crystalline Rare Earth Oxide for Nanoelectronic Device Applications, E-MRS Fall Meeting 2010, Symp. E: Nanoscaled Si, Ge based materials, Warsaw, Poland, 13.-17.09.2010

D. Schwendt, E. Bugiel, H.-J. Osten (2010): Tuning the Properties of Crystalline Lanthanide Oxides on Silicon, International Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010

H.-J. Osten (invited) (2010): Challenges on Large Scale Use of QNM Technologies, Panel discussion at the 4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010

H.-J. Osten (invited) (2010): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics, International Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010

H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare-Earth Oxide Matrix for Opto and Nano Electronic Applications, 4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010

J. Krügener, H.-J. Osten, A. Fissel (2010): Influence of Surface Preparation Conditions on the Surface Defect Structure of Boron-covered Si(111): An Ultraviolet Photoelectron Spectroscopy Study, 37th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Fe, New Mexico, USA, 10.-14.01.2010

R. Endres, H. Gottlob, M. Schmidt, D. Schwendt, H.-J. Osten, U. Schwalke (2010): Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations, 218th ECS Meeting, Las Vegas, Nevada, USA, 10.-15.10.2010

R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten (2010): Growth and studies of ultra thin Gd2O3 layers and Gd2O3/Si/Gd2O3 stacking on p-Si(111) wafers by molecular beam epitaxy for resonant tunnel diode applications, 16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010

2009

A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.-J. Osten (2009): Preparation and Properties of Si nanostructures embedded into epitaxial oxides, Nanotech Europe 2009, Berlin, Germany, 28.-30.09.2009

A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.-J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications, 17th Annual International Conference on Composites/Nano engineering (ICCE - 17), Hawaii, USA, 26.07.-01.08.2009

A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications, 17th International Conference on Composites/Nano Engineering (ICCE-17), Honolulu, USA, 26.07.-01.08.2009

A. Fissel, J. Krügener, D. Schwendt, H.-J. Osten (2009): Role of boron and surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study, 12th International Conference on the Formation of Semiconductor Interfaces" (ICFSI-12), Weimar, Germany, 05.-10.07.2009

A. Fissel, R. Dargis, E. Bugiel, J. Krügener, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Single-crystalline silicon on single-crystalline insulator prepared by different approaches, E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2009): Epitaxial Gd2O3 on strained Si1-xGex layers: Growth and electrical characterization, E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009

A. Laha, E. Bugiel, J. X. Wang, A. Fissel, H.-J. Osten (2009): Effect of Domain Boundaries on Dielectric Properties of Lanthanide Oxide based Gate Dielectrics, 3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009

A. Laha, E. Bugiel, J.X. Wang, H.J. Osten, A. Fissel (2009): Effect of domain boundaries on dielectric properties of lanthanide oxide based gate dielectrics, 3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009
DOI: 10.1109/ICSCS.2009.5414203

A. Laha, M. Jestremski, E. Bugiel, D. Wong, A. Fissel, H.-J. Osten, Ashkar Ali, S. Datta (2009): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano-electronic Device Application, 2009 International Conference on Mechanical and Electronics Engineering (ICMEE), Chennai, India, 27.-29.06.2009

A. Laha, M. Jestremski, E. Bugiel, D. Wong, and H.-J. Osten, A. Fissel, A. Ali, S. Datta (2009): Quantum Effects in Group IV Nanostructures Embedded into Crystalline Rare Earth Oxides on Silicon Substrates, International Conference on Materials for Advanced Technologies (ICMAT2009), Singapore, 28.06.-03.07.2009

A. N. Nazarov, V. S. Lysenko, Y. V.Gomeniuk, Y. Y.Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and bulk properties of MBE-grown rare-earth metal oxides on silicon, 216th ECS Meeting, Wien, Austria, 04.-09.10.2009

D. Schwendt, D. Tetzlaff, E. Bugiel, H.-J. Osten (2009): Stability of Crystalline Gd2O3 Thin Films on Silicon during Post-growth Processing, 3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009

H.-J. Osten (invited) (2009): Epitaxy of High-K Oxides, 15th Euro-MBE, Zakopane, Poland, 08.-11.03.2009

H.-J. Osten (invited) (2009): Introducing Crystalline Rare-Earth Oxides into Si-based Electronics, XVth International Workshop on the Physics of Semiconductor Devices (XVth IWPSD), Delhi, India, 15.-19.12.2009

H.-J. Osten, A. Laha, A. Fissel (invited) (2009): Epitaxial Lanthanide Oxide based Gate Dielectrics, MRS Spring Meeting, San Francisco, California, USA, 13.-17.04.2009

H.-J. Osten, A. Laha, D. Schwendt, E. Bugiel, A. Fissel (2009): Growth of Epitaxial Lanthanide Oxide based Gate Dielectrics, 3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009

H.J. Osten, A. Laha, E. Bugiel, D. Schwendt, A. Fissel (2009): Growth of epitaxial lanthanide oxide based gate dielectics, 3th International Conference on Signals, Circuits and Systems (SCS), Medenine, Tunisia, 06.-08.11.2009
DOI: 10.1109/ICSCS.2009.5414212

J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure, 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), Shenzhen, China, 05.-08.01.2009

R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide, 4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009

2008

A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008

A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanas'ev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008

A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applications, E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008

A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V. Afanasiev, A. Fissel, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides, Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD) Nottingham, UK, 07.-09.04.2008

H.-J. Osten, A. Laha, E. Bugiel, A. Fissel (2008): Si Nanostructures Embedded into Epitaxial Gd2O3 on Si, 15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, 03.-08.08.2008

M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure of interfaces of cubic Gd2O3 with (111)Si and Si nano-clusters, E-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008

M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, H.-J. Osten (2008): CMOS Integration of Epitaxial Gd2O3, 5th Workshop on Dielectrics in Microelectronics (WoDiM), Bad Saarow, Germany, 23.-25.06.2008

Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, China, 20.-23.10.2008

R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2008): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications, 14th International Conference on Solid Films and Surfaces (ICSFS), Dublin, 29.06.-04.07.2008

T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates, 4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008

2007

A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis H.-J. Osten (2007): Silicon in functional epitaxial oxides: A new group of nanostructures, The 6th International Conference on Low Dimensional Structures and Devices (LDSD), San Andres, Colombia, 15.-20.04.2007

A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: A route towards tuning the electrical properties, 15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007

A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2007): Confining single crystal Si-nanoclsuters into epitaxial rare earth oxides: Taking advantage of quantum phenomena to pratical applications, IUMRS-ICAM, Bangalore, India, 08.-13.10.2007

A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-k dielectric, 15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007

B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H.-J. Osten (2007): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy, 37th European Solid-State Device Research Conference, München, Germany, 11.-13.09.2007

E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation, Microscopy Conference, Saarbrücken, 02.-07.09.2007

E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal stability of Pt/Epitaxial Gd2O3/Si Stacks, MRS Spring Meeting 2007, San Francisco, California, USA, 09.-13.04.2007

H.-J. Osten (invited) (2007): From high-K application to nanostructures: Integration of epitaxial gadolinium oxide into silicon, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007

H.-J. Osten (invited) (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies, 212th ECS Meeting, Washington, D.C., USA, 07.-12.10.2007

H.-J. Osten, D. Kühne, A. Laha, R. Dargis, M. Czernohorsky, E. Bugiel, A. Fissel (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: From High-K Application to Nanostructures, Jahrestagung der Deutsche Physikalischen Gesellschaft, Regensburg, Germany, 25.-30.03.2007

H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (invited) (2007): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures, 15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007

2006

A. Fissel, C. R. Wang, E. Bugiel, and H.-J. Osten (2006): Preparation of twinning superlattices in silicon by atomic-scale surface manipulation: First step towards Si polytype growth, 24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006

A. Fissel, E. Bugiel, and H.-J. Osten (2006): Formation of Si twinning-superlattice: First Step towards Si polytype growth, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Properties of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2006): Growth and Properties of Crystalline Gadolinium Oxide Dielectric Layers On Silicon Carbide for High-K Application, 6th European Conference on Silicon Carbide and Related Materials (ECSCRM), Newcastle upon Tyne, UK, 03.-07.09.2006

A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Comparative Investigation of Epitaxial Gd2O3 Thin Films Grown on Si Substrates with Different Orientations for High-K Application, 48th Electronic Materials Conference, Pennsylvania State University, Pennsylvania, USA, 28.-30.06.2006

A. Laha, A. Fissel, E. Bugiel, O. Kirfel, H.-J. Osten (2006): Epitaxial multi-component rare earth oxide for high-K application, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

D. Kühne, A. Fissel, E. Bugiel, H.-J. Osten (2006): Novel approach for fabrication of single crystalline insulator/Si/insulator double barrier nanostructures using cooperative vapour-solid-phase epitaxy, MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006

D. Kühne, A. Fissel, E. Bugiel, H.-J. Osten (2006): Fabrication of single crystalline insulator/Si/insulator double barrier nanostructure using cooperative vapor-solid-phase epitaxy, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2006): Novel Approach for Fabrication of Single Crystalline Insulator/Si/Insulator Nanostructures: Cooperative Vapour-Solid phase Epitaxy, 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006

E. Bugiel, M. Lewerenz, H.-J. Osten (2006): Fabrication of well-defined individual dislocations in SiGe as a novel 1-dimensional system, E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006

H.-J. Osten (invited) (2006): MBE growth and Properties of Crystalline Oxide/Silicon/Oxide Nanostructures, ESF Exploratory Workshop, Como, Italy, 12.-13.09.2006

H.-J. Osten, A. Laha, A. Fissel (2006): Influence of Si substrate orientation on growth and electrical properties of epitaxial Gd2O3 thin films for high-κ application, 37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, 06.-09.12.2006

H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2006): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures, 24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006

H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kühne, A. Fissel (2006): Interface engineering during epitaxial growth of high-k lanthanide oxides on silicon, MRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006

M. Czernohorsky, A. Fissel, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide, 33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006

M. Czernohorsky, A. Fissel, R. Dargis, E. Bugiel, H.-J. Osten (2006): Wachstum von kristallinem Gadoliniumoxid auf Silicium, Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006

R. Dargis, A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Epitaxie von Gadoliniumoxid auf Siliziumcarbid, Deutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006

2005

A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky, H. J. Osten (2005): Interface formation during epitaxial growth of Neodymium Oxide on Si(001), 207th Electrochemical Society Meeting, Quebec (Canada), 15.-20.05.2005

E. Bugiel, H.J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of Epitaxial High-k Dielectrics on Silicon, Microscopy of Semiconductor Materials (MSM) XIV Conference, Oxford (UK), 11.-14.04.2005

H.-J. Osten (invited) (2005): Auf dem Weg zur Nanoelektronik, EKompass Workshop, Hannover, Germany, 25.04.2005

H.-J. Osten (invited) (2005): MBE of rare earth oxides, European Science Foundation, Exploratory Workshop, San Remo, Italy, 11.-13.05.2005

H.-J. Osten (invited) (2005): Interface formation during epitaxial growth of binary metal oxide on silicon, NATO workshop Defects in High-K Materials, St. Petersburg, Russia, 11.-14.07.2005

H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrik, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.J. Osten, O. Kirfel, A. Fissel  (2005): Crystalline Gd2O3 High-k Gate Dielectrics with TiN Capped Fully Silicided (FUSI) NiSi Electrodes, 36th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington (USA), 1.-3.12.2005

M. Czernohorsky, O. Kirfel, Z. Elassar, E. Bugiel, A. Fissel, H.-J. Osten (2005): MBE Growth and Interface Formation of Neodymium Oxide on Silicon, 13th Euro-Konferenz Molecular Beam Epitaxy, Grindelwald, Switzerland, 07.-09.03.2005

2004

A. Fissel, C. Wang, E. Bugiel, H.-J. Osten (2004): Epitaxial growth of non-cubic silicon, The 5th International Conference on Low Dimensional Structures and Devices (LDSD), Cancun, Mexico, 12.-17.12.2004

H.-J. Osten (invited) (2004): The red brick wall of traditional semiconductor electronics, Hereaus-Seminar "Spintronic", Bad Honnef, 11.-14.01.2004

H.-J. Osten (invited) (2004): Epitaxial High-k Dielectrics on Silicon, 5th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia, 17.-21.10.2004

H.-J. Osten, E. Bugiel, A. Fissel, O. Kirfel (invited) (2004): Epitaxial Silicon/Metal Oxide Stacks for various applications, 11th Advanced Heterostructure Workshop, Hawaii, USA, 05.-10.12.2004

H.-J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, A. Fissel (invited keynote lecture) (2004): Growth and Properties of Epitaxial Metal Oxides for High-K Dielectrics, IC MBE 2004, Edinburgh, UK, August 2004

2003

A. Fissel, H.-J. Osten, and E. Bugiel (invited) (2003): Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to Praseodymium Oxide, Physics and Chemistry of Semiconductor Interfaces, Salt Lake City, Utah, USA, 19.-23.01.2003

H.-J. Osten (invited) (2003): Growth, properties, and application of ternary SiGeC alloys on Si, Keynote lecture at the III. Ibero American Workshop on Nanostructures for Application in Micro and Optoelectronic, Madrid, Spain, 24.-28.03.2003

H.-J. Osten (invited) (2003): Epitaxial high-K materials as future gate dielectrics, HeTech03, San Rafael, Segovia, 12.-15.10.2003

H.-J. Osten, A. Bugiel, A. Fissel (invited) (2003): Understanding epitaxial growth of alternative high-K dielectrics on Si(001), ESF Workshop, Zürich, Switzerland, 17.-18.03.2003

H.-J. Osten, A. Fissel (invited) (2003): Epitaxial High-K Materials, 12th EURO-MBE 2002, Bad Hofgastein, Austria, 16.-19.02.2003

2002

H.-J. Osten (invited) (2002): SiGe:C Device Application, 201st ECS Meeting, 9th International Symposium on Silicon Material Science and Technology, Philadelphia, 12.-17.05.2002

H.-J. Osten, E. Bugiel, A. Fissel (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric, 9th International Workshop on Oxide Electronics (WOE), St. Peter Beach, Florida, Oct. 2002

H.-J. Osten, E. Bugiel, A. Fissel (invited) (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric, Material Research Society, Fall Meeting, Symp. M, Boston, 02.-05.12.2002

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschökel, H.J. Osten, A. Fissel, H.-J. Müssig (invited) (2002): Process integration of crystalline Pr2O3 high-k gate Dielectrics, 32th European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24.-26.09.2002
DOI: 10.1109/ ESSDERC.2002.194954

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H.-J. Osten, A. Fissel, H. J. Müssig (invited) (2002): Process Integration of Crystalline Pr2O3 High-K Gate Dielectrics, 32th European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24.-26.09.2002