The MBE will participate this year with a contributed talk at the International Conference on Silicon Epitaxy and Heterostructures (ICS) / International SiGe Technology and Device Meeting (ISTDM) in Como, Italy. The conference takes place from 21st until 25th of May 2023.
Ms. Hannah Genath will give a presentation entitled "Growth of Nd₂O₃ layers on germanium-rich, (111)-oriented SiGe layers".
More details can be found on the conference website.
