Publications
![[Translate to English:] Übersichtsbild verschiedener prozesstechnischer Anlagen des MBE](/typo3temp/assets/_processed_/4/b/csm_8f3ac6e218033b9a37b33c0698f046255b639297-fp-16-9-0-0_60fd066676.png)
![[Translate to English:] Übersichtsbild verschiedener prozesstechnischer Anlagen des MBE](/typo3temp/assets/_processed_/4/b/csm_8f3ac6e218033b9a37b33c0698f046255b639297-fp-16-9-0-0_254a1b7085.png)
![[Translate to English:] Übersichtsbild verschiedener prozesstechnischer Anlagen des MBE](/typo3temp/focuscrop/8f3ac6e218033b9a37b33c0698f046255b639297-fp-16-9-0-0.png)
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MBE 2020
The Institute for Materials and Devices is primarily focused on two research domains: fundamental research and practical application-driven research. Its objective is to advance novel material solutions for future developments in the fields of microelectronics and photovoltaic applications, based on established processes and methodologies.
The Institute for Materials and Devices is primarily focused on two research domains: fundamental research and practical application-driven research. Its objective is to advance novel material solutions for future developments in the fields of microelectronics and photovoltaic applications, based on established processes and methodologies.
Research Focus
MBE's current research focuses on the integration of germanium and silicon-germanium composite layers onto silicon substrates, harnessing semiconductor technology from microelectronics for photovoltaic purposes, and the epitaxial growth of crystalline oxides on silicon. Details regarding each of these topics are available on the subsequent pages.
