Crystalline Oxides on Silicon

Silicon dioxide (SiO2) has been used as a gate insulator in field-effect transistors since the 1950s. In each new generation of technology, the thickness of this insulating layer has to be reduced. However, a significant problem arises when these insulator layers become very thin. As the layer thickness decreases, there is an exponential increase in direct tunnel current (leakage current). For instance, with a three nanometer thick SiO2 layer at one volt, you'd get a leakage current of about 10^-6 amperes per square centimeter. If you reduce the oxide thickness by a factor of two, the expected leakage current increases dramatically by six orders of magnitude, reaching around 0.5 amperes per square centimeter. This clearly shows that SiO2 won't be suitable as a gate insulator for ultra-small and ultra-fast transistors in the future. To address this issue and reduce leakage currents through the gate insulator without altering the transistor's switching behavior, new materials with a higher dielectric constant than SiO2 are required.

Currently, researchers worldwide are primarily focused on investigating amorphous high-k materials. These materials are highly ionic metal oxides with relatively low crystallization temperatures. When these temperatures are reached, they tend to form polycrystalline phases, which are unsuitable for use as gate insulators. This is primarily due to the high leakage currents that occur along the grain boundaries and the resulting increased surface roughness. For well-known high-k materials like HfO2 or ZrO2, these crystallization temperatures are typically surpassed during a CMOS process. While it's possible to take steps to raise the crystallization temperature (such as adding Si or Al), this approach is always a trade-off, as it tends to decrease the k value, limiting the achievable layer thickness. An alternative solution is to use epitaxially grown crystalline high-k materials, which eliminate the risk of subsequent crystallization. This approach significantly enhances thermal process stability. Additionally, it offers a well-defined interface with silicon, providing better opportunities for interface engineering. However, it's important to note that growing epitaxial high-k materials on silicon requires a degree of compatibility in terms of atomic spacing and lattice symmetry, limiting the range of suitable materials. Apart from various epitaxial perovskite structures, certain binary metal oxides, especially epitaxially grown binary rare-earth oxides (as seen in the figure), are considered potential candidates.

[Translate to English:] Diagramm der Gitterfehlanpassung verschiedener Selten-Erden-Oxide auf Silizium bzw. Germanium [Translate to English:] Diagramm der Gitterfehlanpassung verschiedener Selten-Erden-Oxide auf Silizium bzw. Germanium [Translate to English:] Diagramm der Gitterfehlanpassung verschiedener Selten-Erden-Oxide auf Silizium bzw. Germanium © MBE 2020
[Translate to English:] Gerenderte Einheitszelle von Gd2O3 [Translate to English:] Gerenderte Einheitszelle von Gd2O3 [Translate to English:] Gerenderte Einheitszelle von Gd2O3 © MBE 2020

The MBE Institute has dedicated several years to the epitaxial growth of crystalline rare-earth oxides on silicon substrates. Specifically, we have been employing gadolinium oxide (Gd2O3) and neodymium oxide (Nd2O3) as model systems. Both of these oxides share the same crystallographic structure, but there's a key difference: the lattice spacing of Gd2O3 is smaller than that of silicon, while that of Nd2O3 is larger than silicon's. Previously, ternary mixed layers of the form (Gd1-xNdx)2O3 (where x = 0 ...1), were grown directly on silicon. This allowed for controlling the lattice mismatch by adjusting the composition. As a result, valuable insights into how lattice strain influences the dielectric properties of these ternary layers were gained [1].

[1] D. Schwendt: Charakterisierung von binären und ternären Seltene Erden Oxiden, Dissertation, Gottfried-Wilhelm Leibniz Universität Hannover, 2012.

  • Publications

    Journal

    • H. Genath, M. A. Schubert, H. L. Yamtomo, J. Krügener, H. J. Osten (2024): Epitaxial Growth of Nd2O3 layers on Virtual SiGe Substrates on Si(111)Journal of Applied Physics 135 (2024) 115302
      DOI: 10.1063/5.0191350
    • K. Gosh, A. Fissl, H. J. Osten, A. R. Chaudhuri (2024): Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin FilmsACS Applied Optical Materials 2 (2024) 191
      DOI: 10.1021/acsaom.3c00397
    • A. Nanwani, R. S. Pokharia, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra (2022): Improvement of crystal quality and surface morphology of Ge/Gd_2 O_3 /Si(111) epitaxial layers by cyclic annealing and regrowthJournal of Physics D: Applied Physics 55 (2022) 115302
      DOI: 10.1088/1361-6463/ac3f0d
    • K. Ghosh, A. Dhara, S. Dhara, A. Fissel, H.-J. Osten, A. R. Chaudhuri (2022): Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic QuasiparticlesACS Applied Nano Materials (2022)
      DOI: 10.1021/acsanm.2c01767
    • A. Rawat, K. K. Roluahpuia, P. Gribisch, H.-J. Osten, A. Laha, S. Mahapatra, U. Ganguly (2021): Epitaxial Ge-Gd2O3 on Si(111) substrate by sputtering for germanium-on-insulator applicationsThin Solid Films 731 (2021) 138732
      DOI: 10.1016/j.tsf.2021.138732
    • R. Sarkar, B. B. Upadhyay, S. Bhunia, R. S. Pokharia, D. Nag, S. Surapaneni, J. Lemettinen, S. Suihkonen, P. Gribisch, H.-J. Osten, S. Ganguly, D. Saha, A. Laha (2021): Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 KIEEE Transactions on Electron Devices 68 (2021) 2653
      DOI: 10.1109/TED.2021.3070838
    • A. Joseph, G. Lilienkamp, T. F. Wietler, H. J. Osten (2020): Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical PropertiesJournal of Electronic Materials 49 (2020) 6270
      DOI: 10.1007/s11664-020-08392-4
    • P. Gribisch, A. Fissel (2020): Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)Journal of Applied Physics 128 (2020) 055108
      DOI: 10.1063/5.0007793
    • P. Gribisch, A. Roy Chaudhuri, A. Fissel (2019): Growth and Dielectric Properties of Monoclinic Gd2O3 on Si(001)ECS Transactions 3 (2019) 57
      DOI: 10.1149/09301.0057ecst
    • P. Gribisch, J. Schmidt, H.-J. Osten, A. Fissel (2019): Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)Acta Crystallographica Section B75 (2019) 59
      DOI: 10.1107/S2052520618017869
    • R. Sarkar, S. Bhunia, D. Nag, B. C. Barik, K. Das Gupta, D. Saha, S. Ganguly, A. Laha, J. Lemettinen, C. Kauppinen, I. Kim, S. Suihkonen, P. Gribisch, H.-J. Osten (2019): Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power applicationApplied Physics Letter 115 (2019) 063502
      DOI: 10.1063/1.5109861
    • A. R. Chaudhuri, A. Fissel, H. J. Osten (2017): Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivationJournal of Materials Research 32 (2017) 699
      DOI: 10.1557/jmr.2017.22
    • M. Moellers, C. Margenfeld, T. F. Wietler, H. J. Osten (2017): Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substratesJournal of Crystal Growth 480 (2017) 141
      DOI: 10.1016/j.jcrysgro.2017.10.019
    • A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T. F. Wietler, H. J. Osten (2016): Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on siliconJournal of Applied Physics 120 (2016) 144103
      DOI: 10.1063/1.4964431
    • H. J. Osten (2016): Epitaxial Oxides on Silicon for CMOS and BeyondECS Transactions 75 (2016) 109
      DOI: 11.1149/07513.0109ecst
    • K. Ghosh, S. Das, A. Fissel, H.J. Osten, A. Laha (2016): Long-Term Stability of Epitaxial (Nd₁₋ₓGdₓ)₂O₃ Thin Films Grown on Si(001) for Future CMOS DevicesIEEE Transactions on Electron Devices 63 (2016) 2852
      DOI: 10.1109/TED.2016.2566681
    • P. Shekhter, D. Schwendt, Y. Amouyal, T. F. Wietler, H. J. Osten, M. Eizenberg (2016): Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3Journal of Applied Physics 120 (2016) 014101
      DOI: 10.1063/1.4958301
    • A. R. Chaudhuri, A. Fissel, and H.-J. Osten (2015): Erratum:“Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si (100)”[Appl. Phys. Lett. 104 (2014) 012906]Applied Physics Letters 106 (2015) 149903
      DOI: 10.1063/1.4917251
    • A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)Applied Physics Letters 104 (2014) 012906
      DOI: 10.1063/1.4861470
    • A. R. Chauhuri, A. Fissel, H.-J. Osten (2014): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on Siphysica status solidi C 11 (2014) 1412
      DOI: 10.1002/pssc.201300596
    • P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectricApplied Physics Letters 105 (2014) 262901
      DOI: 10.1063/1.4905356
    • A. Laha, A. Fissel, H.-J. Osten (2013): Effective control on flat band voltage of epitaxial lanthanide oxide based MOS capacitors by interfacial carbonApplied Physics Letters 102 (2013) 202902
      DOI: 10.1063/1.4807588
    • A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Investigation of band offsets and dc leakage properties of nitrogen doped epitaxial Gd2O3 thin films on SiJournal of Applied Physics 113 (2013) 184108
      DOI: 10.1063/1.4804245
    • A. R. Chaudhuri, A. Fissel, V. R. Archakam, H.-J. Osten (2013): Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen dopingApplied Physics Letters 102 (2013) 022904
      DOI: 10.1063/1.4775688
    • H.-J. Osten (2013): Crystalline oxides on siliconHigh Permittivity Gate Dielectric Materials, Ed. Samares Kar, Springers Series in Advanced Microelectronics 43 (2013) 395
      ISBN: 978-3-642-36535-5
    • S. Islam, D. Mueller-Sajak, K. R. Hofmann, H. Pfnür (2013): Epitaxial thin films of BaSrO as gate dielectricMicroelectronic Engineering 109 (2013) 152
      DOI: 10.1016/j.mee.2013.03.105
    • D. Müller-Sajak, S. Islam, H. Pfnür, K. R. Hofmann (2012): Temperature stability of ultra-thin mixed BaSr-oxide layers and their transformationNanotechnology 23 (2012) 305202
      DOI: 10.1088/0957-4484/23/30/305202
    • D. Schwendt, H.-J. Osten, P. Shekhter, M. Eizenberg (2012): Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on siliconApplied Physics Letters 100 (2012) 232905
      DOI: 10.1063/1.4727893
    • H.-J. Osten, D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on SiliconECS Transactions 50 (2012) 41
      DOI: 10.1149/05004.0041ecst
    • A. Laha, A. Bin, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Enhanced electrical properties of carbon doped epitaxial Gd2O3 thin films on silicon substratesECS Transactions 41 (2011) 101
      DOI: 10.1149/1.3633025
    • A. Laha, B. Ai, P. R. P. Babu, A. Fissel, H.-J. Osten (2011): Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical propertiesApplied Physics Letters 99 (2011) 152902
      DOI: 10.1063/1.3646104
    • E. Lipp, Z. Shahar, B. C. Bittel, P. M. Lenahan, D. Schwendt, H.-J. Osten, M. Eizenberg (2011): Trap-assisted conduction in Pt-gated Gd2O3/Si capacitorsJournal of Applied Physics 109 (2011) 073724
      DOI: 10.1063/1.3573036
    • M. F. Beug, G. Tempel, K. R. Hofmann (2011): Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate CellsIEEE Transactions Electron Devices 58 (2011) 819
      DOI: 10.1109/TED.2010.2102034
    • Y. Y. Gomeniuk, Y. V. Gomeniuk, A. N. Lazarov, V. S. Lysenko, H.-J. Osten, A. Laha (2011): Interface and bulk properties of high-K gadolinium and neodymium oxides on siliconAdvanced Materials Research 276 (2011) 167
      DOI: 10.4028/www.scientific.net/AMR.276.167
    • A. Cosceev, D. Müller-Sajak, H. Pfnür, K. R. Hofmann (2010): Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectricsThin Solid Films 518 (2010) 281
      DOI: 10.1016/j.tsf.2009.10.108
    • A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.-J. Osten (2010): Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxyThin Solid Films 518 (2010) 2546
      DOI: 10.1016/j.tsf.2009.09.139
    • A. Laha, A. Fissel, H.-J. Osten (2010): Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substratesApplied Physics Letters 96 (2010) 072903
      DOI: 10.1063/1.3318260
    • A. Milanov, K. Xu, A. Laha, E. Bugiel, R. Ranjith, D. Schwendt, H.-J. Osten, H. Parala, R. Fischer, A. Devi (2010): Crystalline Gd2O3 thin films with high quality interface on Si(100) by low temperature H2O assisted atomic layer deposition processJournal of the American Chemical Society 132 (2010) 36
      DOI: 10.1021/ja909102j
    • H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic DevicesProceedings of the 4th International Conference on Quantum, Nano and Micro Technologies (2010) 38
      DOI: 10.1109/ICQNM.2010.14
    • J. X. Wang, T. Liu, Z. Wang, E. Bugiel, A. Laha, T. Watahiki, R. Shayduk, W. Braun, A. Fissel, H.-J. Osten (2010): Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to SiMaterials Letters 64 (2010) 866
      DOI: 10.1016/j.matlet.2010.01.045
    • R. Dargis, A. Fissel, D. Schwendt, J. Krügener, T. Wietler, A. Laha, E. Bugiel, H.-J. Osten (2010): Epitaxial growth and thermal stability of silicon layers on crystalline rare-earth metal oxidesVacuum 85 (2010) 523
      DOI: 10.1016/j.vacuum.2010.01.026
    • R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten, K. Xu, A. P. Milanov, A. Devi (2010): Downscaling of defect-passivated Gd2O3 thin films on p-Si(001) wafers grown by H2O-assisted atomic layer depositionSemiconductor Science and Technology 25 (2010) 105001
      DOI: 10.1088/0268-1242/25/10/105001
    • A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H.J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applicationsWorld Journal of Engineering 6 (2009) 245
    • A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas’ev, A. Stesmans, A. Fissel, H.-J. Osten (2009): Integration of low dimensional crystalline Si into functional epitaxial oxidesMicroelectronics Journal 40 (2009) 633
      DOI: 10.1016/j.mejo.2008.06.064
    • A. Nazarov, V. Lysenko, Y. Y. Gomeniuk, Y. V. Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on SiliconECS Meeting Abstracts 902 (2009) 2139
      DOI: 10.1149/1.3206634
    • E. Lipp, H.-J. Osten, M. Eizenberg (2009): The thermal stability of Pt/ epitaxial Gd2O3 / Si stacks and its dependence on heat-treatment ambientJournal of Applied Physics 106 (2009) 113505
      DOI: 10.1063/1.3264674
    • H.-J. Osten, A. Fissel, A. Laha (2009): Introducing Crystalline Rare-Earth Oxides into Si-based ElectronicsProceedings of the XVth International Workshop on the Physics of Semiconductor Devices (IWPSD-2009) 107
    • H.-J. Osten, A. Laha, A. Fissel (2009): Epitaxial Lanthanide Oxide based Gate DielectricsMRS Proceedings 1155: CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications (2009) 97
      DOI: 10.1557/PROC-1155-C01-01
    • J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduka, W. Braun, T. M. Liu, H.-J. Osten (2009): Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates: a diffraction studySemiconductor Science and Technology 24 (2009) 045021
      DOI: 10.1088/0268-1242/24/4/045021
    • J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) HeterostructureProceedings of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS) (2009) 431
      DOI: 10.1109/NEMS.2009.5068613
    • M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, D. Tetzlaff, H.-J. Osten (2009): Complementary metal oxide semiconductor integration of epitaxial Gd2O3Journal of Vacuum Science & Technology B 27 (2009) 258
      DOI: 10.1116/1.3054350
    • R. Dargis, A. Fissel, E. Bugiel, D. Schwendt, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI ApplicationsMaterial Science (MEDŽIAGOTYRA) 15 (2009) 11
    • R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2009): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applicationse-Journal of Surface Science and Nanotechnology 7 (2009) 405
      DOI: 10.1380/ejssnt.2009.405
    • T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2009): Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substratesSolid-State Electronics 53 (2009) 833
      DOI: 10.1016/j.sse.2009.04.027
    • V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2009): Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3Applied Physics Letters 95 (2209) 102107
      DOI: 10.1063/1.3204019
    • A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2008): Silicon in functional epitaxial oxides: A new group of nanostructuresMicroelectronics Journal 39 (2008) 512
      DOI: 10.1016/j.mejo.2007.11.007
    • A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanasiev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell applicationProceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
      DOI: 10.1109/COMMAD.2008.4802118
    • A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2008): Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applicationsSemiconductor Science and Technology 23 (2008) 085015
      DOI: 10.1088/0268-1242/23/8/085015
    • A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applicationsMicroelectronic Engineering 85 (2008) 2350
      DOI: 10.1016/j.mee.2008.09.030
    • A. Laha, E. Bugiel, H.-J. Osten, A. Fissel (2008): Epitaxial Rare Earth Oxide Thin Film: Potential Candidate for Future Microelectronic Devices, Rare Earths: Research and ApplicationsEditor: Keith N. Delfrey, Nova Science Publishers (2008) 301
      ISBN: 978-1-60456-218-7
    • A. Laha, E. Bugiel, J. X. Wang, Q. Q. Sun, A. Fissel, H.-J. Osten (2008): Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin filmApplied Physics Letters 93 (2008) 182907
      DOI: 10.1063/1.3009206
    • B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, H.-J. Osten (2008): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopySolid-State Electronics 52 (2008) 1274
      DOI: 10.1016/j.sse.2008.04.005
    • E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2008): Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfacesApplied Physics Letters 93 (2008) 193513
      DOI: 10.1063/1.3028071
    • H.-J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, A. Fissel (2008): Introducing crystalline rare-earth oxides into Si technologiesphysica status solidi A 205 (2008) 695
      DOI: 10.1002/pssa.200723509
    • M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystalsMicroelectronic Engineering 85 (2008) 2382
      DOI: 10.1016/j.mee.2008.09.002
    • M. Czernohorsky, D. Tetzlaff, E. Bugiel, R. Dargis, H.-J. Osten, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, H. Kurz (2008): Stability of Crystalline Gd2O3 Thin Films on Silicon during Rapid Thermal AnnealingSemiconductor Science and Technology 23 (2208) 035010
      DOI: 10.1088/0268-1242/23/3/035010
    • Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top ElectrodeProceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008) 1276
      DOI: 10.1109/ICSICT.2008.4734784
    • Q.-Q. Sun, A. Laha, S.-J. Ding, D. W. Zhang, H.-J. Osten, A. Fissel (2008): Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V methodApplied Physics Letters 93 (2008) 083509
      DOI: 10.1063/1.2976325
    • Q.-Q. Sun, S.-J. Ding, D. W. Zhang, A. Laha, H.-J. Osten, A. Fissel (2008): Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)Applied Physics Letters 92 (2008) 152908
      DOI: 10.1063/1.2912523
    • V. V. Afanas’ev, M. Badylevich, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel, W. Tian, L. F. Edge, D. G. Schlom (2008): Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La, Nd, Gd, Lu): Effect of 4f-shell occupancyApplied Physics Letters 93 (2008) 192105
      DOI: 10.1063/1.3003872
    • A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K ApplicationMaterial Science Forum 556-557 (2007) 655
      DOI: 10.4028/www.scientific.net/MSF.556-557.655
    • A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2007): Epitaxial multi-component rare earth oxide for high-K applicationThin Solid Films 515 (2007) 6512
      DOI: 10.1016/j.tsf.2006.11.070
    • A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical propertiesMicroelectronic Engineering 84 (2007) 2282
      DOI: 10.1016/j.mee.2007.04.051
    • A. Laha, A. Fissel, H.-J. Osten (2007): Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K applicationApplied Physics Letters 90 (2007) 113508
      DOI: 10.1063/1.2713142
    • A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-K dielectricsMicroelectronic Engineering 84 (2007) 1968
      DOI: 10.1016/j.mee.2007.04.136
    • E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM InvestigationMicroscopy and Microanalysis 13 (2007) 304
      DOI: 10.1017/S1431927607081524
    • E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal Stability of Pt/ Epitaxial Gd2O3/ Si StacksMaterials Research Society Symposium Proceedings 996 (2007) H03-08
    • H.-J. Osten, A. Laha, M. Czernohorsky, R. Dargis, E. Bugiel, A. Fissel (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS TechnologiesECS Transactions 11 (2007) 287
      DOI: 10.1149/1.2779568
    • H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructuresJournal of Vacuum Science & Technology B 25 (2007) 1039
      DOI: 10.1116/1.2720858
    • H.-J. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, A. Fissel (2007): Molecular Beam Epitaxy of Rare-Earth OxidesIn Topics in Applied Physics Volume 106: Rare Earth Oxide Thin Films, Editors M. Fanciulli & G. Scarel, Springer-Verlag Berlin/Heidelberg (2007) 101
      DOI: 10.1007/11499893_7
      ISBN: 978-3-540-35796-4
    • H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (2007): Integration of functional epitaxial oxides into silicon: From high-K application to nanostructuresMicroelectronic Engineering 84 (2007) 2222
      DOI: 10.1016/j.mee.2007.04.092
    • M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans, A. Laha, H.-J. Osten, A. Fissel (2007): Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientationsApplied Physics Letters 90 (2007) 252101
      DOI: 10.1063/1.2746419
    • A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbideJournal of Vacuum Science & Technology B 24 (2006) 2115
      DOI: 10.1116/1.2214702
    • A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K applicationSuperlattices and Microstructures 40 (2006) 551
      DOI: 10.1016/j.spmi.2006.07.002
    • A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, H.-J. Osten (2006): Interface Formation during Molecular beam Epitaxial Growth of Neodymium Oxide on SiliconJournal of Applied Physics 99 (2006) 074105
      DOI: 10.1063/1.2188051
    • A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Crystalline ternary rare earth oxides with capacitance equivalent thickness below 1 nm for high-K applicationApplied Physics Letters 88 (2006) 172107
      DOI: 10.1063/1.2198518
    • A. Laha, E. Bugiel, H.J. Osten, A. Fissel (2006): Erratum: Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application [Applied Physics Letters 88, 172107 (2006)]Applied Physics Letters 89 (2006) 139901
      DOI: 10.1063/1.2354313
    • A. Laha, H.-J. Osten, A. Fissel (2006): Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K applicationApplied Physics Letters 89 (2006) 143514
      DOI: 10.1063/1.2360209
    • E. Bugiel, H.-J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2006): TEM Investigations of Epitaxial High-k Dielectrics on SiliconSpringer Proceedings in Physics 107: Microscopy of Semiconducting Materials, Editors A. G. Cullis & J. L. Hutchinson, Springer-Verlag Berlin Heidelberg (2006) 343
      DOI: 10.1007/3-540-31915-8_73
      ISBN: 978-3-540-31914-6
    • H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten, H. Kurz (2006): 0.86 nm CET Gate Stacks with Epitaxial Gd2O3 High-K Dielectrics and FUSI NiSi Metal ElectrodesIEEE Electron Device Letters 27 (2006) 814
      DOI: 10.1109/LED.2006.882581
    • H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrink, M. C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel (2006): CMOS Integration of Epitaxial Gd2O3 High-K Gate DielectricsSolid State Electronics 50 (2006) 979
      DOI: 10.1016/j.sse.2006.04.018
    • H. D. B. Gottlob, T. Echtermeyer, T. Mollenhauer, M. Schmidt, J. K. Efavi, T. Wahlbrink, M. C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten (2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectricsProceedings of the 36th European Solid-State Device Research Conference (2006) 150
      DOI: 10.1109/ESSDER.2006.307660
    • H.-J. Osten, A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky (2006): Interface formation during epitaxial growth of binary metal oxides on siliconNano-Electronic Semiconductor Devices: Defects in High-k Gate Dielectric Stacks, Editor E. Gusev, Springer Netherlands (2006) 361
      DOI: 10.1007/1-4020-4367-8_29
      ISSN: 978-1-4020-4365-9
    • H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kuehne, A. Fissel (2006): Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on SiliconMRS Proceedings 917: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications, Editors: R. Jammy, A. Shanware, V. Misra, Y. Tsunashima, S. DeGendt (2006) 0917-E10-04
      DOI: 10.1557/PROC-0917-E10-04
    • M. Czernohorsky, A. Fissel, E. Bugiel, O.Kirfel, H.-J. Osten (2006): Impact of Oxygen Supply during Growth on the Electrical Properties of Crystalline Gd2O3 Thin Films on Si(001)Applied Physics Letters 88 (2006) 152905
      DOI: 10.1063/1.2194227
    • E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of epitaxial high-k dielectrics on siliconSpringer Proceedings in Physics 107 (2005) 343
      DOI: 10.1007/3-540-31915-8_73
    • M. F. Beug, R. Ferretti, K. R. Hofmann (2005): Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxidesMicroelectronic Engineering 80 (2005) 444
      DOI: 10.1016/j.mee.2005.04.104
    • H.J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky (2004): High-K dielectrics: the example of Pr2O3, Challenges in Process Simulation(ed.J. Dabrowski and E.R. Weber, Springer Verlag 2004), pp. 259-293
      DOI: 10.1007/978-3-662-09432-7_7
    • A. Fissel, H.J. Osten, E. Bugiel (2003): Towards understanding epitaxial growth of alternative high-k dielectrics on Si(001): Application to praseodymium oxideJournal of Vacuum Science and Technology B 21 (2003) 1765
      DOI: 10.1116/1.1589516
    • H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial Praseodymium Oxide: A New High-K DielectricMaterial Research Society Symposium Proceeding 744 (2003) 15
      DOI: 10.1557/PROC-744-M1.5
    • H.J. Osten, E. Bugiel, A. Fissel (2003): Epitaxial praseodymium oxide: a new high-k dielectricSolid-State Electronics 47 (2003) 2165
      DOI: 10.1016/S0038-1101(03)00190-4
    • A. Fissel, J. Dabrowski, H.J. Osten (2002): Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)Journal of Applied Physics 91 (2002) 8986
      DOI: 10.1063/1.1471943

    Konferenzbeitrag

    • U. Singh, H. Genath, R. Sarkar, J. Krügener, H.J. Osten, A. Laha (2023): All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT on semi-insulating (0001) 4H-SiC: Increased thermal stability at 473 K14th International Conference on Nitride Semiconductors (ICNS14), Fukuoka, Japan, 12. - 17.11.2023
    • H. Genath, Y. Barnscheidt, H. J. Osten (2021): Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111)German MBE Workshop 2021, online event, 14. - 15.10.2021
    • P. Gribisch, A. Fissel (2019): Tuning of morphology and crystal structure of Gd2O3 grown on Si(001)XXth International Workshop on the Physics of Semiconductor Devices (IWPSD 2019), Kolkata, India, 17.-20.12.2019
    • P. Gribisch, A. R. Chaudhuri, A. Fissel (2019): Growth and dielectric properties of monoclinic Gd2O3 on Si(001)2nd Joint ISTDM / ICSI 2019 Conference, Madison, USA, 02.-06.06.2019
      DOI: 10.1149/09301.0057ecst
    • A. Grimm, J. Ruhkopf, E. Bugiel, T. Wietler (2018): Epitaxial Gd2O3 as surface domain indicator: Towards single domain Ge films grown on Si by surfactant-mediated epitaxyGerman MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
    • P. Gribisch, J. Schmidt, H. J. Osten, A. Fissel (2018): Influence of Gd2O3 nanostructure formation on crystal structure and surface morphology during growth on Si(001)German MBE Workshop 2018, Freiburg, Germany, 11.-12.10.2018
    • A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on siliconEMN Meeting on Epitaxy, Budapest, Hungary, 04.-08.09.2016
    • A. Joseph, D. Tetzlaff, J. Schmidt, R. Böttger, T.F. Wietler, H.J. Osten (2016): Properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on siliconDeutscher MBE-Workshop, Garching, Germany, 13.-14.10.2016
    • H. Genath, J. Schmidt, D. Tetzlaff, K. Gosh, A. Laha, and H.J. Osten (2016): Epitaxy of Gd2O3 Layers on Virtual GaN SubstratesLNQE Nanoday 2016, Hannover, Germany, 29.09.2016
    • A. R. Chaudhuri (invited) (2015): Tuning dielectric properties of epitaxial Lanthanide oxides on Si by defect passivationMaterials Research Society (MRS) Fall Meeting, Boston, USA, 29.11.-04.12.2015
    • E. Köhnen, J. Krügener, and H.J. Osten (2015): Surface passivation of ion implanted, Al2O3-passivated p+ emittersLNQE Nanoday 2015, Hannover, Germany, 01.10.2015
    • M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) SubstratesLNQE Nanoday 2015, Hannover, Germany, 01.10.2015
    • M. Möllers, C. Margenfeld, D. Schwendt, E. Bugiel, T. F. Wietler, and H. J. Osten (2015): Non-cubic Gd2O3 on Silicon (111) SubstratesDeutscher MBE-Workshop, Paderborn, Germany, 21.-22.09.2015
    • A. R. Chaudhuri, A. Fissel, H.-J. Osten (2014): Template assisted growth and dielectric properties of Gd2O3 thin films on Si(100)E-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
    • C. Margenfeld (2014): Thermally induced phase change of rare earth oxidesDeutscher MBE-Workshop, Darmstadt, Germany, 15.-16.09.2014
    • H.-J. Osten (invited), D. Schwendt, A. R. Chaudhuri, A. Fissel, P. Shekhter, M. Eizenberg (2014): Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon225th Electrochemical Society Meeting, Orlando, Florida, USA, 11.-15.05.2014
    • K. Ghosh, S. Das, A. Fissel, H.-J. Osten, A. Laha (2014): Long term reliability study of epitaxial neodymium-gadolinium oxides (NGO) on Si substrates for future group IV based CMOS devicesE-MRS 2014 Spring Meeting, Lille, France, 26.-30.05.2014
    • P. Shekhter, A. R. Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H.-J. Osten, M. Eizenberg (2014): The influence of carbon doping on the electric behavior of Gd2O3 as high-k gate dielectricAVS 61th International Symposium and Exhibition, Baltimore, Maryland, USA, 09.-14.11.2014
    • A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on SiE-MRS 2013 Fall Meeting, Warzaw, Poland, 16.-20.09.2013
    • A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Enhanced Dielectric Properties of Nitrogen Doped Epitaxial Gd2O3 Thin Films on SiNanoDay 2013, Hannover, Germany, 10.10.2013
    • A. R. Chaudhuri, A. Fissel, H.-J. Osten (2013): Improving Dielectric Properties of Epitaxial Gd2O3 Thin Films on Si by Dopant Incorporation30th North American Conference on Molecular Beam Epitaxy (NAMBE 2013), Banff, Alberta, Canada, 05.-11.10.2013
    • D. Schwendt, P. Shekhter, M. Eizenberg, H.-J. Osten (2013): Tuning the properties of rare-earth oxides for advanced nano-electronic applicationsFirst Conference of Scientific Cooperation between Lower Saxony and Israel, Hannover, Germany, 06.-07.10.2013
    • H.-J. Osten (invited) (2013): Improving Dielectric Properties of Epitaxial Lanthanide Oxides on SiliconAVS 60th International Symposium and Exhibition, Long Beach, California, USA, 27.10.-01.11.2013
    • D. Schwendt (2012): Spannungseffekte in dünnen, epitaktischen Seltene Erden-OxidenDeutscher MBE-Workshop, Hannover, Germany, 11.-12.09.2012
    • D. Schwendt, H.-J. Osten (2012): Influence of strain on dielectric properties of rare earth oxides17th Workshop on Dielectrics in Microelectronics (WoDiM 2012), Dresden, Germany, 25.-27.06.2012
    • H.-J. Osten (2012): Epitaxial Oxides on Silicon for CMOS and BeyondIndian Institute of Technology Hyderabad, Hyderabad, India, 13.12.2012
    • H.-J. Osten (invited) (2012): Strain-driven enhancement of dielectric properties in thin metal oxides layers epitaxially grown on siliconInternational Conference on Emerging Electronics (ICEE), Mumbai, India, 15.-17.12.2012
    • H.-J. Osten (invited), D. Schwendt (2012): Strain Effects on Dielectric Properties of Thin, Crystalline Rare Earth Oxides on Silicon222th Electrochemical Society Meeting, Honolulu, Hawaii, USA, 07.-12.10.2012
    • A. Grimm, D. Schwendt, H.-J. Osten (2011): Structural investigation of epitaxial high-k gate dielectricsDeutscher MBE-Workshop 2011, Berlin, Germany, 05.-06.10.2011
    • D. Schwendt, H.-J. Osten (2011): Photoelectron spectroscpoy of ultrathin epitaxial rare earth oxides on siliconFrühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, Germany, 13.-18.03.2011
    • H.-J. Osten (invited) (2011): Epitaxial Lanthanide Oxides on Silicon for CMOS and Beyond7th International Conference on Si Epitaxy and Heterostructures (ICSI 7), Leuven, Belgium, 28.08.-01.09.2011
    • H.-J. Osten (invited) (2011): Epitaxial Oxides on Silicon for CMOS and Beyond38th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI), San Diego, California, USA, 16.-20.01.2011
    • A. Laha, E. Bugiel, H.-J. Osten, A. Fissel, V. V . Afanas’ev, M. Badylevich (2010): Semiconductor Nanostructures in Crystalline Rare Earth Oxide for Nanoelectronic Device Applications22nd International Conference on Microelectronics (ICM2010), 2010, Cairo, Egypt, 19.-22.12.2010
      DOI: 10.1109/ICM.2010.5696129
    • D. Müller-Sajak, H. Pfnür, A. Cosceev, K. R. Hofmann (2010): Crystalline lattice-matched B 0.7Sr0.3O on Si(001) as Gate DielectricElectronic Materials Conference, Notre-Dame, Indiana, USA, 23.-25.06.2010
    • D. Schwendt, E. Bugiel, H.-J. Osten (2010): Tuning the Properties of Crystalline Lanthanide Oxides on SiliconInternational Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010
    • H.-J. Osten (invited) (2010): Introducing Crystalline Rare-Earth Oxides into Si-based ElectronicsInternational Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico, 13.-16.06.2010
    • H.-J. Osten, A. Laha, A. Fissel (2010): Si Nanostructures Embedded into Crystalline Rare-Earth Oxide Matrix for Opto and Nano Electronic Applications4th International Conference on Quantum, Nano and Micro Technologies (ICQNM 2010), Sint Maarten, Netherlands Antilles, 10.-16.02.2010
    • R. Endres, H. Gottlob, M. Schmidt, D. Schwendt, H.-J. Osten, U. Schwalke (2010): Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations218th ECS Meeting, Las Vegas, Nevada, USA, 10.-15.10.2010
    • R. Ranjith, A. Laha, E. Bugiel, H.-J. Osten (2010): Growth and studies of ultra thin Gd2O3 layers and Gd2O3/Si/Gd2O3 stacking on p-Si(111) wafers by molecular beam epitaxy for resonant tunnel diode applications16th International Conference on Molecular Beam Epitaxy (MBE2010), 2010, Berlin, Germany, 22.–27.08.2010
    • A. Fissel, A. Laha, E. Bugiel, R. Dargis, A. Ali, H. J. Osten (2009): Tailoring of Si nanostructures embedded into epitaxial oxides for various applications17th International Conference on Composites/Nano Engineering (ICCE-17), Honolulu, USA, 26.07.-01.08.2009
    • A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2009): Epitaxial Gd2O3 on strained Si1-xGex layers: Growth and electrical characterizationE-MRS 2009, Symposium I, Strasbourg, France, 08.-12.06.2009
    • A. Laha, M. Jestremski, E. Bugiel, D. Wong, A. Fissel, H.-J. Osten, Ashkar Ali, S. Datta (2009): Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano-electronic Device Application2009 International Conference on Mechanical and Electronics Engineering (ICMEE), Chennai, India, 27.-29.06.2009
    • A. Laha, M. Jestremski, E. Bugiel, D. Wong, and H.-J. Osten, A. Fissel, A. Ali, S. Datta (2009): Quantum Effects in Group IV Nanostructures Embedded into Crystalline Rare Earth Oxides on Silicon SubstratesInternational Conference on Materials for Advanced Technologies (ICMAT2009), Singapore, 28.06.-03.07.2009
    • A. N. Nazarov, V. S. Lysenko, Y. V.Gomeniuk, Y. Y.Gomeniuk, H.-J. Osten, A. Laha (2009): Interface and bulk properties of MBE-grown rare-earth metal oxides on silicon216th ECS Meeting, Wien, Austria, 04.-09.10.2009
    • D. Müller-Sajak, A. Cosceev, H. Pfnür, K. R. Hofmann (2009): Investigation of Epitaxy and Electrical Properties of the Alkaline-Earth Oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as Alternative Gate Dielectrics6th International Conference on Silicon Epitaxy and Heterostructures, ICSI-6, Los Angeles, USA, 17.-22.05.2009
    • D. Schwendt, D. Tetzlaff, E. Bugiel, H.-J. Osten (2009): Stability of Crystalline Gd2O3 Thin Films on Silicon during Post-growth Processing3rd International Conference on Signals, Circuits and Systems (SCS’09), Djerba, Tunesia, 06.-08.11.2009
    • H.-J. Osten (invited) (2009): Introducing Crystalline Rare-Earth Oxides into Si-based ElectronicsXVth International Workshop on the Physics of Semiconductor Devices (XVth IWPSD), Delhi, India, 15.-19.12.2009
    • H.-J. Osten (invited) (2009): Epitaxy of High-K Oxides15th Euro-MBE, Zakopane, Poland, 08.-11.03.2009
    • H.-J. Osten, A. Laha, A. Fissel (invited) (2009): Epitaxial Lanthanide Oxide based Gate DielectricsMRS Spring Meeting, San Francisco, California, USA, 13.-17.04.2009
    • J. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, T. Liu, H.-J. Osten (2009): Structural Study of Epitaxially Grown Nano-thick Nd2O3/Si(111) Heterostructure4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), Shenzhen, China, 05.-08.01.2009
    • K. R. Hofmann, A. Cosceev, D. Müller-Sajak, H. Pfnür (2009): Crystalline lattice-matched Ba0.7Sr0.3O on Si(001) as Gate DielectricIEEE Semiconductor Interface Specialists Conference (SISC), Arlington, USA, 03.-05.12.2009
    • R. Dargis, A. Fissel, D. Schwedt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.-J. Osten (2009): Epitaxial Growth of Silicon on Rare-Earth Metal oxide4th Symposium on Vacuum based Science and Technology, Koszalin-Kolobrzeg, Poland, 21.-23.09.2009
    • A. Laha, A. Fissel, E. Bugiel, M. Badylevich, V. Afanas'ev, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell applicationConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008
    • A. Laha, E. Bugiel, A. Fissel, H.-J. Osten (2008): Si-nanoclusters embedded into epitaxial rare earth oxides: potential candidate for non-volatile memory applicationsE-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008
    • A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V. Afanasiev, A. Fissel, H.-J. Osten (2008): Integration of low dimensional crystalline Si into functional epitaxial oxidesWorkshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD) Nottingham, UK, 07.-09.04.2008
    • M. Badylevich, S. Shamuilia, V. V. Afanas’ev, A. Stesmans A. Laha, H.-J. Osten, A. Fissel (2008): Electronic structure of interfaces of cubic Gd2O3 with Si(111) and Si nano-clustersE-MRS Meeting 2008, Strasbourg, France, 27.-31.05.2008
    • M. C. Lemme, H. D. B. Gottlob, T. J. Echtermeyer, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, H.-J. Osten (2008): CMOS Integration of Epitaxial Gd2O35th Workshop on Dielectrics in Microelectronics (WoDiM), Bad Saarow, Germany, 23.-25.06.2008
    • Q.-Q. Sun, A. Laha, H.-J. Osten, S.-J. Ding, D. W. Zhang, A. Fissel (2008): Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, China, 20.-23.10.2008
    • R. Dargis, A. Fissel, E. Bugiel, T. Wietler, D. Schwendt, A. Laha, H.-J. Osten (2008): Development of multi-step procedure for epitaxial growth of crystalline silicon on rare-earth-metal oxide for SOI-applications14th International Conference on Solid Films and Surfaces (ICSFS), Dublin, 29.06.-04.07.2008
    • T. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H.-J. Osten (2008): Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates4th International SiGe Technology and Device Meeting (ISTDM 2008), Taiwan, 11.-14.05.2008
    • A. Fissel, D. Kühne, E. Bugiel, A. Laha, M. Czernohorsky, R. Dargis, H.-J. Osten (2007): Silicon in functional epitaxial oxides: A new group of nanostructuresThe 6th International Conference on Low Dimensional Structures and Devices (LDSD), San Andres, Colombia, 15.-20.04.2007
    • A. Laha, A. Fissel, H.-J. Osten (2007): Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: A route towards tuning the electrical properties15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
    • A. Laha, D. Kühne, E. Bugiel, A. Fissel, H.-J. Osten (2007): Confining single crystal Si-nanoclsuters into epitaxial rare earth oxides: Taking advantage of quantum phenomena to pratical applicationsIUMRS-ICAM, Bangalore, India, 08.-13.10.2007
    • A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H.-J. Osten (2007): Charge trapping in ultrathin Gd2O3 high-k dielectric15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
    • B. Raissi, J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H.-J. Osten (2007): High-K-oxide/silicon interfaces characterized by capacitance frequency spectroscopy37th European Solid-State Device Research Conference, München, Germany, 11.-13.09.2007
    • E. Bugiel, A. Fissel, M. Czernohorsky, A. Laha, H.-J. Osten (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM InvestigationMicroscopy Conference, Saarbrücken, 02.-07.09.2007
    • E. Lipp, M. Eizenberg, M. Czernohorsky, H.-J. Osten (2007): Thermal stability of Pt/Epitaxial Gd2O3/Si StacksMRS Spring Meeting 2007, San Francisco, California, USA, 09.-13.04.2007
    • H.-J. Osten (invited) (2007): Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies212th ECS Meeting, Washington, D.C., USA, 07.-12.10.2007
    • H.-J. Osten (invited) (2007): From high-K application to nanostructures: Integration of epitaxial gadolinium oxide into silicon5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France 20.-24.05.2007
    • H.-J. Osten, D. Kühne, A. Laha, R. Dargis, M. Czernohorsky, E. Bugiel, A. Fissel (invited) (2007): Integration of Functional Epitaxial Oxides into Silicon: From High-K Application to NanostructuresJahrestagung der Deutsche Physikalischen Gesellschaft, Regensburg, Germany, 25.-30.03.2007
    • H.-J. Osten, M. Czernohorsky, R. Dargis, A. Laha, D. Kühne, E. Bugiel, A. Fissel (invited) (2007): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures15th Conference on Insulating Films on Semiconductors (INFOS), Athens, Greece, 20.-23.06.2007
    • A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Properties of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbideE-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
    • A. Fissel, M. Czernohorsky, R. Dargis, H.-J. Osten (2006): Growth and Properties of Crystalline Gadolinium Oxide Dielectric Layers On Silicon Carbide for High-K Application6th European Conference on Silicon Carbide and Related Materials (ECSCRM), Newcastle upon Tyne, UK, 03.-07.09.2006
    • A. Laha, A. Fissel, E. Bugiel, H.-J. Osten (2006): Comparative Investigation of Epitaxial Gd2O3 Thin Films Grown on Si Substrates with Different Orientations for High-K Application48th Electronic Materials Conference, Pennsylvania State University, Pennsylvania, USA, 28.-30.06.2006
    • A. Laha, A. Fissel, E. Bugiel, O. Kirfel, H.-J. Osten (2006): Epitaxial multi-component rare earth oxide for high-K applicationE-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
    • H.-J. Osten (invited) (2006): MBE growth and Properties of Crystalline Oxide/Silicon/Oxide NanostructuresESF Exploratory Workshop, Como, Italy, 12.-13.09.2006
    • H.-J. Osten, A. Laha, A. Fissel (2006): Influence of Si substrate orientation on growth and electrical properties of epitaxial Gd2O3 thin films for high-κ application37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, 06.-09.12.2006
    • H.-J. Osten, D. Kühne, A. Laha, M. Czernohorsky, E. Bugiel, A. Fissel (2006): Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures24th North American Conference on Molecular Beam Epitaxy, Durham, North Carolina, USA, 08.-11.10.2006
    • H.-J. Osten, M. Czernohorsky, E. Bugiel, D. Kühne, A. Fissel (2006): Interface engineering during epitaxial growth of high-k lanthanide oxides on siliconMRS Spring Meeting 2006, San Francisco, California, USA, 18.-21.04.2006
    • M. Czernohorsky, A. Fissel, H.-J. Osten (2006): Characterization of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide33rd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI), Cocoa Beach, Florida, USA, 15.-19.01.2006
    • M. Czernohorsky, A. Fissel, R. Dargis, E. Bugiel, H.-J. Osten (2006): Wachstum von kristallinem Gadoliniumoxid auf SiliciumDeutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006
    • O. Kerker, T. F. Wietler, K. R. Hofmann (2006): Characterization of HfO2 deposited by reactive sputtering as gate dielectric for epitaxial Ge-MOSFETs on Si wafersE-MRS 2006 Spring Meeting, Nice, France, 29.05.-02.06.2006
    • R. Dargis, A. Fissel, M. Czernohorsky, H.-J. Osten (2006): Epitaxie von Gadoliniumoxid auf SiliziumcarbidDeutscher MBE Workshop, Hamburg, Germany, 26.-27.09.2006
    • A. Fissel, O. Kirfel, Z. Elassar, E. Bugiel, M. Czernohorsky, H. J. Osten (2005): Interface formation during epitaxial growth of Neodymium Oxide on Si(001)207th Electrochemical Society Meeting, Quebec (Canada), 15.-20.05.2005
    • E. Bugiel, H.J. Osten, A. Fissel, O. Kirfel, M. Czernohorsky (2005): TEM investigations of Epitaxial High-k Dielectrics on SiliconMicroscopy of Semiconductor Materials (MSM) XIV Conference, Oxford (UK), 11.-14.04.2005
    • H.-J. Osten (2005): Interface formation during epitaxial growth of binary metal oxide on siliconNATO workshop Defects in High-K Materials, St. Petersburg, Russia, 11.-14.07.2005
    • H.-J. Osten (invited) (2005): MBE of rare earth oxidesEuropean Science Foundation, Exploratory Workshop, San Remo, Italy, 11.-13.05.2005
    • H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J. Efavi, M. Schmidt, T. Wahlbrik, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.J. Osten, O. Kirfel, A. Fissel (2005): Crystalline Gd2O3 High-k Gate Dielectrics with TiN Capped Fully Silicided (FUSI) NiSi Electrodes36th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington (USA), 01.-03.12.2005
    • M. Czernohorsky, O. Kirfel, Z. Elassar, E. Bugiel, A. Fissel, H.-J. Osten (2005): MBE Growth and Interface Formation of Neodymium Oxide on Silicon13th Euro-Konferenz Molecular Beam Epitaxy, Grindelwald, Switzerland, 07.-09.03.2005
    • M. F. Beug, R. Ferretti, K. R. Hofmann (2005): Polarity dependent generation of gate-side and substrate-side border traps in nitrided gate oxidesInsulating Films on Semiconductors, INFOS 2005, Leuven, Belgium, 22.-24.06.2005
    • O. Kerker, J. Zachariae, F. Mirza, R. Ferretti, K. R. Hofmann (2005): Investigation of Electrical and Optical Properties of BaxSr1-xO Gate Oxide MIS StructuresDPG-Frühjahrstagung, Berlin, Germany, 04.-09.03.2005
    • H.-J. Osten, E. Bugiel, A. Fissel, O. Kirfel (invited) (2004): Epitaxial Silicon/Metal Oxide Stacks for various applications11th Advanced Heterostructure Workshop, Hawaii, USA, 05.-10.12.2004
    • A. Fissel, H.-J. Osten, and E. Bugiel (invited) (2003): Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to Praseodymium OxidePhysics and Chemistry of Semiconductor Interfaces, Salt Lake City, Utah, USA, 19.-23.01.2003
    • F. Beug, R. Ferretti, K. R. Hofmann (2003): Detailed investigation of the transient local tunneling in gate oxides2003 IEEE International Reliability Physics Symposium, Dallas, Texas, USA, 30.03.-04.04.2003
    • H.-J. Osten, A. Bugiel, A. Fissel (invited) (2003): Understanding epitaxial growth of alternative high-K dielectrics on Si(001)ESF Workshop, Zürich, Switzerland, 17.-18.03.2003
    • H.-J. Osten, A. Fissel (invited) (2003): Epitaxial High-K Materials12th EURO-MBE 2002, Bad Hofgastein, Austria, 16.-19.02.2003
    • H.-J. Osten, E. Bugiel, A. Fissel (2002): Epitaxial Praseodymium Oxide: A New High-K Dielectric9th International Workshop on Oxide Electronics (WOE), St. Peter Beach, Florida, Oct. 2002
    • H.-J. Osten, E. Bugiel, A. Fissel (invited) (2002): Epitaxial Praseodymium Oxide: A New High-K DielectricMaterial Research Society, Fall Meeting, Symp. M, Boston, 02.-05.12.2002
    • U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland. G. Tzschöckel, H.-J. Osten, A. Fissel, H. J. Müssig (invited) (2002): Process Integration of Crystalline Pr2O3 High-K Gate Dielectrics32th European Solid-State Device Research Conference (ESSDERC 2002), Firenze, Italy, 24.-26.09.2002
  • Ongoing Projects

    »Category – Research«

    • Nanowire Field Effect Transistor with epitaxial Gd2O3 as wraparound gate oxide
      In this project, which is being carried out together with colleagues from the Indian Institute of Technology Bombay (https://www.iitb.ac.in/), the aim is to use functional epitaxial oxides for the production of Gate All Around (GAA) transistors. Nanowires of gallium nitride, which have extremely high charge carrier mobilities, are to be used as channel material. Within the framework of this project, the MBE will carry out the epitaxial growth of the oxide layers, while the IITB partners will manufacture the nanowires and electrically characterise the structures.
      Led by: Prof. H. Jörg Osten
      Year: 2020
      Funding: DAAD
      Duration: 2020 - 2023