Leveraging Semiconductor Technology Expertise to Enhance the Efficiency of Solar Cells
The development of silicon solar cells is characterized by two main objectives: lowering production cost and steadily increasing cell efficiency. By achieving these goals, the aim is to reduce the overall cost per watt peak, making photovoltaics (PV) an even more competitive, cost-efficient choice compared to alternative energy sources.
In line with this mission, MBE's scientific objective is to apply our extensive knowledge from the field of microelectronics to advance the development of highly efficient solar cells.
Our institute has consistently and effectively pursued this approach for numerous years, most notably through our close collaboration with the Institute for Solar Energy Research Hamelin (ISFH). In partnership with various project stakeholders, we have assessed and integrated numerous microelectronics techniques and technologies into the realm of solar cells.
One noteworthy example of successful technology transfer is the adoption of ion implantation as an alternative to the conventional diffusion method for creating doped regions in solar cells. Through the support of the BMU/BMWi-funded project CHIP (Cost-efficient High-throughput Ion-Implantation for Photovoltaic), we were able to acquire a state-of-the-art ion implanter within the clean room facilities of the Laboratory for Nano- und Quantenengineering (LNQE).
Another instance involves the utilization of what's known as a polysilicon emitter, a technique previously used in bipolar transistors, as a passivating contact in solar cells. The combination of the silicon process line at LNQE and ISFH's technological expertise resulted in the establishment of a new world record for solar cell efficiency. For instance, in the collaborative endeavor called 26+ (exploring pathways for the industrial realization of silicon solar cells with efficiencies surpassing 26%), we successfully produced a p-type silicon solar cell achieving an impressive efficiency of 26.1%. This achievement currently stands as the world record for silicon solar cells using p-type substrates.
At present, we are working on studying the transient behavior of solar cells when exposed to changing shading conditions. This investigation is especially significant in the context of delivery vehicles, and more broadly, the integration of solar cells into automobiles. These research efforts are conducted as part of the Street project, which is dedicated to deploying highly efficient solar cells in electrically powered commercial vehicles.
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Publications
Journal
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(2024): Solar Cells on Multicrystalline Silicon Thin Films Converted from Low-Cost Soda-Lime Glass, Advanced Materials Interfaces (2024) 2400170
DOI: 10.1002/admi.202400170 -
(2024): Assessment of the Required Maximum Power Point Tracking Speed for Vehicle Integrated Photovoltaics Based on Transient Irradiation Measurements and Dynamic Electrical Modelling, Solar RRL 8 (2024) 2300795
DOI: 10.1002/solr.202300795 -
(2024): Bessel-beam direct-write of the etch-mask in a nano-film of alumina for high-efficiency Si solar cells, Advanced Engineering Materials (2024) 2400711
DOI: 10.1002/adem.202400711 -
(2022): High time resolution measurement of solar irradiance onto driving car body for vehicle integrated photovoltaics, Progress in Photovoltaics 30 (2022) 543
DOI: 10.1002/pip.3526 -
(2022): Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts, ACS Applied Materials & Interfaces 14 (2022) 17975
DOI: 10.1021/acsami.2c01801 -
(2022): Towards 28 %-efficient Si single-junction solar cells with better passivating POLO junctions and photonic crystals, Solar Energy Materials and Solar Cells 111560 (2022)
DOI: 10.1016/j.solmat.2021.111560 -
(2022): Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells, accepted in Solar RRL 2200578 (2022)
DOI: 10.1002/solr.202200578 -
(2022): Impurity Gettering in Polycrystalline-Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes, Advanced Energy Materials 2103773 (2022)
DOI: 10.1002/aenm.202103773 -
(2021): 716 mV Open-Circuit Voltage with Fully Screen-Printed p-Type Back Junction Solar Cells Featuring an Aluminum Front Grid and a Passivating Polysilicon on Oxide Contact at the Rear Side, Solar RRL 5 (2021) 2000703
DOI: 10.1002/solr.202000703 -
(2021): Firing stability of tube furnace-annealed n-type poly-Si on oxide junctions, accepted in Progress in Photovoltaics (2021)
DOI: 10.1002/pip.3459 -
(2021): Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells, Scientific Reports 11 (2021) 996
DOI: 10.1038/s41598-020-79591-6 -
(2021): Fully screen-printed silicon solar cells with local Al-p+ and n-type POLO interdigitated back contacts with a VOC of 716 mV and an efficiency of 23%, Progress in Photovoltaics: Research and Applications 29 (2021) 516
DOI: 10.1002/pip.3399 -
(2021): Photonic crystals for highly efficient silicon single junction solar cells, Solar Energy Materials and Solar Cells 233 (2021) 111337
DOI: 10.1016/j.solmat.2021.111337 -
(2021): Contacting a single nanometer‐sized pinhole in the interfacial oxide of a poly‐silicon on oxide (POLO) solar cell junction, accepted in Progress in Photovoltaics Research and Applications 2021
DOI: 10.1002/pip.3417 -
(2021): Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability Semiconductor Science and Technology 36(11) (2021) 115016, Semiconductor Science and Technology 36(11) (2021) 115016
DOI: 10.1088/1361-6641/ac2962 -
(2021): Demonstration of feeding VIPV‐converted energy into the high‐voltage on‐board network of practical light commercial vehicles for range extension, Solar RRL (2021) 2100516
DOI: 10.1002/solr.202100516 -
(2021): Role of oxygen in the UV-ps laser triggered amorphization of poly-Si for Si solar cells with local passivated contacts, Journal of Applied Physics 129 (2021) 133103
DOI: 10.1063/5.0045829 -
(2020): A 22.3% Efficient p-Type Back Junction Solar Cell with an Al-Printed Front-Side Grid and a Passivating n+-Type Polysilicon on Oxide Contact at the Rear Side, Solar RRL 4 (2020) 2000435
DOI: 10.1002/solr.202000435 -
(2020): Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell, Scientific Reports 10 (2020) 658
DOI: 10.1038/s41598-019-57310-0 -
(2020): A Taxonomy for Three-Terminal Tandem Solar Cells, ACS Energy LEtters 5 (2020) 1233
DOI: 10.1021/acsenergylett.0c00068 -
(2020): The 2020 photovoltaic technologies roadmap, Journal of Physics D Applied Physics 53 (2020) 493001
DOI: 10.1088/1361-6463/ab9c6a -
(2020): Nanostructured Front Electrodes for Perovskite/c-Si Tandem Photovoltaics, Optics Express 28 (2020) 8878
DOI: 10.1364/OE.382253 -
(2020): Degradation and Regeneration of n+-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing, IEEE Journal of Photovoltaics 10-2 (2020) 423
DOI: 10.1109/JPHOTOV.2020.2964987 -
(2020): Degradation and Regeneration of n+-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing, IEEE Journal of Photovoltaics 10 (2020) 423
DOI: 10.1109/JPHOTOV.2020.2964987 -
(2020): Modeling recombination and contact resistance of poly‐Si junctions, Progress in Photovoltaics: Research and Applications 2020
DOI: 10.1002/pip.3327 -
(2020): 2D/3D Heterostructure for Semitransparent Perovskite Solar Cells with Engineered Bandgap Enables Efficiencies Exceeding 25% in Four‐Terminal Tandems with Silicon and CIGS, Advanced Functional Materials 30 (2020) 1909919
DOI: 10.1002/adfm.201909919 -
(2020): Evolutionary PERC+ solar cell efficiency projection towards 24% evaluating shadow-mask-deposited poly-Si fingers below the Ag front contact as next improvement step, Solar Energy Materials and Solar Cells 212 (2020) 110586
DOI: 10.1016/j.solmat.2020.110586 -
(2020): Ultra‐Thin Poly‐Si Layers: Passivation Quality, Utilization of Charge Carriers Generated in the Poly‐Si and Application on Screen‐Printed Double‐Side Contacted POLO‐Cells, Solar RRL 4 (2020) 2000177
DOI: 10.1002/solr.202000177 -
(2019): 26.1 %-efficient POLO-IBC cells: Quantification of further efficiency improvements, Progress in Photovoltaics: Research and Applications 27 (2019) 950
DOI: 10.1002/pip.3098 -
(2019): Simulation of solar cell performance based on in the field measured ambience parameters, AIP Conference Proceedings 2147 (2019) 020020
DOI: 10.1063/1.5123825 -
(2019): Back‐contacted bottom cells with three terminals: Maximizing power extraction from current‐mismatched tandem cells, Progress in Photovoltaics: Research and Applications (2019) 1
DOI: 10.1002/pip.3107 -
(2019): For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?, Progress in Photovoltaics Research and Applications 28 (2019) 503
DOI: 10.1002/pip.3201 -
(2019): Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on- Si(111), grown by molecular beam epitaxy, Proc. SPIE 10914, Optical Components and Materials XVI, 1091417
DOI: 10.1117/12.2509720 -
(2019): 26%-efficient and 2cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges, Solar Energy Materials & Solar Cells 200 (2019) 110021
DOI: 10.1016/j.solmat.2019.110021 -
(2018): Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells, Solar Energy Materials & Solar Cells 186 (2018) 184
DOI: 10.1016/j.solmat.2018.06.020 -
(2018): Perimeter Recombination of 25 %-Efficient IBC Solar Cells With Passivating POLO Contacts for Both Polarities, IEEE Journal of Photovoltaics 8 (2018) 23
DOI: 10.1109/JPHOTOV.2017.2762592 -
(2018): Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells, IEEE Journal of Photovoltaics 8 (2018) 79
DOI: 10.1109/JPHOTOV.2017.2775159 -
(2018): Building blocks for industrial, screen-printed double-side contacted POLO cells with highly transparent ZnO:Al layers, IEEE Journal of Photovoltaics 8 (2018) 719
DOI: 10.1109/JPHOTOV.2018.2813427 -
(2018): High temperature annealing of ZnO:Al on passivating POLO junctions: Impact on transparency, conductivity, junction passivation and interface stability, IEEE Journal of Photovoltaics 9 (2018) 89
DOI: 10.1109/JPHOTOV.2018.2878337 -
(2017): Fundamental Consideration about Junction Formation Strategies for Phosphorus-doped Emitters with J0e < 10 fA/cm², Energy Procedia 124 (2017) 126
DOI: 10.1016/j.egypro.2017.09.323 -
(2017): A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells, Solar Energy Materials & Solar Cells 173 (2017) 106
DOI: 10.1016/j.solmat.2017.05.041 -
(2017): Introducing Pinhole Magnification by Selective Etching: Application to Poly-Si on Ultra-Thin Silicon Oxide Films, Energy Procedia 124 (2017) 435
DOI: 10.1016/j.egypro.2017.09.270 -
(2017): Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities, Japanese Journal of Applied Physics 56 (2017) 08MB15
DOI: 10.7567/JJAP.56.08MB15 -
(2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, Solar Energy Materials & Solar Cells 173 (2017) 85
DOI: 10.1016/j.solmat.2017.05.055 -
(2017): Junction Resistivity of Carrier-Selective Polysilicon on Oxide junctions and Its Impact on Solar Cell Performance, IEEE Journal of Photovoltaics 7 (2017) 11
DOI: 10.1109/JPHOTOV.2016.2614123 -
(2017): Silicon nanopowder as diffuse rear reflector for silicon solar cells, Journal of Applied Physics 122 (2017) 053102
DOI: 10.1063/1.4997183 -
(2017): Pinhole Density and Contact Resistivity of Carrier Selective Junctions with Polycrystalline Silicon on Oxide, Applied Physics Letters 110 (2017) 253902
DOI: 10.1063/1.4986924 -
(2017): On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces, Physica Status Solidi A: Applications and Materials Science 217 (2017) 1700058
DOI: 10.1002/pssa.201700058 -
(2016): Structural investigation of printed Ag/Al contacts on silicon and numerical modeling of their contact recombination, IEEE Journal of Photovoltaics 6 (2016) 1175
DOI: 10.1109/JPHOTOV.2016.2591318 -
(2016): Bifacial, Fully Screen-Printed n-PERT Solar Cells With BF2 and B Implanted Emitters, Solar Energy Materials & Solar Cells 157 (2016) 326
DOI: 10.1016/j.solmat.2016.05.028 -
(2016): Contact Selectivity and Efficiency in Crystalline Silicon Photovoltaics, IEEE Journal of Photovoltaics 6 (2016) 1413
DOI: 10.1109/JPHOTOV.2016.2598267 -
(2016): Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?, Solar Energy Materials & Solar Cells 158 (2016) 60
DOI: 10.1016/j.solmat.2016.05.045 -
(2016): Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions, Energy Procedia 92 (2016) 199
DOI: 10.1016/j.egypro.2016.07.057 -
(2015): Hierarchical Etching for Improved Optical Front-side Properties of Monocrystalline Si Solar Cells, Energy Procedia 77 (2015) 810
DOI: 10.1016/j.egypro.2015.07.114 -
(2015): Ion implantation of boric molecules for silicon solar cells, Solar Energy Materials & Solar Cells 142 (2015) 12
DOI: 10.1016/j.solmat.2015.05.024 -
(2015): Electrical and Structural Analysis of Crystal Defects after High-Temperature Rapid Thermal Annealing of highly Boron Ion-Implanted Emitters, IEEE Journal of Photovoltaics 5 (2015) 166
DOI: 10.1109/JPHOTOV.2014.2365468 -
(2015): Basic study on the influence of glass composition and aluminum content on the Ag/Al paste contact formation to boron emitters, Energy Procedia 67 (2015) 20
DOI: 10.1016/j.egypro.2015.03.284 -
(2015): Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells, IEEE Journal of Photovoltaics 5 (2015) 507
DOI: 10.1109/JPHOTOV.2014.2382975 -
(2014): Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells, physica status solidi A 212 (2014) 291
DOI: 10.1002/pssa.201431118 -
(2014): Structural analysis of textured silicon surfaces after ion implantation under tilted angle, Semiconductor Science and Technology 29 (2014) 095004
DOI: 10.1088/0268-1242/29/9/095004 -
(2014): A Simple Model Describing the Symmetric I-V Characteristics of p Polycrystalline/n Monocrystalline Si, and n Polycrystalline Si/p Monocrystalline Si Junctions, IEEE Journal of Photovoltaics 4 (2014) 841
DOI: 10.1109/JPHOTOV.2014.2310740 -
(2014): Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions, Solar Energy Materials and Solar Cells 131 (2014) 85
DOI: 10.1016/j.solmat.2014.06.003 -
(2013): Role of domain walls in the abnormal photovoltaic effect in BiFeO3, Nature Communications 4 (2013) 2835
DOI: 10.1038/ncomms3835 -
(2013): Weak Light Performance of PERC, PERT and Standard Industrial Solar Cells, Energy Procedia 38 (2013) 108
DOI: 10.1016/j.egypro.2013.07.256 -
(2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (2008) 148
DOI: 10.1109/COMMAD.2008.4802118
Konferenzbeitrag
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(2024): Nickel oxidized by firing on poly-Si as recombination layer & hole-selective contact in perovskite/silicon tandem solar cells, 14th International Conference on Crystalline Silicon Photovoltaics (SiliconPV), Chambery, France, 15. - 19.04.2024
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(2024): Perovskite and silicon - also a good match without inter-poisoning?, tandemPV International Workshop, Amsterdam, Netherlands, 25. - 27.06.2024
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(2023): Vehicle-Integrated Photovoltaics: Challenges on Electronics for Maximum Power Output, The Eighth International Workshop on Power Supply on Chip (PwrSoC), Hannover, Germany, 27. - 29.09.2023
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(2023): Optimisation of Photolithographic Fabrication of Photonic Crystals on Rough Wafers for High Efficiency Solar Cells, 13th International Conference on Crystalline Silicon Photovoltaics (13th SiliconPV), Delft, The Netherlands, 11. - 14.04.2023
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(2023): Integration of photonic crystals in highly efficient POLO²-IBC cells – interplay between structural, optical and electrical properties, 13th International Conference on Crystalline Silicon Photovoltaics (13th SiliconPV), Delft, The Netherlands, 11. - 14.04.2023
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(2022): Assessment of required MPPT speed based on measured transient irradiance and dynamic electrical modelling for VIPV applications, 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), Nagoya, Japan, 13.-17.11.2022
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(2022): Photolithographic fabrication of photonic crystals on monocrystalline silicon, LNQE Nanoday 2022, Hannover, Germany, 22.09.2022
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(2021): Transient Electrical Characteristics of Hetero Junction Solar Cells under Fast Transient Illumination, 11th International Conference on Crystalline Silicon Photovoltaics (11th SiliconPV), online event, 19. - 23.04.2021
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(2021): From basic studies of transient shading effects to test drives with a PV-equipped light commercial vehicle, 38th European Photovoltaic Solar Energy Conference and Exhibition (38th EUPVSEC), online event, 06. - 10.09.2021
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(2021): Towards 28 % Efficient Si Single Junction Solar Cells with Photonic Crystals, 11th International Conference on Crystalline Silicon Photovoltaics (11th SiliconPV), online event, 19. - 23.04.2021
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(2021): Rear side dielectrics on interdigitating p + -(i)-n + back-contact solar cells - hydrogenation vs. charge effects, 38th European Photovoltaic Solar Energy Conference and Exhibition (38th EUPVSEC), online event, 26. 30.09.2021
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(2021): Demonstration of feeding VIPV converted energy into the high voltage on board network of practical light commercial vehicles for range extension, 38th European Photovoltaic Solar Energy Conference and Exhibition (38th EUPVSEC), online event, 06. - 10.09.2021
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(2020): For VIPV applications: Investigation of transient shading with high time resolution under different environmental conditions, 30th Photovoltaic Science and Engineering Conference (PVSEC-30), Jeju, South Korea, 08.-13.11.2020
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(2020): Optimization of Doping Profiles in IBC pin Layout using Poly-Si-based Passivating Contacts, 30th Photovoltaic Science and Engineering Conference (PVSEC-30), Jeju, South Korea, 08.-13.11.2020
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(2019): Thermodynamics and kinetics of nanocluster formation on semiconductor surfaces, 21st International Conference on Materials, Methods and Technologies, Burgas, Bulgaria, 01.-05.07.2019.
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(2019): Transferring the record p-type Si POLO-IBC cell technology towards an industrial level, 46th Photovoltaic Specialists Conference (46th IEEE PVSC), Chicago, USA, 16. - 22.06.2019
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(2019): Simulation of solar cell performance based on in the field measured ambience parameters, 9th International Conference on Silicon Photovoltaics (9th SiliconPV), Leuven, Belgium, 08. - 10.04.2019
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(2019): Dopant diffusion through pinholes and continuous oxide layers in n-type polysilicon on oxide (POLO) passivating contacts, 29th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
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(2019): Surface passivation of in situ doped n-type polysilicon on oxide (POLO) layers for silicon solar cells, 29th Photovoltaic Science and Engineering Conference (PVSEC-29), Xi'an, China, 04.-08.11.2019
DOI: 10.13140/RG.2.2.23832.75529 -
(2019): 26%-Efficient and 2 cm Narrow Interdigitated Back Contact Silicon Solar Cells with Passivated Slits on Two Edges, 9th International Conference on Silicon Photovoltaics (9th SiliconPV), Leuven, Belgium, 08.-10.04.2019
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(2018): Intrinsic poly-crystalline silicon region in between the p+ and n+ POLO contacts of an 26.1%-efficient IBC solar cell, 35th European PV Solar Energy Conference and Exhibition (35th EU PVSEC), Brussels, Belgium, 24.-28.09.2018
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(2018): Laser Contact Openings for Local Poly-Si-Metal Contacts, 8th International Conference on Silicon Photovoltaics (8th SiliconPV), Lausanne, Switzerland, 19.-21.03.2018
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(2018): The way towards high efficiency silicon-based solar cells, IEEE Bombay Section, Indian Institute of Technolgoy Bombay, Mumbai, Indien, 8. November 2018
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(2018): Ion implantation for photovoltaic applications: Review and outlook for silicon solar cells, 12th Ion Implantation and other Applications of Ions and Electrons 2018 (ION2018), Kazimierz Dolny, Poland, 18.-21.06.2018
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(2018): Ion implantation of As, B, P, BF and BF2 on planar and alkaline-textured Si(001) surfaces for photovoltaic applications, 22nd International Conference on Ion Implantation Technology (IIT), Würzburg, Germany, 16.-21.09.2018
DOI: 10.1109/IIT.2018.8807962 -
(2018): In-depth Study of poly-Si/Oxide/c-Si Junctions and p+ poly-Si/n+ Poly-Si Tunneling Junctions for Applications in Si Single Junction and Si-Based Tandem Cells, MRS Fall Metting 2018, Boston, USA, 25.-30.11.2018
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(2018): Formation of a Resistive SiOx Layer at the Interface of Poly-Si to Aluminum-Doped Zinc Oxide, 8th International Conference on Silicon Photovoltaics (8th SiliconPV), Lausanne, Switzerland, 19.-21.03.2018
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(2017): A Simple Method for Pinhole Detection in Carrier Selective POLO-Junctions for High Efficiency Silicon Solar Cells, 7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
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(2017): Junction Unchained - Pinhole Detection in Carrier-Selective POLO-Junctions, LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
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(2017): Introducing Pinhole Magnification by Selective Etching: Application to Poly-Si on Ultra-Thin Silicon Oxide Films, 7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
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(2017): Tetramethylammoniumhydroxide - Pinhole Magnification by Selective Etching, LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
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(2017): Perimeter recombination of 25 %-efficient IBC solar cells with passivating POLO contacts for both polarities, 44th Photovoltaic Specialists Conference (44th IEEE PVSC), Washington, D.C., USA, 22.-30.06.2017
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(2017): Toward Effective Gettering in Boron-Implanted Silicon Solar Cells, 44th Photovoltaic Specialists Conference (44th IEEE PVSC), Washington, D.C., USA, 22.-30.06.2017
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(2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, LNQE Nanoday 2017, Hannover, Germany, 28.09.2017
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(2017): Improvement of the SRH Bulk Lifetime upon Formation of n-Type POLO Junctions for 25% Efficient Si Solar Cells, 7th International Conference on Silicon Photovoltaics (7th SiliconPV), Freiburg, Germany, 03.-05.04.2017
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(2017): Building blocks for industrial, screen-printed two sides-contacted POLO cells with highly transparent ZnO:Al layers, 33rd European PV Solar Energy Conference and Exhibition (33rd EU PVSEC), Amsterdam, The Netherlands, 25.-29.09.2017
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(2017): IBC solar cells with passivating POLO contacts for both polarities – revisiting optical losses, 8th workshop on back contact solar cell and module technology, Freiburg, Germany, 21.-22.11.2017
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(2016): Status of the EU FP7 HERCULES Project: What Is the Potential of n-Type Silicon Solar Cells in Europe?, 32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
DOI: 10.4229/EUPVSEC20162016-2BO.3.6 -
(2016): Evolution of Oxide Disruptions: The (W)hole Story About Passivating Contacts, 43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
DOI: 10.1109/PVSC.2016.7749582 -
(2016): Finding Pinholes in Carrier Selective Polycrystalline Si / Crystalline Si Contacts, 16th European Microscopy Conference, Lyon, france, 28.08.-02.09.2016
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(2016): IBC solar cells with polycrystalline on oxide (POLO) passivating contacts for both polarities, 26th International Photovoltaic Science and Engineering Conference (PVSEC-26), Singapore, 24.-28.10.2016
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(2016): Flip-Flop Cell Interconnection Enabled by an Extremely High Bifaciality of Screen-Printed Ion Implanted N-PERT Si Solar Cells, 32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
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(2016): Ion implantation for photovoltaic applications: Review and outlook for n-type silicon solar cells, 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
DOI: 10.1109/IIT.2016.7882886 -
(2016): Comparison of experimental emitter saturation current densities and simulated defect densities of boron-implanted emitters, 21st International Conference on Ion Implantation Technology (IIT), Tainan, Taiwan, 26.-30.09.2016
DOI: 10.1109/IIT.2016.7882856 -
(2016): Dopant diffusion from p+-poly-Si into c-Si during thermal annealing, 43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
DOI: 10.1109/PVSC.2016.7750083 -
(2016): Low pressure chemical vapour deposition for in situ doped n+ POLO junctions in industrial silicon solar cells, 26th International Photovoltaic Science and Engineering Conference (PVSEC-26), Singapore, 24.-28.10.2016
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(2016): Recombination behavior of photolithography-free back junction back contact solar cells with carrier-selective polysilicon on oxide junctions for both polarities, 6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
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(2016): Junction Resistivity of Carrier-Selective Polycrystalline / Crystalline Silicon Junctions and Its Impact on the Solar Cell Performance, 43rd Photovoltaic Specialists Conference (43rd IEEE PVSC), Portland, OR, USA, 05.-10.06.2016
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(2016): A Quantitative Measure for the Carrier Selectivity of Contacts to Solar Cells, 32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
DOI: 10.4229/EUPVSEC20162016-2CO.4.1 -
(2016): Working Principle of Carrier Selective Poly-Si/c-Si Junctions: Is Tunneling the Whole Story?, 6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
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(2016): Implementation of n+ and p+ poly-Si/c-Si junctions on front and rear side of double-side contacted industrial silicon solar cells, 32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
DOI: 10.4229/EUPVSEC20162016-2BO.3.2 -
(2016): Parasitic Absorption In Polycrystalline Si-Layers For Carrier-Selective Front Junctions, 6th International Conference on Silicon Photovoltaics (6th SiliconPV), Chambéry, France, 07.-09.03.2016
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(2016): Optimization of p+ poly-Si / c-Si junctions on wet-chemically grown interfacial oxides and on different wafer morphologies, 32nd European PV Solar Energy Conference and Exhibition (32nd EU PVSEC), Munich, Germany, 20.-24.06.2016
DOI: 10.4229/EUPVSEC20162016-2CO.4.3 -
(2015): Towards ultra-high efficient photovoltaics with perovskite/crystalline silicon tandem devices, 31st European PV Solar Energy Conference and Exhibition (31st EU PVSEC), Hamburg, Germany, 14.-18.09.2015
DOI: 10.4229/EUPVSEC20152015-1AP.1.3 -
(2015): Glass phase alignment in front side pastes for P- and N-type solar cells, Semiconductor Technology International Conference (CSTIC), Shanghai, China, 15.-16.03.2015
DOI: 10.1109/CSTIC.2015.7153489 -
(2015): Breakdown of the Efficiency Gap to 29% Based on Experimental Input Data and Modelling, 31st European PV Solar Energy Conference and Exhibition (31st EU PVSEC), Hamburg, Germany, 14.-18.09.2015
DOI: 10.4229/EUPVSEC20152015-2BP.1.2 -
(2015): The PERC+ Cell: a 21%-Efficient Industrial Bifacial PERC Solar Cell, 31st European PV Solar Energy Conference and Exhibition (31st EU PVSEC), Hamburg, Germany, 14.-18.09.2015
DOI: 10.4229/EUPVSEC20152015-2BO.4.3 -
(2014): High Efficient Fully Ion-Implanted, Co-Annealed and Laser-Structured Back Junction Back Contacted Solar Cells, 29th European PV Solar Energy Conference and Exhibition (29th EU PVSEC), Amsterdam, Netherlands, 22.-26.09.2014
DOI: 10.4229/EUPVSEC20142014-2AV.2.61 -
(2014): Emitter Recombination Current Densities of Boron Emitters with Silver/Aluminum Pastes, 40th IEEE Photovoltaic Specialists Conference (PVSC-40), Denver, Colorado, 08.-13.06.2014
DOI: 10.1109/PVSC.2014.6925514 -
(2014): Structural investigations of textured silicon after ion implantation, 52. Treffen der Nutzergruppe Ionenimplantation, Dresden, Germany, 13.11.2014
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(2014): Structural Investigation of Ion Implantation of Boron on Random Pyramid Textured Si(100) for Photovoltaic Applications, 20th International Conference on Ion Implantation Technology (IIT), Portland, Oregon, USA, 26.06.-04.07.2014
DOI: 10.1109/IIT.2014.6940060 -
(2014): Ion implantation of elemental boron and boric molecules for silicon solar cells, LNQE Nanoday 2014, Hannover, Germany, 01.10.2014
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(2014): Optical Emission Characteristics of Compressively Strained Ge Films, Photonics 2014: 12th International Conference on Fiber Optics and Photonics, Kharagpur, India, 13.-16.12.2014
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(2014): Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions, 40th IEEE Photovoltaic Specialist Conference (PVSC), Denver, Colorado, USA, 08.-13.06.2014
DOI: 10.1109/PVSC.2014.6925049 -
(2014): Basic Study on the Influence of Glass Composition and Aluminum Content on the Ag/Al Paste Contact Formation to Boron Emitters, 5th Workshop on Metallization for Crystalline Silicon Solar Cells, Constance, Germany, 20.-21.10.2014
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(2014): Unified View on the Recombination-Induced Short-Circuit Current Losses in Solar Cells with High-Low Junctions, 29th European PV Solar Energy Conference and Exhibition (29th EU PVSEC), Amsterdam, Netherlands, 22.-26.09.2014
DOI: 10.4229/EUPVSEC20142014-2BV.8.27 -
(2014): Ion-implanted Poly-Si / c-Si Junctions as a Back-surface Field in Back-Junction Back-Contacted Solar Cells, 29th European PV Solar Energy Conference and Exhibition (29th EU PVSEC), Amsterdam, Netherlands, 22.-26.09.2014
DOI: 10.4229/EUPVSEC20142014-2AV.3.61 -
(2014): Industrial ion implanted, co-annealed and fully screen-printed bifacial n-PERT solar cells with low-doped back-surface fields, 4th nPV workshop, 's-Hertogenbosch, Netherlands, 27.-28.03.2014
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(2013): Analysis of RISE-IBC Solar Cells, 28th European PV Solar Energy Conference and Exhibition (28th EU PVSEC), Paris, France, 30.09.-04.10.2013
DOI: 10.4229/28thEUPVSEC2013-2CV.3.48 -
(2013): Analyzing the recombination current densities in industrial like n-type PERT solar cells exceeding 20% efficiency, Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013
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(2013): Correlation of dislocation line densities and emitter saturation current densities of ion implanted boron emitters, Photovoltaic Science and Engineering Conference (PVSEC-23), Taipeh, Taiwan, 28.10.-01.11.2013
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(2013): Weak Light Performance of PERC, PERT and Standard Industrial Solar Cells, 3rd SiliconPV, Hamelin, Germany, 24.-27.03.2013
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(2013): Recent Progress and Options for Future Crystalline Silicon Solar Cells, 28th European PV Solar Energy Conference and Exhibition (28th EU PVSEC), Paris, France, 30.09.-04.10.2013
DOI: 10.4229/28thEUPVSEC2013-2BP.1.1 -
(2013): High-Efficiency RISE-IBC Solar Cells: Influence of Rear Side-Passivation on pn-Junction Meander Recombination, 28th European PV Solar Energy Conference and Exhibition (28th EU PVSEC), Paris, France, 30.09.-04.10.2013
DOI: 10.4229/28thEUPVSEC2013-2CO.4.1 -
(2012): High Fill-Factors of Back-Junction Solar Cells without Front Surface Field Diffusion, 27th European PV Solar Energy Conference and Exhibition (29th EU PVSEC), Frankfurt, Germany, 24.-29.09.2012
DOI: 10.4229/27thEUPVSEC2012-2DO.3.5 -
(2008): Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008, Sydney, Australia, 28.07.-01.08.2008
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(2007): Integration of Functional Epitaxial Oxides into Silicon: A TEM Investigation, Microscopy of Semiconducting Materials XV, Churchill College, Cambridge, UK, 02.-05. April 2007.
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(2006): Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics, 36th European Solid-State Device Research Conference, Montreux, Switzerland, 18.-22. September 2006.
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(2005): Manipulation der atomaren Anordnung mit Epitaxie – Ein Weg zur erweiterten Funktionalität von Halbleitermaterialien für nanoelektronische Anwendungen, Kolloquiumsvortrag, Laboratorium für Nano- und Quantenengineering (LNQE), Hannover, 26.10.2005.
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(2004): Fabrication of Resonant-Tunneling Diodes by B Surfactant-Enhanced Growth of Si Quantum Well Layers on CaF2/Si, 4th IEEE Conference on Nanotechnology, Munich, Germany, 17.-19.08.2004
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Ongoing Projects
(Kopie 2)
»Category – Research«
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Understanding and engineering polysilicon based passivating contacts for photovoltaic applicationsIn this project, which is being carried out jointly with colleagues from the Australia National University in Canberra (https://www.anu.edu.au/), the aim is to investigate passivating contacts based on polycrystalline silicon. Such contact structures consist of a thin silicon oxide that is produced either chemically or dry thermally on a silicon wafer. A thin layer of polycrystalline silicon is deposited on this oxide. Understanding the function and high-quality production of such contact structures have been the subject of research at MBE for many years. Within the framework of this project, the long-term stability and the ability of the polycrystalline silicon to bind metallic impurities or to deactivate them electrically are to be investigated.Led by: Dr.-Ing. Jan KrügenerYear: 2023Funding: DAADDuration: 2023 - 2024
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Preparation and characterization of photonic structures for use in future silicon solar cellsModern silicon solar cells today achieve record efficiencies of up to 26.8 %. The main limitations compared to the theoretical limit for silicon solar cells of approx. 29.5 % are the intrinsic recombination losses in the silicon volume and the recombination on surfaces and contacts. The latter have been drastically reduced in recent years through the introduction of very effective selective contact layers. A reduction in the unavoidable intrinsic volume recombination can only be achieved by using thinner silicon wafers, but this has a direct negative impact on the achievable photocurrent density and therefore on the efficiency of the solar cell, as the volume of the silicon absorber available for photoabsorption is also reduced when its thickness is reduced. For some years now, structures based on photonic crystals have been investigated that make it possible to achieve high photocurrent densities even with thinner silicon wafers. As has been shown theoretically, photonic crystals on the front side of silicon solar cells allow increased absorption of the incident light and thus enable significantly higher photocurrents and thus higher efficiencies than predicted by the classical theoretical limit. The photonic crystals investigated to date against this background consist of regularly arranged inverted pyramids with edge lengths of a few micrometres. The inverted pyramids are produced using selective, highly anisotropic wet chemical etching processes through a mask of silicon oxide. The first solar cells with photonic crystals on the front surfaces have already been produced on a laboratory scale in a co-operation between MBE and ISFH. However, these were still limited by local inhomogeneities in the manufacturing process of the regular inverted pyramids. As part of the project planned here, conditions are initially to be established that enable the defined production of large-area photonic crystals on silicon. Initial preliminary work has already been carried out at MBE for this purpose, based on structure transfer using conventional photolithography. The process developed in this way will then be systematically varied and the structures produced will subsequently be characterised optically (transmission, reflection) and structurally (scanning electron microscope, atomic force microscope). The results achieved in this way will be used to better estimate the realistically achievable efficiency potential of silicon solar cells with photonic crystals. In addition, new sub-processes are to be developed that can improve the production of photonic crystals. This includes, for example, replacing photolithography with laser lithography or the use of dry etching processes instead of the wet-chemical production used to date. In the future, the solar cells with photonic crystal structures produced as part of this project can also be used as bottom cells for tandem cells.Led by: Dr.-Ing. J. KrügenerYear: 2024Funding: Niedersächsisches Ministerium für Wissenschaft und KulturDuration: 2023 - 2027
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