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H. Genath, J. Krügener, H.-J. Osten
(2023):
Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers,
International Conference on Silicon Epitaxy and Heterostructures (ICS) / International SiGe Technology and Device Meeting (ISTDM) 2023, Como, Italy, 21. - 25.05.2023
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U. Singh, H. Genath, R. Sarkar, J. Krügener, H.J. Osten, A. Laha
(2023):
All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT on semi-insulating (0001) 4H-SiC: Increased thermal stability at 473 K,
14th International Conference on Nitride Semiconductors (ICNS14), Fukuoka, Japan, 12. - 17.11.2023
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H. Genath, H.-J. Osten
(2022):
Pseudomorphically Strained Ge Layers on (111)-oriented Virtual Si1-xGex Substrates,
LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
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H. Genath, J. Norberg, B. Wolpensinger, H. J. Osten
(2022):
Analysis of thin germanium-rich SiGe layers on Si(111) substrates,
International Conference on the Physics of Semiconductors 2022, Sydney, Australia, 27.06.-30.06.2022
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H. Genath, J. Norberg, B. Wolpensinger, H.-J. Osten
(2022):
Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,
LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
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H. Genath, Y. Barnscheidt, H. J. Osten
(2021):
Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111),
German MBE Workshop 2021, online event, 14. - 15.10.2021
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J. Norberg, H. Genath, H. J. Osten
(2021):
Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates,
German MBE Workshop 2021, online event, 14. - 15.10.2021
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H. Genath, J. Schmidt, H.J. Osten
(2019):
Carbon-mediated Epitaxy of Germanium-rich SiGe Layers on Si(111) Substrates,
LNQE Nanoday 2019, Hannover, Germany, 10.10.2019
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H. Genath, J. Schmidt, D. Tetzlaff, K. Gosh, A. Laha, and H.J. Osten
(2016):
Epitaxy of Gd2O3 Layers on Virtual GaN Substrates,
LNQE Nanoday 2016, Hannover, Germany, 29.09.2016
