Publikationen
Journal
-
(2024): Epitaxial Growth of Nd2O3 layers on Virtual SiGe Substrates on Si(111), Journal of Applied Physics 135 (2024) 115302
DOI: 10.1063/5.0191350 -
(2024): Assessment of the Required Maximum Power Point Tracking Speed for Vehicle Integrated Photovoltaics Based on Transient Irradiation Measurements and Dynamic Electrical Modelling, Solar RRL 8 (2024) 2300795
DOI: 10.1002/solr.202300795 -
(2022): High time resolution measurement of solar irradiance onto driving car body for vehicle integrated photovoltaics, Progress in Photovoltaics 30 (2022) 543
DOI: 10.1002/pip.3526 -
(2022): A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN, accepted in physica status solidi (a) 2022
DOI: 10.1002/pssa.202200485 -
(2022): Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts, ACS Applied Materials & Interfaces 14 (2022) 17975
DOI: 10.1021/acsami.2c01801 -
(2022): Towards 28 %-efficient Si single-junction solar cells with better passivating POLO junctions and photonic crystals, Solar Energy Materials and Solar Cells 111560 (2022)
DOI: 10.1016/j.solmat.2021.111560 -
(2022): Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells, accepted in Solar RRL 2200578 (2022)
DOI: 10.1002/solr.202200578 -
(2022): Impurity Gettering in Polycrystalline-Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes, Advanced Energy Materials 2103773 (2022)
DOI: 10.1002/aenm.202103773 -
(2021): Firing stability of tube furnace-annealed n-type poly-Si on oxide junctions, accepted in Progress in Photovoltaics (2021)
DOI: 10.1002/pip.3459 -
(2021): Fully screen-printed silicon solar cells with local Al-p+ and n-type POLO interdigitated back contacts with a VOC of 716 mV and an efficiency of 23%, Progress in Photovoltaics: Research and Applications 29 (2021) 516
DOI: 10.1002/pip.3399 -
(2021): Photonic crystals for highly efficient silicon single junction solar cells, Solar Energy Materials and Solar Cells 233 (2021) 111337
DOI: 10.1016/j.solmat.2021.111337 -
(2021): Demonstration of feeding VIPV‐converted energy into the high‐voltage on‐board network of practical light commercial vehicles for range extension, Solar RRL (2021) 2100516
DOI: 10.1002/solr.202100516 -
(2020): Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell, Scientific Reports 10 (2020) 658
DOI: 10.1038/s41598-019-57310-0 -
(2019): Corrigendum to “Influence of (7×7)–“1×1” phase transition on step-free area formation inmolecular beam epitaxial growth of Si on Si(111)”, Journal of Crystal Growth 524 (2019) 125155
DOI: 10.1016/j.jcrysgro.2019.125155 -
(2019): 26.1 %-efficient POLO-IBC cells: Quantification of further efficiency improvements, Progress in Photovoltaics: Research and Applications 27 (2019) 950
DOI: 10.1002/pip.3098 -
(2019): Simulation of solar cell performance based on in the field measured ambience parameters, AIP Conference Proceedings 2147 (2019) 020020
DOI: 10.1063/1.5123825 -
(2019): 26%-efficient and 2cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges, Solar Energy Materials & Solar Cells 200 (2019) 110021
DOI: 10.1016/j.solmat.2019.110021 -
(2018): Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells, Solar Energy Materials & Solar Cells 186 (2018) 184
DOI: 10.1016/j.solmat.2018.06.020 -
(2018): Perimeter Recombination of 25 %-Efficient IBC Solar Cells With Passivating POLO Contacts for Both Polarities, IEEE Journal of Photovoltaics 8 (2018) 23
DOI: 10.1109/JPHOTOV.2017.2762592 -
(2018): Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells, IEEE Journal of Photovoltaics 8 (2018) 79
DOI: 10.1109/JPHOTOV.2017.2775159 -
(2018): Building blocks for industrial, screen-printed double-side contacted POLO cells with highly transparent ZnO:Al layers, IEEE Journal of Photovoltaics 8 (2018) 719
DOI: 10.1109/JPHOTOV.2018.2813427 -
(2018): High temperature annealing of ZnO:Al on passivating POLO junctions: Impact on transparency, conductivity, junction passivation and interface stability, IEEE Journal of Photovoltaics 9 (2018) 89
DOI: 10.1109/JPHOTOV.2018.2878337 -
(2017): Fundamental Consideration about Junction Formation Strategies for Phosphorus-doped Emitters with J0e < 10 fA/cm², Energy Procedia 124 (2017) 126
DOI: 10.1016/j.egypro.2017.09.323 -
(2017): A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells, Solar Energy Materials & Solar Cells 173 (2017) 106
DOI: 10.1016/j.solmat.2017.05.041 -
(2017): Introducing Pinhole Magnification by Selective Etching: Application to Poly-Si on Ultra-Thin Silicon Oxide Films, Energy Procedia 124 (2017) 435
DOI: 10.1016/j.egypro.2017.09.270 -
(2017): Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities, Japanese Journal of Applied Physics 56 (2017) 08MB15
DOI: 10.7567/JJAP.56.08MB15 -
(2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, Solar Energy Materials & Solar Cells 173 (2017) 85
DOI: 10.1016/j.solmat.2017.05.055 -
(2017): Junction Resistivity of Carrier-Selective Polysilicon on Oxide junctions and Its Impact on Solar Cell Performance, IEEE Journal of Photovoltaics 7 (2017) 11
DOI: 10.1109/JPHOTOV.2016.2614123 -
(2017): Pinhole Density and Contact Resistivity of Carrier Selective Junctions with Polycrystalline Silicon on Oxide, Applied Physics Letters 110 (2017) 253902
DOI: 10.1063/1.4986924 -
(2017): On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces, Physica Status Solidi A: Applications and Materials Science 217 (2017) 1700058
DOI: 10.1002/pssa.201700058 -
(2016): Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination, IEEE Journal of Photovoltaics 6 (2016) 1175
DOI: 10.1109/JPHOTOV.2016.2591318 -
(2016): Bifacial, Fully Screen-Printed n-PERT Solar Cells With BF2 and B Implanted Emitters, Solar Energy Materials & Solar Cells 157 (2016) 326
DOI: 10.1016/j.solmat.2016.05.028 -
(2016): Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?, Solar Energy Materials & Solar Cells 158 (2016) 60
DOI: 10.1016/j.solmat.2016.05.045 -
(2016): Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions, Energy Procedia 92 (2016) 199
DOI: 10.1016/j.egypro.2016.07.057 -
(2015): Influence of "1x1"- (7x7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111), Journal of Crystal Growth 425 (2015) 154
DOI: 10.1016/j.jcrysgro.2015.02.041 -
(2015): Impact of surface phase coexistence on the development of step-free areas on Si(111), Frontiers of Materials Science 9 (2015) 141
DOI: 10.1007/s11706-015-0282-z -
(2015): Ion implantation of boric molecules for silicon solar cells, Solar Energy Materials & Solar Cells 142 (2015) 12
DOI: 10.1016/j.solmat.2015.05.024 -
(2015): Electrical and Structural Analysis of Crystal Defects after High-Temperature Rapid Thermal Annealing of highly Boron Ion-Implanted Emitters, IEEE Journal of Photovoltaics 5 (2015) 166
DOI: 10.1109/JPHOTOV.2014.2365468 -
(2015): Basic study on the influence of glass composition and aluminum content on the Ag/Al paste contact formation to boron emitters, Energy Procedia 67 (2015) 20
DOI: 10.1016/j.egypro.2015.03.284 -
(2015): Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells, IEEE Journal of Photovoltaics 5 (2015) 507
DOI: 10.1109/JPHOTOV.2014.2382975 -
(2014): Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells, physica status solidi A 212 (2014) 291
DOI: 10.1002/pssa.201431118 -
(2014): Structural analysis of textured silicon surfaces after ion implantation under tilted angle, Semiconductor Science and Technology 29 (2014) 095004
DOI: 10.1088/0268-1242/29/9/095004 -
(2014): A Simple Model Describing the Symmetric I-V Characteristics of p Polycrystalline/n Monocrystalline Si, and n Polycrystalline Si/p Monocrystalline Si Junctions, IEEE Journal of Photovoltaics 4 (2014) 841
DOI: 10.1109/JPHOTOV.2014.2310740 -
(2014): Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions, Solar Energy Materials and Solar Cells 131 (2014) 85
DOI: 10.1016/j.solmat.2014.06.003 -
(2013): Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7x7)-“1x1” surface phase transistion, Surface Science 618 (2013) 27
DOI: 10.1016/j.susc.2013.08.017 -
(2013): Weak Light Performance of PERC, PERT and Standard Industrial Solar Cells, Energy Procedia 38 (2013) 108
DOI: 10.1016/j.egypro.2013.07.256 -
(2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy, physica status solidi C 9 (2012) 2050
DOI: 10.1002/pssc.201200139 -
(2011): Towards controlled molecular beam epitaxial growth of artificially layered Si structures, Journal of Crystal Growth 323 (2011) 144
DOI: 10.1016/j.jcrysgro.2010.12.001 -
(2011): Ultraviolet photoelectron spectroscopic study of elemental boron adsorption and surface segregation on Si(111), Physical Review B 83 (2011) 205303
DOI: 10.1103/PhysRevB.83.205303 -
(2010): Role of boron and (√3x√3)-B surface defects on the growth mode of Si on Si(111), A photoemission and electron diffraction study, physica status solidi A 207 (2010) 245
DOI: 10.1002/pssa.200982433 -
(2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy, Thin Solid Films 518 (2010) 2546
DOI: 10.1016/j.tsf.2009.09.139 -
(2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxides, Vacuum 85 (2010) 523
DOI: 10.1016/j.vacuum.2010.01.026 -
(2009): Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction, Surface Science 603 (2009) 477
DOI: 10.1016/j.susc.2008.12.004 -
(2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
DOI: 10.1109/COMMAD.2008.4802113
