Leibniz Universität Hannover Fakultät Fakultät für Elektrotechnik und Informatik
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Institut für Materialien und Bauelemente der Elektronik
 
Institut für Materialien und Bauelemente der Elektronik Forschung Forschungsbereiche SiGe und Ge Epitaxie auf Si
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Journal

  • H. Genath, M. A. Schubert, H. L. Yamtomo, J. Krügener, H. J. Osten (2024): Epitaxial Growth of Nd2O3 layers on Virtual SiGe Substrates on Si(111),  Journal of Applied Physics 135 (2024) 115302
    DOI: 10.1063/5.0191350
  • A. Nanwani, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2022): Improvement of crystal quality and surface morphology of Ge/Gd_2 O_3 /Si(111) epitaxial layers by cyclic annealing and regrowth,  Journal of Physics D: Applied Physics 55 (2022) 115302
    DOI: 10.1088/1361-6463/ac3f0d
  • H. Genath, J. Norberg, B. Wolpensinger, H.-J. Osten (2022): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  Thin Solid Films (2022) 139561
    DOI: 10.1016/j.tsf.2022.139561
  • H. Genath, J. Schmidt, H. J. Osten (2020): Analysis of thin germanium-rich SiGe layers on Si(111) substrates grown by carbon-mediated epitaxy,  Journal of Crystal Growth 535 (2020) 125569
    DOI: 10.1016/j.jcrysgro.2020.125569
  • Y. Barnscheidt, J. Schmidt, H. J. Osten (2020): Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system,  Journal of Applied Crystallography 53 (2020) 1212
    DOI: 10.1107/S1600576720009255
  • Y. Barnscheidt, M. Franck, H. J. Osten (2020): Paving the way to dislocation reductionin Ge/Si(001) heteroepitaxy using C-based strained layer superlattices,  Journal of Applied Physics 128 (2020) 095703
    DOI: 10.1063/5.0004352
  • R. S. Pokharia, K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2019): Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy,  Proc. SPIE 10914, Optical Components and Materials XVI, 1091417
    DOI: 10.1117/12.2509720
  • J. Schmidt, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  Semiconductor Science and Technology 33 (2018) 114002
    DOI: 10.1088/1361-6641/aadffc
  • K. R. Khiangte, J. S. Rathore, S. Das, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures,  Journal of Applied Physics 124 (2018) 065704
    DOI: 10.1063/1.5020026
  • Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H.J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy,  Semiconductor Science and Technology 33 (2018) 104006
    DOI: 10.1088/1361-6641/aade69
  • J. Schmidt, D. Tetzlaff, E. Bugiel, T. Wietler (2017): Surfactant-Mediated Epitaxy of Thin Germanium Films on SiGe(001) Virtual Substrates,  Journal of Crystal Growth 457 (2016) 171
    DOI: 10.1016/j.jcrysgro.2016.06.053
  • J. Schmidt, M. Eilert, S. Peters, T. F. Wietler (2017): Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%,  Applied Surface Science 421 (2017) 772
    DOI: 10.1016/j.apsusc.2016.08.091
  • A. Grimm, A. Fissel, E. Bugiel, T. F. Wietler (2016): In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction,  Applied Surface Science 370 (2016) 40
    DOI: 10.1016/j.apsusc.2016.02.144
  • A. K. Katiyar, A. Grimm, R. Bar, J. Schmidt, T. F. Wietler, H. J. Osten and S. K. Ray (2016): Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films,  Nanotechnology 27 (2016) 435204
    DOI: 10.1088/0957-4484/27/43/435204
  • D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  Journal of Crystal Growth 378 (2013) 254
    DOI: 10.1016/j.jcrysgro.2012.12.087
  • K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2013): Epitaxial Gd2O3 on strained Si1-xGex virtual substrate for next generation complementary metal oxide semiconductor device application,  Applied Physics Letters 103 (2013) 153501
    DOI: 10.1063/1.4824422
  • S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H.-J. Osten, S. K. Ray (2013): MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device,  Nanotechnology 24 (2013) 505709
    DOI: 10.1088/0957-4484/24/50/505709
  • D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Carbon-mediated growth of thin, fully relaxed germanium films on silicon,  Applied Physics Letters 100 (2012) 012108
    DOI: 10.1063/1.3675450
  • R. Peibst, E. P. Rugeramigabo, K. R. Hofmann (2012): Electrical characterization and modelling of n-n Ge-Si heterojunctions with relatively low interface state densities,  Journal of Applied Physics 112 (2012) 124502
    DOI: 10.1063/1.4768255
  • J. S. de Sousa, R. Peibst, M. Erenburg, E. Bugiel, G. A. Farias, J.-P. Leburton, K. R. Hofmann (2011): Single electron charging and discharging analysis in Ge nanocrystal memories,  IEEE Transactions Electron Devices 58 (2011) 376
    DOI: 10.1109/TED.2010.2091959
  • R. Peibst, J. S. de Sousa, K. R. Hofmann (2010): Determination of the Ge-nanocrystal/SiO2 matrix interface trap density from the small signal response of charge stored in the nanocrystals,  Physical Review B 82 (2010) 195415
    DOI: 10.1103/PhysRevB.82.195415
  • A. Laha, E. Bugiel, M. Jestremski, R. Ranjith, A. Fissel, H.-J. Osten (2009): Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide,  Nanotechnology 20 (2009) 475604
    DOI: 10.1088/0957-4484/20/47/475604
  • R. Peibst, T. Dürkop, E. Bugiel, A. Fissel, I. Costina, K. R. Hofmann (2009): Driving mechanisms for the formation of nanocrystals by annealing of ultra-thin Ge layers in SiO2,  Physical Review B 79 (2009) 195316
    DOI: 10.1103/PhysRevB.79.195316
  • T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates,  Solid-State Electronics 53 (2009) 833
    DOI: 10.1016/j.sse.2009.04.027
  • T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann (2009): Influence of Sb Induced Surface Faceting on Structural Properties Of Relaxed Ge Films On Si(001),  Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1199 (2009) 15
    DOI: 10.1063/1.3295345
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2008): Relaxed germanium films on silicon (110),  Thin Solid Films 517 (2008) 272
    DOI: 10.1016/j.tsf.2008.08.018
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2008): Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Silicon,  Applied Surface Science 255 (2008) 778
    DOI: 10.1016/j.apsusc.2008.07.030
  • E. Bugiel, M. Lewerenz, H.-J. Osten (2007): Fabrication of well-defined individual dislocations in SiGe as a novel one-dimensional system,  Physica E: Low-dimensional Systems and Nanostructures 37 (2007) 250
    DOI: 10.1016/j.physe.2006.07.004
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2007): Surfactant‐Mediated Epitaxy of Germanium on Structured Silicon Substrates: Towards Embedded Germanium,  AIP Conference Proceedings 893 (2007) 67
    DOI: 10.1063/1.2729773
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2006): Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates,  Materials Science in Semiconductor Processing 9 (2006) 659
    DOI: 10.1016/j.mssp.2006.08.014
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2006): Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001),  Thin Solid Films 508 (2006) 6
    DOI: 10.1016/j.tsf.2005.08.410
  • H.-J. Osten (2005): Carbon-doping of SiGe,  Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy, Editor J. D. Cressler, CRC Press (2005)
    ISBN: 978-1-4200-2658-0
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2005): Surfactant Mediated Epitaxy of Relaxed Low-Doped Ge Films on Si(001) with Low Defect Densities,  Applied Physics Letters 87 (2005) 182102
    DOI: 10.1063/1.2120900

Konferenzbeitrag

  • H. Genath, J. Krügener, H.-J. Osten (2023): Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers,  International Conference on Silicon Epitaxy and Heterostructures (ICS) / International SiGe Technology and Device Meeting (ISTDM) 2023, Como, Italy, 21. - 25.05.2023
  • H. Genath, H.-J. Osten (2022): Pseudomorphically Strained Ge Layers on (111)-oriented Virtual Si1-xGex Substrates,  LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
  • H. Genath, J. Norberg, B. Wolpensinger, H. J. Osten (2022): Analysis of thin germanium-rich SiGe layers on Si(111) substrates,  International Conference on the Physics of Semiconductors 2022, Sydney, Australia, 27.06.-30.06.2022
  • H. Genath, J. Norberg, B. Wolpensinger, H.-J. Osten (2022): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
  • H. Genath, Y. Barnscheidt, H. J. Osten (2021): Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111),  German MBE Workshop 2021, online event, 14. - 15.10.2021
  • J. Norberg, H. Genath, H. J. Osten (2021): Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,  German MBE Workshop 2021, online event, 14. - 15.10.2021
  • H. Genath, J. Schmidt, H.J. Osten (2019): Carbon-mediated Epitaxy of Germanium-rich SiGe Layers on Si(111) Substrates,  LNQE Nanoday 2019, Hannover, Germany, 10.10.2019
  • Y. Barnscheidt, H. J. Osten (2019): Carbon-Modified-Germanium-Epitaxy: Filtering Threading Dislocations with Carbon Delta Layers,  2nd Joint ISTDM / ICSI 2019 Conference, Madison, USA, 02.-06.06.2019
  • Y. Barnscheidt, J. Schmidt, and H. J. Osten (2019): Grazing Incidence X-Ray Diffraction Analysis of the Periodic Dislocation Network of Ge/Si Heterostructures,  2019 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Monterey, USA, 02.-04.04.2019
    DOI: 10.1149/09301.0067ecst
  • A. Grimm, J. Ruhkopf, E. Bugiel, T. Wietler (2018): Epitaxial Gd2O3 as surface domain indicator: Towards single domain Ge films grown on Si by surfactant-mediated epitaxy,  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
  • J. Schmidt, D. Tetzlaff, T. F. Wietler, H. J. Osten (2018): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27.-31.05.2018
  • K. R. Khiangte, J. S. Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2018): Molecular beam epitaxy of wafer-scale all-epitaxial GeSn-on-insulator on Si(111),  20th International Conference on Molecular Beam Epitaxy (ICMBE 2018) Shanghai, China, 02.-07.09.2018
  • Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T. Wietler, H. J. Osten (2018): Highly Boron Doped Germanium grown by Carbon-Mediated-Epitaxy,  1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany, 27.-31.05.2018
  • Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy,  Summer school on defects in semiconductors, Gent, Belgium, 10.-14.09.2018
  • Y. Barnscheidt, J. Schmidt, G. Wetzel, D. Tetzlaff, T.F. Wietler, H. J. Osten (2018): Ultra-high boron-doped Ge grown by carbon-mediated epitaxy,  German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
  • J. Schmidt, D. Tetzlaff, H. J. Osten (2017): Carbon-mediated epitaxy of SiGe virtual substrates on Si(001),  Austrian MBE Workshop 2017, Vienna, Austria, 28.-29.09.2017
  • J. Schmidt, M. Eilert, S. Peters, T. F. Wietler (2016): Characterization of Thin Si1-xGex Layers on Si(001) by Spectroscopic Ellipsometry for Ge Fractions from 0 to 100%,  7th International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 06.-10.06.2016
  • A. Grimm, A. Fissel, E. Bugiel, H. J. Osten and T. F. Wietler (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  International Workshop on SPA-LEED, Hannover, Germany, 28.05.-29.05.2015
  • A. Grimm, A. Fissel, E. Bugiel, H. J. Osten und T. F. Wietler (keynote talk) (2015): In situ observation of low temperature growth of Ge on Si(111) via RHEED,  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
  • A. Grimm, A. Katiyar, S. K. Ray, H. J. Osten and T. F. Wietler (2015): Room Temperature Photoluminescence of Strained Ge-layers,  Engineering of Functional Interfaces (EnFI), Hannover, Germany, 06.-07.07.2015
  • A. Grimm, L. C. Kähler, and T. F. Wietler (2015): Surface preparation of virtual Germanium substrates on Si(001),  Deutscher MBE-Workshop, Paderborn, Germany, 21.-22.09.2015
  • A. Grimm, L. C. Kähler, T. F. Wietler (2015): Surface preparation of virtual Germanium substrates on Si(001),  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
  • J. Schmidt, D. Tetzlaff, E. Bugiel and T. F. Wietler (2015): Strained Ge layers on virtual Si1-xGex(001) substrates,  Engineering of Functional Interfaces (EnFI), Hannover, Germany, 06.07.-07.06.2015
  • J. Schmidt, D. Tetzlaff, E. Bugiel, and T. F. Wietler (2015): Strained Ge layers on virtual Si1-xGex(001) substrates,  Fifth european conference on crystal growth (eccg5), Bologna, Italy, 09.-11.09.2015
  • J. Schmidt, M. Eilert and T. F. Wietler (2015): Characterization of Si1-xGex layers on Si(001) substrates by spectroscopic ellipsometry,  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
  • T. F. Wietler, E. Bugiel, and K. R. Hofmann (2015): How to get rid of the Sb in Surfactant-mediated Epitaxy of relaxed Germanium films on Silicon (001)?,  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montreal, Kanada, 17.-22.05.2015
  • A. Grimm, A. Katiyar, S. K. Ray, H.-J. Osten, T. F. Wietler (2014): Room Temperature PL of strained Ge-layers,  NanoDay 2014, Hannover, Germany, 01.10.2014
  • D. Tetzlaff (2014): Influence of growth temperature on strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  Deutscher MBE-Workshop, Darmstadt, Germany, 15.-16.09.2014
  • J. Schmidt (2014): Strained Ge layers on virtual Si1-xGex(001) substrates,  Deutscher MBE-Workshop, Darmstadt, Germany, 15.-16.09.2014
  • J. Schmidt, M. Möllers, D. Tetzlaff, E. Bugiel, T. F. Wietler (2014): Defect analysis of virtual SME-SiGe substrates on Si(001) by transmission electron microscopy,  NanoDay 2014, Hannover, Germany, 01.10.2014
  • K. Katiyar, A. Grimm, A. Rakesh, R. Bar, T. Wietler, H.-J. Osten, S. K. Ray (2014): Optical Emission Characteristics of Compressively Strained Ge Films,  Photonics 2014: 12th International Conference on Fiber Optics and Photonics, Kharagpur, India, 13.-16.12.2014
  • A. Grimm (2013): In-situ Untersuchung des epitaktischen Wachstums von Ge auf Si(111) mit RHEED,  Deutscher MBE-Workshop, Dresden, Germany, 30.09.-01.10.2013
  • D. Tetzlaff (2013): Kohlenstoff-unterstützte Epitaxie von Germanium auf Silizium,  Vakuumtag, Hannover, Germany, 09.10.2013
  • D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Carbon-mediated Epitaxy of Ge on Si,  NanoDay 2013, Hannover, Germany, 10.10.2013
  • D. Tetzlaff, T. F. Wietler, E. Bugiel, H.-J. Osten (2013): Influence of growth temperature on strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, 02.-06.06.2013
  • J. Schmidt (2013): Epitaxie von Germanium auf virtuellen SiGe(001)-Substraten,  Deutscher MBE-Workshop, Dresden, Germany, 30.09.-01.10.2013
  • J. Schmidt, D. Tetzlaff, E. Bugiel, T. F. Wietler (2013): Epitaxy of germanium on virtual Si1-xGex(001) substrates,  NanoDay 2013, Hannover, Germany, 10.10.2013
  • R. Bar, S. Manna, A. Laha, H.-J. Osten, S. K. Ray (2013): Si1-xGex Nanocrystals Embedded in Epitaxial Gd2O3 on p-Si (111) Grown by Molecular Beam Epitaxy for Nanocrystal Based Flash Memory Devices,  International Union of Materials Research Societies – International Conference in Asia – 2013 (IUMRS-ICA-2013), Bangalore, India, 16.-20.12.2013
  • T. F. Wietler, J. Schmidt, D. Tetzlaff, E. Bugiel (2013): Surfactant-Mediated Epitaxy of Silicon-Germanium Films on Silicon (001) Substrates,  8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, 02.-06.06.2013
  • A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2012): Encapsulated solid phase epitaxy of Ge quantum well embedded into epitaxial rare earth oxide,  17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012
  • D. Tetzlaff , T. F. Wietler, E. Bugiel, H.-J. Osten (2012): Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy,  17th International Conference on Molecular Beam Epitaxy, Nara, Japan, 23.-28.09.2012
  • T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, E. Garralaga Rojas (2012): Relaxed Germanium on Porous Silicon Substrates,  2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), Berkeley, California, USA, 04.-06.06.2012
  • D. Tetzlaff , T. Wietler, E. Bugiel, H.-J. Osten (2011): Carbon-Mediated Growth of Epitaxial Germanium Layers on Silicon,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
  • D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Ge-Epitaxie für NIR-Fotodetektoren,  NanoDay 2011, Hannover, Germany, 29.09.2011
  • D. Tetzlaff, T. Wietler, E. Bugiel, H.-J. Osten (2011): Kohlenstoffunterstütztes Wachstum von epitaktischen Germaniumschichten auf Silizium,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
  • J. Ruhkopf, T. F. Wietler, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates,  Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011
  • T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-modifizierte Epitaxie von Germanium auf fehlgeneigten Siliziumsubstraten,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
  • T. Wietler (invited) (2011): Surfactant-modified epitaxy of germanium layers on silicon for high-mobility channels,  16th European Molecular Beam Epitaxy Workshop, Alpe d'Huez, France, 20.-23.03.2011
  • A. Laha, A. Fissel, H.-J. Osten (2010): Impact of interfacial germanium on the properties of molecular beam epitaxial grown Gd2O3 on Si,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
  • A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V. Afanas'ev, M. Badylevich (2010): Incorporating Si, Ge and Si1-xGex Nanostructures into Crystalline Rare Earth Oxide for Nanoelectronic Device Applications,  E-MRS Fall Meeting 2010, Symp. E: Nanoscaled Si, Ge based materials, Warsaw, Poland, 13.-17.09.2010
  • T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann (2010): Strain Relaxation Engineering in Epitaxy of Ge on Si(001): The Impact of Sb-Coverage on Interdiffusion,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
  • T. F. Wietler, P. Turewicz, E. P. Rugeramigabo, D. Schwendt, D. Tetzlaff, E. Bugiel, K. R. Hofmann (2010): P-type Ge films on Si(001) grown by surfactant-mediated epitaxy,  International SiGe Technology and Device Meeting, Stockholm, Sweden, 24.-26.05.2010
  • A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2009): Epitaxial Gd2O3 on strained Si1-xGex layers: Growth and electrical characterization,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
  • T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann (2008): Influence of Sb induced surface faceting on misfit dislocation formation in Ge heteroepitaxy on Si(001),  29th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro, Brazil, 27.07.-01.08.2008
  • T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates,  4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2007): Relaxed Germanium Films on Silicon(110),  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2007): Tuning Strain Relaxation by Surface-Morphology: Surfactant-Mediated Epitaxy of Germanium on Si(100) and Si(111),  11th International Conference on the Formatin of Semiconductor Interfaces (ICFSI), Manaus, Brasil, 19.-24.08.2007
  • E. Bugiel, M. Lewerenz, H.-J. Osten (2006): Fabrication of well-defined individual dislocations in SiGe as a novel 1-dimensional system,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
  • T. F. Wietler, E. Bugiel and K. R. Hofmann (2006): Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates,  E-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2006): Surfactant-mediated epitaxy of germanium on structured silicon substrates: towards embedded germanium,  28th International Conference on the Physics of Semiconductors (ICPS), Wien, Austria, 24.-28.07.2006
  • K. R. Hofmann, T. F. Wietler, E. Bugiel, R. Kurps (2005): High Quality Germanium Films Grown Directly on Si(001) by Surfactant Mediated Epitaxy,  Electronic Materials Conference, University of California, Santa Barbara, California, USA, 22.-24.06.2005
  • T. F. Wietler, E. Bugiel, K. R. Hofmann (2005): Surfactant Mediated Epitaxy of High-Quality Low-Doped Relaxed Germanium Films on Silicon (001),  Fourth International Conference on Silicon Epitaxy and Heterostructures, ICSI-4, Awaji Island, Hyogo, Japan, 23.-26.05.2005
  • T. F. Wietler, A. Ott, E. Bugiel, K. R. Hofmann (2004): Advances in Growth and Device Processing of Germanium Films on Si(111),  Second International SiGe Technology and Device Meeting, Frankfurt/Oder, Germany, 16.-19.05.2004
  • T. F. Wietler, K. R. Hofmann (2004): XRD analysis of Ge- and GexSi1-x-layers grown by surfactant mediated epitaxy,  DPG-Frühjahrstagung, Regensburg, Germany, 08.-12.03.2004
  • H.-J. Osten (invited) (2003): Growth, properties, and application of ternary SiGeC alloys on Si,  Keynote lecture at the III. Ibero American Workshop on Nanostructures for Application in Micro and Optoelectronic, Madrid, Spain, 24.-28.03.2003
  • T. Wietler, N. Hoffmann, E. Bugiel, K. R. Hofmann (2003): Growth and characterisation of Ge- and GexSi1-x-multilayers on virtual GeSi-substrates,  DPG-Frühjahrstagung, Dresden, Germany, 24.-28.03.2003
  • H.-J. Osten (invited) (2002): SiGe:C Device Application,  201st ECS Meeting, 9th International Symposium on Silicon Material Science and Technology, Philadelphia, 12.-17.05.2002
  • I. Dumkow, T. Wietler, K. R. Hofmann, M. Horn-von Hoegen (2002): Germanium auf relaxierten Ge0.8Si0.2 Pseudosubstraten Präparation und Morphologie,  DPG-Tagung 2002, Regensburg, Germany, March 11.-15.03.2002
  • S. Paprotta, F. Beug, T. Wietler, R. Ferretti, K. R. Hofmann (2002): Characterization of Gate-Stacks with Silicon and Germanium Nano-Crystals for Memory Application,  International Workshop NEOP, 7, Dresden, Germany, 07.-09.10.2002
  • T. Wietler, N. Hoffmann, K. R. Hofmann (2001): Herstellung von GexSi1-x-Schichten auf Si-Substraten mittels Surfactant Modifizierter Epitaxie,  DPG-Tagung 2001, Hamburg, Germany, 26.-30.03.2001
  • N. Hoffmann, T. Wietler, M. Kammler, D. Reinking, K. R. Hofmann, M. Horn-von Hoegen (2000): Surfactant modifizierte Epitaxie: Herstellung und elektrische Charakterisierung eines Ge-p-Kanal-MOSFETs auf Si-Substrat,  DPG-Frühjahrstagung 2000, Regensburg, Germany, 27.-31.04.2000
  • M. Kammler, K. R. Hofmann, A. A. AlFalou, M. Horn-von Hoegen (1999): Surfactant modifizierte Epitaxie von relaxierten Ge1-xSix/Si-Filmen auf Si,  DPG Frühjahrstagung 1999, Freiburg i. Br., Germany, 22.-26.04.1999

Letzte Änderung: 06.10.20 Druckversion

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