Vorträge

Konferenzbeitrag

• C. Margenfeld, L. Peters, C. Ronning, J. Krügener, J. Hartmann, A. Waag (2023): Engineering the High-Temperature Annealing Process of Aluminium Nitride by Ion Implantation,  14th International Conference on Nitride Semiconductors (ICNS14), Fukuoka, Japan, 12. - 17.11.2023
• H. Genath, J. Krügener, H.-J. Osten (2023): Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers,  International Conference on Silicon Epitaxy and Heterostructures (ICS) / International SiGe Technology and Device Meeting (ISTDM) 2023, Como, Italy, 21. - 25.05.2023
• L. Salomon, G. Wetzel, J. Krügener, R. Peibst (2023): Vehicle-Integrated Photovoltaics: Challenges on Electronics for Maximum Power Output,  The Eighth International Workshop on Power Supply on Chip (PwrSoC), Hannover, Germany, 27. - 29.09.2023
• L. Salomon, R. Peibst, M. Rienäcker, J. Krügener (2023): Optimisation of Photolithographic Fabrication of Photonic Crystals on Rough Wafers for High Efficiency Solar Cells,  13th International Conference on Crystalline Silicon Photovoltaics (13th SiliconPV), Delft, The Netherlands, 11. - 14.04.2023
• M. Rienäcker, J. Maksimovic, Y. Larionova, S. Hock Ng, T. Katkus, T. Pinedo Rivera, M. Stuiber, J. Krügener, F. Haase, R. Brendel, S. John, S. Juodkazis, R. Peibst (2023): Integration of photonic crystals in highly efficient POLO²-IBC cells – interplay between structural, optical and electrical properties,  13th International Conference on Crystalline Silicon Photovoltaics (13th SiliconPV), Delft, The Netherlands, 11. - 14.04.2023
• U. Singh, H. Genath, R. Sarkar, J. Krügener, H.J. Osten, A. Laha (2023): All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT on semi-insulating (0001) 4H-SiC: Increased thermal stability at 473 K,  14th International Conference on Nitride Semiconductors (ICNS14), Fukuoka, Japan, 12. - 17.11.2023
• C. Margenfeld, L. Peters, J. Krügener, C. Ronning, A. Waag (2022): Enhancing Dislocation Annihilation in High-Temperature-Annealed AlN Templates by Ion Implantation,  International Workshop on Nitride Semiconductors (IWN2022), Berlin, Germany, 09.-14.10.2022
• G. Wetzel, L. Salomon, J. Krügener, R. Peibst (2022): Assessment of required MPPT speed based on measured transient irradiance and dynamic electrical modelling for VIPV applications,  33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), Nagoya, Japan, 13.-17.11.2022
• L. Peters, C. Margenfeld, H. Spende, J. Krügener, C. Ronning, A. Waag (2022): A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN,  International Workshop on Nitride Semiconductors (IWN2022), Berlin, Germany, 09.-14.10.2022
• L. Salomon, J. Krügener, R. Peibst (2022): Photolithographic fabrication of photonic crystals on monocrystalline silicon,  LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
• G. Wetzel, J. Krügener, B. Stannowski, S. Janke, R. Peibst (2021): Transient Electrical Characteristics of Hetero Junction Solar Cells under Fast Transient Illumination,  11th International Conference on Crystalline Silicon Photovoltaics (11th SiliconPV), online event, 19. - 23.04.2021
• G. Wetzel, J. Krügener, R. Peibst (2021): From basic studies of transient shading effects to test drives with a PV-equipped light commercial vehicle,  38th European Photovoltaic Solar Energy Conference and Exhibition (38th EUPVSEC), online event, 06. - 10.09.2021
• J. Krügener, M. Rienäcker, S. Schäfer, M. Sanchez, S. Wolter, R. Brendel, S. John, H.-J. Osten, R. Peibst (2021): Towards 28 % Efficient Si Single Junction Solar Cells with Photonic Crystals,  11th International Conference on Crystalline Silicon Photovoltaics (11th SiliconPV), online event, 19. - 23.04.2021
• M. Rienäcker, Y. Larionova, J. Krügener, S. Wolter, R. Brendel, R. Peibst (2021): Rear side dielectrics on interdigitating p + -(i)-n + back-contact solar cells - hydrogenation vs. charge effects,  38th European Photovoltaic Solar Energy Conference and Exhibition (38th EUPVSEC), online event, 26. 30.09.2021
• R. Peibst, H. Fischer, M. Brunner, A. Schiessel, S. Wöhe, R. Wecker, F. Haase, H. Schulte-Huxel, S. Blankemeyer, M. Köntges, C. Hollemann, R. Brendel, G. Wetzel, J. Krügener, H. Nonnenmacher, H. Mehlich, A. Salavei, K. Ding, A. Lambertz, B. Pieters, S. Janke, B. Stannowski, L. Korte (2021): Demonstration of feeding VIPV converted energy into the high voltage on board network of practical light commercial vehicles for range extension,  38th European Photovoltaic Solar Energy Conference and Exhibition (38th EUPVSEC), online event, 06. - 10.09.2021
• G. Wetzel, J. Krügener, R. Peibst (2020): For VIPV applications: Investigation of transient shading with high time resolution under different environmental conditions,  30th Photovoltaic Science and Engineering Conference (PVSEC-30), Jeju, South Korea, 08.-13.11.2020
• J. Krügener, G. Wetzel, C. Hollemann, F. Haase, R. Peibst, H.-J. Osten (2020): Optimization of Doping Profiles in IBC pin Layout using Poly-Si-based Passivating Contacts,  30th Photovoltaic Science and Engineering Conference (PVSEC-30), Jeju, South Korea, 08.-13.11.2020
• F. Haase, C. Hollemann, S. Schäfer, J. Krügener, R. Brendel, R. Peibst (2019): Transferring the record p-type Si POLO-IBC cell technology towards an industrial level,  46th Photovoltaic Specialists Conference (46th IEEE PVSC), Chicago, USA, 16. - 22.06.2019
• G. Wetzel, J. Krügener, R. Peibst, A. Dietrich, B. Nacke, H. J. Osten (2019): Simulation of solar cell performance based on in the field measured ambience parameters,  9th International Conference on Silicon Photovoltaics (9th SiliconPV), Leuven, Belgium, 08. - 10.04.2019
• J. Krügener, F. Haase, C. Hollemann, H.-J. Osten, R. Peibst (2019): Dopant diffusion through pinholes and continuous oxide layers in n-type polysilicon on oxide (POLO) passivating contacts,  29th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
• J. Krügener, F. Haase, C. Hollemann, R. Peibst, U. Höhne, J.-D. Kähler, H.-J. Osten (2019): Surface passivation of in situ doped n-type polysilicon on oxide (POLO) layers for silicon solar cells,  29th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
  DOI: 10.13140/RG.2.2.23832.75529
• S. Schäfer, F. Haase, C. Hollemann, J. Hensen, J. Krügener, R. Brendel, R. Peibst (2019): 26%-Efficient and 2 cm Narrow Interdigitated Back Contact Silicon Solar Cells with Passivated Slits on Two Edges,  9th International Conference on Silicon Photovoltaics (9th SiliconPV), Leuven, Belgium, 08.-10.04.2019
• C. Klamt, V. Krausse, M. Rienäcker, F. Haase, J. Krügener, N. Folchert, R. Brendel, R. Peibst (2018): Intrinsic poly-crystalline silicon region in between the p+ and n+ POLO contacts of an 26.1%-efficient IBC solar cell,  35th European PV Solar Energy Conference and Exhibition (35th EU PVSEC), Brussels, Belgium, 24.-28.09.2018
• F. Haase, C. Klamt, S. Schäfer, A. Merkle, M. Rienäcker, J. Krügener, R. Brendel, R. Peibst (2018): Laser Contact Openings for Local Poly-Si-Metal Contacts,  8th International Conference on Silicon Photovoltaics (8th SiliconPV), Lausanne, Switzerland, 19.-21.03.2018
• J. Krügener (2018): The way towards high efficiency silicon-based solar cells,  IEEE Bombay Section, Indian Institute of Technolgoy Bombay, Mumbai, Indien, 8. November 2018
• J. Krügener, F. Haase, R. Peibst, H. J. Osten (invited) (2018): Ion implantation for photovoltaic applications: Review and outlook for silicon solar cells,  12th Ion Implantation and other Applications of Ions and Electrons 2018 (ION2018), Kazimierz Dolny, Poland, 18.-21.06.2018
• J. Krügener, F. Kiefer, R. Peibst, H. J. Osten (2018): Ion implantation of As, B, P, BF and BF2 on planar and alkaline-textured Si(001) surfaces for photovoltaic applications,  22nd International Conference on Ion Implantation Technology (IIT), Würzburg, Germany, 16.-21.09.2018
  DOI: 10.1109/IIT.2018.8807962
• R. Peibst, N. Folchert, F. Haase, C. Klamt, Y. Larionova, J. Krügener, A. Merkle, B. Min, M. Rienäcker, U. Römer, S. Schäfer, D. Tetzlaff, T. Wietler, R. Brendel (invited) (2018): In-depth Study of poly-Si/Oxide/c-Si Junctions and p+ poly-Si/n+ Poly-Si Tunneling Junctions for Applications in Si Single Junction and Si-Based Tandem Cells,  MRS Fall Metting 2018, Boston, USA, 25.-30.11.2018
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, F. Haase, R. Brendel, R. Peibst, U. Höhne, J.-D. Kähler, T. F. Wietler (2017): A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells,  7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, F. Haase, R. Brendel, R. Peibst, U. Höhne, J.-D. Kähler, T. Wietler (2017): Junction Unchained - Pinhole Detection in Carrier-Selective POLO-Junctions,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• D. Tetzlaff, M. Dzinnik, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-D. Kähler, T. F. Wietler (2017): Introducing Pinhole Magnification by Selective Etching: Application to Poly-Si on Ultra-Thin Silicon Oxide Films,  7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
• D. Tetzlaff, M. Dzinnik, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-d. Kähler, T. Wietler (2017): Tetramethylammoniumhydroxide - Pinhole Magnification by Selective Etching,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• F. Haase, S. Schäfer, F. Kiefer, J. Krügener, R. Brendel, R. Peibst (2017): Perimeter recombination of 25 %-efficient IBC solar cells with passivating POLO contacts for both polarities,  44th Photovoltaic Specialists Conference (44th IEEE PVSC), Washington, D.C., USA, 22.-30.06.2017
• H. S. Laine, V. Vähänissi, Z. Liu, E. Magana, A. E. Morishige, J. Krügener, K. Salo, B. Lai, H. Salvin, D. P. Fenning (2017): Toward Effective Gettering in Boron-Implanted Silicon Solar Cells,  44th Photovoltaic Specialists Conference (44th IEEE PVSC), Washington, D.C., USA, 22.-30.06.2017
• H. S. Laine, V. Vähänissi, Z. Liu, E. Magaña, J. Krügener, A. E. Morishige, K. Salo, B. Lai, H. Savin and D. P. Fenning (2017): Unified model for iron gettering in boron- and phosphorus-implanted silicon,  Gettering and Defect Engineering in Semiconductor Technology 2017 (GADEST2017), Lopota Resort, Georgia, 01.-06.10.2017
• J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H. J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells,  LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
• J. Krügener, F. Haase, M. Rienäcker, R. Brendel, R. Peibst, H.-J. Osten (2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells,  7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
• R. Peibst, S. Reiter, Y. Larionova, R.-R. Koch, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J.-D. Kähler, H. Mehlich (2017): Building blocks for industrial, screen-printed two sides-contacted POLO cells with highly transparent ZnO:Al layers,  33rd European PV Solar Energy Conference and Exhibition (33rd EU PVSEC), Amsterdam, The Netherlands, 25.-29.09.2017
• S. Schäfer, F. Haase, C. Klamt, C. Kruse, F. Kiefer, J. Krügener, R. Brendel, R. Peibst (2017): IBC solar cells with passivating POLO contacts for both polarities – revisiting optical losses,  8th workshop on back contact solar cell and module technology, Freiburg, Germany, 21.-22.11.2017
• A. Fissel, J. Krügener, P. Gribisch, S. Herbers, A. R. Chaudhuri (invited) (2016): Si twinning superlattices on atomically flat mesas: Epitaxial growth and electrical characterization,  2016 Collaborative Conference on 3D and Materials Research (CC3DMR), Incheon/Seoul, South Korea, 20.-24.06.2016
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-D. Kähler, T. Wietler (2016): Evolution of Oxide Disruptions: The (W)hole Story About Passivating Contacts,  43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
  DOI: 10.1109/PVSC.2016.7749582
• D. Tetzlaff, J. Krügener, Y. Larionova, S. Reiter, M. Turcu, R. Peibst, U. Höhne, J.-D. Kähler, T. Wietler (2016): Finding Pinholes in Carrier Selective Polycrystalline Si / Crystalline Si Contacts,  16th European Microscopy Conference, Lyon, france, 28.08.-02.09.2016
• F. Haase, F. Kiefer, J. Krügener, R. Brendel, R. Peibst (2016): IBC solar cells with polycrystalline on oxide (POLO) passivating contacts for both polarities,  26th International Photovoltaic Science and Engineering Conference (PVSEC-26), Singapore, 24.-28.10.2016
• H. Schulte-Huxel, F. Kiefer, S. Blankemeyer, R. Witteck, M. Vogt, M. Köntges, R. Brendel, J. Krügener, R. Peibst (2016): Flip-Flop Cell Interconnection Enabled by an Extremely High Bifaciality of Screen-Printed Ion Implanted N-PERT Si Solar Cells,  32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
• J. Krügener, D. Tetzlaff, Y. Larionova, Y. Barnscheidt, S. Reiter, M. Turcu, R. Peibst, J.-D. Kähler, T. Wietler (2016): Electrical deactivation of boron in p+-poly/SiOx/crystalline silicon passivating contacts for silicon solar cells,  21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
  DOI: 10.1109/IIT.2016.7882868
• J. Krügener, F. Kiefer, M. Rienäcker, F. Haase, R. Peibst, H.J. Osten (2016): Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells,  21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
  DOI: 10.1109/IIT.2016.7882886
• J. Krügener, F. Kiefer, R. Peibst, H.J. Osten (2016): Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters,  21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
  DOI: 10.1109/IIT.2016.7882856
• J. Krügener, Y. Larionova, B. Wolpensinger, D. Tetzlaff, S. Reiter, M. Turcu, R. Peibst, J.-D. Kähler, T. Wietler (2016): Dopant diffusion from p+-poly-Si into c-Si during thermal annealing,  43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
  DOI: 10.1109/PVSC.2016.7750083
• J.-D. Kähler, U. Höhne, J.J. Haase, D. Tetzlaff, J. Krügener, T. Wietler, Y. Larionova, S. Reiter, M. Turcu, R. Brendel, R. Peibst (2016): Low pressure chemical vapour deposition for in situ doped n+ POLO junctions in industrial silicon solar cells,  26th International Photovoltaic Science and Engineering Conference (PVSEC-26), Singapore, 24.-28.10.2016
• M. Rienäcker, A. Merkle, U. Römer, H. Kohlenberg, J. Krügener, R. Brendel, R. Peibst (2016): Recombination behavior of photolithography-free back junction back contact solar cells with carrier-selective polysilicon on oxide junctions for both polarities,  6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
• M. Rienäcker, M. Bossmeyer, A. Merkle, U. Römer, J. Krügener, R. Brendel, R. Peibst (2016): Junction Resistivity of Carrier-Selective Polycrystalline / Crystalline Silicon Junctions and Its Impact on the Solar Cell Performance,  43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
• R. Peibst, U. Römer, Y. Larionova, M. Rienäcker, A. Merkle, N. Folchert, S. Reiter, M. Turcu, B. Min, J. Krügener, D. Tetzlaff, E. Bugiel, T. Wietler, R. Brendel (2016): Working Principle of Carrier Selective Poly-Si/c-Si Junctions: Is Tunneling the Whole Story?,  6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
• R. Peibst, Y. Larionova, S. Reiter, M. Turcu, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J.-D. Kähler, H. Mehlich, S. Frigge (2016): Implementation of n+ and p+ poly-Si/c-Si junctions on front and rear side of double-side contacted industrial silicon solar cells,  32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
  DOI: 10.4229/EUPVSEC20162016-2BO.3.2
• S. Reiter, N. Koper, R. Reineke-Koch, Y. Larionova, M. Turcu, J. Krügener, D. Tetzlaff, T. Wietler, U. Höhne, J.-D. Kähler, R. Brendel, R. Peibst (2016): Parasitic Absorption In Polycrystalline Si-Layers For Carrier-Selective Front Junctions,  6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
• Y. Larionova, R. Peibst, M. Turcu, S. Reiter, R. Brendel, D. Tetzlaff, J. Krügener, T. Wietler, U. Höhne, J.-D. Kähler (2016): Optimization of p+ poly-Si / c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies,  32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
  DOI: 10.4229/EUPVSEC20162016-2CO.4.3
• E. Köhnen, J. Krügener, and H.J. Osten (2015): Surface passivation of ion implanted, Al2O3-passivated p+ emitters,  LNQE Nanoday 2015, Hannover, Germany, 01.10.2015
• J. Krügener, R. Peibst, E. Bugiel, D. Tetzlaff, F. Kiefer, M. Jestremski, R. Brendel, H.-J. Osten (2015): Ion Implantation of Boric Molecules for Silicon Solar Cells,  5th International Conference on Crystalline Silicon Photovoltaics (5th SiliconPV), Konstanz, Germany, 23.03.-25.03.2015
• A. Fissel, A. R. Chaudhuri, J. Krügener, H.-J. Osten (2014): Influence of “1×1” – (7×7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111),  18th International Conference on Molecular Beam Epitaxy (MBE 2014), Flagstaff, Arizona, USA, 07.-12.09.2014
• F. Kiefer, R. Peibst, T. Ohrdes, J. Krügener, H.-J. Osten, R. Brendel (2014): Emitter Recombination Current Densities of Boron Emitters with Silver/Aluminum Pastes,  40th IEEE Photovoltaic Specialists Conference (PVSC-40), Denver, Colorado, 08.-13.06.2014
  DOI: 10.1109/PVSC.2014.6925514
• J. Krügener (2014): Structural investigations of textured silicon after ion implantation,  52. Treffen der Nutzergruppe Ionenimplantation, Dresden, Germany, 13.11.2014
• J. Krügener, E. Bugiel, R. Peibst, F. Kiefer, T. Ohrdes, R. Brendel, H.-J. Osten (2014): Structural Investigation of Ion Implantation of Boron on Random Pyramid Textured Si(100) for Photovoltaic Applications,  20th International Conference on Ion Implantation Technology (IIT), Portland, Oregon, USA, 26.06.-04.07.2014
  DOI: 10.1109/IIT.2014.6940060
• J. Krügener, R. Peibst, E. Bugiel, F. Kiefer, R. Brendel, H.J. Osten (2014): Ion implantation of elemental boron and boric molecules for silicon solar cells,  LNQE Nanoday 2014, Hannover, Germany, 01.10.2014
• R. Peibst, U. Römer, Y. Larionova, H. Schulte-Huxel, T. Ohrdes, M. Haberle, B. Lim, J. Krügener, D. Stichtenoth, T. Wütherich, C. Schöllhorn, J. Graff, R. Brendel (2014): Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions,  40th IEEE Photovoltaic Specialist Conference (PVSC), Denver, Colorado, USA, 08.-13.06.2014
  DOI: 10.1109/PVSC.2014.6925049
• S. Körner, F. Kiefer, R. Peibst, F. Heinemeyer, J. Krügener, and M. Eberstein (2014): Basic Study on the Influence of Glass Composition and Aluminum Content on the Ag/Al Paste Contact Formation to Boron Emitters,  5th Workshop on Metallization for Crystalline Silicon Solar Cells, Constance, Germany, 20.-21.10.2014
• U. Römer, A. Merkle, R. Peibst, T. Ohrdes, B. Lim, J. Krügener, R. Brendel (2014): Ion-implanted Poly-Si / c-Si Junctions as a Back-surface Field in Back-Junction Back-Contacted Solar Cells,  29th European PV Solar Energy Conference and Exhibition (29th EU PVSEC), Amsterdam, Netherlands, 22.-26.09.2014
  DOI: 10.4229/EUPVSEC20142014-2AV.3.61
• A. Fissel, J. Krügener, H.-J. Osten (2013): Impact of surface phase transformation on the epitaxial growth of Si on Si(111),  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warzaw, Poland, 11.-16.08.2013
• F. Kiefer, R. Peibst, T. Ohrdes, T. Dullweber, J. Krügener, H.-J. Osten, C. Schöllhorn, A. Grohe, R. Brendel (2013): Analyzing the recombination current densities in industrial like n-type PERT solar cells exceeding 20% efficiency,  Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013
• J. Krügener, F. A. Wolf, R. Peibst, F. Kiefer, C. Schöllhorn, A. Grohe, R. Brendel, H.-J. Osten (2013): Correlation of dislocation line densities and emitter saturation current densities of ion implanted boron emitters,  Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013
• J. Krügener, N.-P. Harder (2013): Weak Light Performance of PERC, PERT and Standard Industrial Solar Cells,  3rd SiliconPV, Hamelin, Germany, 24.-27.03.2013
• A. Fissel, J. Krügener, H.-J. Osten (2012): Preparation of large step-free mesas on Si(111) by molecular beam epitaxy,  E-MRS 2012 Spring Meeting, Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, Strasbourg, France, 14.-18.05.2012
• J. Krügener (2012): MBE-Wachstum und Charakterisierung von Silizium mit modifizierter Kristallstruktur,  Deutscher MBE-Workshop, Hannover, Germany, 11.-12.09.2012
• J. Krügener, A. Fissel, H.-J. Osten (2011): Formation of large step-free areas on silicon,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• J. Ruhkopf, T. F. Wietler, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates,  Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011
• T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-Mediated Epitaxy of Germanium on Vicinal Silicon Substrates,  7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
• T. F. Wietler, J. Ruhkopf, E. P. Rugeramigabo, D. Tetzlaff, J. Krügener, E. Bugiel, H.-J. Osten (2011): Surfactant-modifizierte Epitaxie von Germanium auf fehlgeneigten Siliziumsubstraten,  Deutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
• A. Fissel, J. Kruegener, H.-J. Osten (2010): Towards controlled molecular beam epitaxial growth of artificially layered Si structures,  16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
• J. Krügener, H.-J. Osten, A. Fissel (2010): Influence of Surface Preparation Conditions on the Surface Defect Structure of Boron-covered Si(111): An Ultraviolet Photoelectron Spectroscopy Study,  37th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI), Santa Fe, New Mexico, USA, 10.-14.01.2010
• A. Fissel, J. Krügener, D. Schwendt, H.-J. Osten (2009): Role of boron and surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study,  12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12), Weimar, Germany, 05.-10.07.2009
• A. Fissel, R. Dargis, E. Bugiel, J. Krügener, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Single-crystalline silicon on single-crystalline insulator prepared by different approaches,  E-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
• R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide,  4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009
• A. Fissel, J. Krügener, E. Bugiel, T. Block, H.-J. Osten (2008): Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes,  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008