Leibniz Universität Hannover Faculty Faculty of Electrical Engineering and Computer Science
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Institute of Electronic Materials and Devices
 
Institute of Electronic Materials and Devices Research Research Areas Crystalline Oxides on Silicon
Research Projects

Research Projects - Crystalline Oxides on Silicon

  • Nanowire Field Effect Transistor with epitaxial Gd2O3 as wraparound gate oxide
    In this project, which is being carried out together with colleagues from the Indian Institute of Technology Bombay (https://www.iitb.ac.in/), the aim is to use functional epitaxial oxides for the production of Gate All Around (GAA) transistors. Nanowires of gallium nitride, which have extremely high charge carrier mobilities, are to be used as channel material. Within the framework of this project, the MBE will carry out the epitaxial growth of the oxide layers, while the IITB partners will manufacture the nanowires and electrically characterise the structures.
    Led by: Prof. H. Jörg Osten
    Year: 2020
    Funding: DAAD
    Duration: 2020 - 2023

Last Change: 14.09.23 Print

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